Materials Reliability in Microelectronics V: Volume 391
Materials Reliability in Microelectronics V: Volume 391

Author: Anthony S. Oates

Publisher:

Published: 1995-10-24

Total Pages: 552

ISBN-13:

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This long-standing proceedings series is highly regarded as a premier forum for the discussion of microelectronics reliability issues. In this fifth book, emphasis is on the fundamental understanding of failure phenomena in thin-film materials. Special attention is given to electromigration and mechanical stress effects. The reliability of thin dielectrics and hot carrier degradation of transistors are also featured. Topics include: modeling and simulation of failure mechanisms; reliability issues for submicron IC technologies and packaging; stresses in thin films/lines; gate oxides; barrier layers; electromigration mechanisms; reliability issues for Cu metallizations; electromigration and microstructure; electromigration and stress voiding in circuit interconnects; and resistance measurements of electromigration damage.

Materials Reliability in Microelectronics VI: Volume 428
Materials Reliability in Microelectronics VI: Volume 428

Author: William F. Filter

Publisher:

Published: 1996-11-18

Total Pages: 616

ISBN-13:

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MRS books on materials reliability in microelectronics have become the snapshot of progress in this field. Reduced feature size, increased speed, and larger area are all factors contributing to the continual performance and functionality improvements in integrated circuit technology. These same factors place demands on the reliability of the individual components that make up the IC. Achieving increased reliability requires an improved understanding of both thin-film and patterned-feature materials properties and their degradation mechanisms, how materials and processes used to fabricate ICs interact, and how they may be tailored to enable reliability improvements. This book focuses on the physics and materials science of microelectronics reliability problems rather than the traditional statistical, accelerated electrical testing aspects. Studies are grouped into three large sections covering electromigration, gate oxide reliability and mechanical stress behavior. Topics include: historical summary; reliability issues for Cu metallization; characterization of electromigration phenomena; modelling; microstructural evolution and influences; oxide and device reliability; thin oxynitride dielectrics; noncontact diagnostics; stress effects in thin films and interconnects and microbeam X-ray techniques for stress measurements.

Materials, Technology and Reliability for Advanced Interconnects and Low-K Dielectrics - 2004
Materials, Technology and Reliability for Advanced Interconnects and Low-K Dielectrics - 2004

Author: R. J. Carter

Publisher:

Published: 2004-09

Total Pages: 432

ISBN-13:

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The scaling of device dimensions with a simultaneous increase in functional density has imposed tremendous challenges for materials, technology, integration and reliability of interconnects. To meet requirements of the ITRS roadmap, new materials are being introduced at a faster pace in all functions of multilevel interconnects. The issues addressed in this book cannot be dispelled as simply selecting a low-k material and integrating it into a copper damascene process. The intricacies of the back end for sub-100nm technology include novel processing of low-k materials, employing pore-sealing techniques and capping layers, introducing advanced dielectric and diffusion barriers, and developing novel integration schemes. This is in addition to concerns of performance, yield, and reliability appropriate to nanoscaled interconnects. Although many challenges continue to impede progress along the ITRS roadmap, the contributions in this book confront them head-on. It provides a scientific understanding of the issues and stimulate new approaches to advanced multilevel interconnects.

Diagnostic Techniques for Semiconductor Materials Processing: Volume 406
Diagnostic Techniques for Semiconductor Materials Processing: Volume 406

Author: Stella W. Pang

Publisher:

Published: 1996-03-18

Total Pages: 616

ISBN-13:

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The fabrication of Si- and compound semiconductor-based devices involves a number of steps ranging from material growth to pattern definition by lithography, and ultimately, pattern transfer by etching/deposition. The key to device manufacturing, however, is reproducibility, low cost and high yield. Diagnostic techniques allow correlation between processing and actual device performance to be established. Researchers from universities, industry and government come together in this book to examine the advances in diagnostic techniques that provide critical information on structural, optical and electrical properties of semiconductor devices, as well as monitoring techniques for equipment/processes for control and feedback. The overriding goal is for rapid, accurate materials characterization, both in situ and ex situ. Topics include: in situ diagnostics; proximal probe microscopies; optical probes of devices and device properties; spectroscopic ellipsometry/structural diagnostics; and material analysis - X-ray techniques, strain measurements and passivation.

Gallium Nitride and Related Materials: Volume 395
Gallium Nitride and Related Materials: Volume 395

Author: F. A. Ponce

Publisher:

Published: 1996-09-04

Total Pages: 1008

ISBN-13:

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This book reflects the excitement in the scientific community about III-V nitrides. Based on papers presented at the First International Symposium on Gallium Nitride and Related Materials (ISGN-1), it reveals the large amount of work that has taken place since the field exploded with the announcement of commercial blue-light-emitting devices. The compound semiconductors in the III-V nitride systems are of increasing interest for high-performance optoelectronic and electronic device applications. These wide-bandgap semiconductor materials are also of great fundamental scientific interest because of their unique structural, electrical and optical properties. From the advances in the technologies for the heteroepitaxial growth of these materials, leading to improved quality and device performance, it is expected that III-V nitrides will soon be of significant practical and commercial interest. Topics include: crystal growth - substrates and early stages; molecular beam growth techniques; chemical vapor phase and alloys and novel growth techniques; structural properties; electronic properties; optical properties; point defects; hydrogen, etching and other materials processes; surfaces and metal contacts and devices.