Measurements of Neutron Induced Surface and Bulk Defects in 4H Silicon Carbide
Measurements of Neutron Induced Surface and Bulk Defects in 4H Silicon Carbide

Author: Kent T. Jones

Publisher:

Published: 2002

Total Pages: 109

ISBN-13: 9781423506737

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The effects of neutron irradiation was investigated in both n- and p- type 4H silicon carbide. Photoluminescence (PL), deep level transient spectroscopy (DLTS), and Hall effect measurements where used to observe optical and electrical characteristics and identify changes in basic material properties. The material was irradiated using an open pool research reactor. Highly doped n- and p-type materials (ND-NA Æ 1.2E17 and NA-ND Æ 1.5E18 cm-3 respectively) were chosen to aid in device fabrication. The material demonstrated no measurable effect to 1 MeV neutrons at fluences of up to 1E14 n/ cm2 and devices were unable to be constructed when exposed to fluences greater then 1E16 n/cm2. The effective suppression of the near bandgap zero phonon PL luminescence lines was shown as a function of increasing neutron fluence, and attributed to the dislocation of neutral nitrogen donors. Deep level defects sites also developed and where shown to increase in density with increased neutron fluence. Hall measurements generally agreed with theoretical expectations but failed to yield conclusive results. Capacitance rollover was observed near 510 K beginning with fluences of around 5E15 n/cm2. Irradiated devices also showed unexpectedly permanent degradation after hour-long exposure to temperatures exceeding 600K during DLTS measurements.

Low Temperature Hall Measurements of Neutron Irradiated Silicon Carbide
Low Temperature Hall Measurements of Neutron Irradiated Silicon Carbide

Author: Angelo M. Bonavita

Publisher:

Published: 2004-03-01

Total Pages: 82

ISBN-13: 9781423516354

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The purpose of this research was to search for evidence of low temperature annealing from neutron irradiated 4H-silicon carbide. No features suggesting annealing were found below a temperature of 340K. Temperature dependant Hall effect measurements were taken over a range of 100K to 340K recording resistivity, carrier densities, and mobility. Resistivity was noted to increase with irradiations, and carrier densities appeared to decrease, while mobility appeared minimally affected by neutron irradiation. This suggests the creation of active acceptor defects decreasing carrier concentrations. N-type samples measured were 5mm x 5mm square with Nickel contacts, and irradiated to 10(exp 10) and 10(exp 16) n-cm/cu cm of 1MeV equivalent neutron fluence. Suggestions for continuing research include using a probe station instead of wire connections to samples, use a large source current to minimize variance, and minimize cadmium shielding to reduce negative reactivity.

Silicon Carbide
Silicon Carbide

Author: Wolfgang J. Choyke

Publisher: Springer Science & Business Media

Published: 2013-04-17

Total Pages: 911

ISBN-13: 3642188702

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Since the 1997 publication of "Silicon Carbide - A Review of Fundamental Questions and Applications to Current Device Technology" edited by Choyke, et al., there has been impressive progress in both the fundamental and developmental aspects of the SiC field. So there is a growing need to update the scientific community on the important events in research and development since then. The editors have again gathered an outstanding team of the world's leading SiC researchers and design engineers to write on the most recent developments in SiC.

Properties and Applications of Silicon Carbide
Properties and Applications of Silicon Carbide

Author: Rosario Gerhardt

Publisher: BoD – Books on Demand

Published: 2011-04-04

Total Pages: 550

ISBN-13: 9533072016

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In this book, we explore an eclectic mix of articles that highlight some new potential applications of SiC and different ways to achieve specific properties. Some articles describe well-established processing methods, while others highlight phase equilibria or machining methods. A resurgence of interest in the structural arena is evident, while new ways to utilize the interesting electromagnetic properties of SiC continue to increase.

Physics and Technology of Silicon Carbide Devices
Physics and Technology of Silicon Carbide Devices

Author: George Gibbs

Publisher:

Published: 2016-10-01

Total Pages: 284

ISBN-13: 9781681176437

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Silicon (Si) is by far the most widely used semiconductor material for power devices. On the other hand, Si-based power devices are approaching their material limits, which has provoked a lot of efforts to find alternatives to Si-based power devices for better performance. With the rapid innovations and developments in the semiconductor industry, Silicon Carbide (SiC) power devices have progressed from immature prototypes in laboratories to a viable alternative to Si-based power devices in high-efficiency and high-power density applications. SiC devices have numerous persuasive advantages--high-breakdown voltage, high-operating electric field, high-operating temperature, high-switching frequency and low losses. Silicon Carbide (SiC) devices belong to the so-called wide band gap semiconductor group, which offers a number of attractive characteristics for high voltage power semiconductors when compared to commonly used silicon (Si). Recently, some SiC power devices, for example, Schottky-barrier diodes (SBDs), metal-oxide-semiconductor field-effecttransistors (MOSFETs), junction FETs (JFETs), and their integrated modules have come onto the market. Physics and Technology of Silicon Carbide Devices abundantly describes recent technologies on manufacturing, processing, characterization, modeling, etc. for SiC devices.