This book explains concepts of transmission electron microscopy (TEM) and x-ray diffractometry (XRD) that are important for the characterization of materials. The fourth edition adds important new techniques of TEM such as electron tomography, nanobeam diffraction, and geometric phase analysis. A new chapter on neutron scattering completes the trio of x-ray, electron and neutron diffraction. All chapters were updated and revised for clarity. The book explains the fundamentals of how waves and wavefunctions interact with atoms in solids, and the similarities and differences of using x-rays, electrons, or neutrons for diffraction measurements. Diffraction effects of crystalline order, defects, and disorder in materials are explained in detail. Both practical and theoretical issues are covered. The book can be used in an introductory-level or advanced-level course, since sections are identified by difficulty. Each chapter includes a set of problems to illustrate principles, and the extensive Appendix includes laboratory exercises.
Scanning transmission electron microscopy has become a mainstream technique for imaging and analysis at atomic resolution and sensitivity, and the authors of this book are widely credited with bringing the field to its present popularity. Scanning Transmission Electron Microscopy(STEM): Imaging and Analysis will provide a comprehensive explanation of the theory and practice of STEM from introductory to advanced levels, covering the instrument, image formation and scattering theory, and definition and measurement of resolution for both imaging and analysis. The authors will present examples of the use of combined imaging and spectroscopy for solving materials problems in a variety of fields, including condensed matter physics, materials science, catalysis, biology, and nanoscience. Therefore this will be a comprehensive reference for those working in applied fields wishing to use the technique, for graduate students learning microscopy for the first time, and for specialists in other fields of microscopy.
Electron microscopy has revolutionized our understanding the extraordinary intellectual demands required of the mi of materials by completing the processing-structure-prop croscopist in order to do the job properly: crystallography, erties links down to atomistic levels. It now is even possible diffraction, image contrast, inelastic scattering events, and to tailor the microstructure (and meso structure ) of materials spectroscopy. Remember, these used to be fields in them to achieve specific sets of properties; the extraordinary abili selves. Today, one has to understand the fundamentals ties of modem transmission electron microscopy-TEM of all of these areas before one can hope to tackle signifi instruments to provide almost all of the structural, phase, cant problems in materials science. TEM is a technique of and crystallographic data allow us to accomplish this feat. characterizing materials down to the atomic limits. It must Therefore, it is obvious that any curriculum in modem mate be used with care and attention, in many cases involving rials education must include suitable courses in electron mi teams of experts from different venues. The fundamentals croscopy. It is also essential that suitable texts be available are, of course, based in physics, so aspiring materials sci for the preparation of the students and researchers who must entists would be well advised to have prior exposure to, for carry out electron microscopy properly and quantitatively.
Topics in Electron Diffraction and Microscopy of Materials celebrates the retirement of Professor Michael Whelan from the University of Oxford. Professor Whelan taught many of today's heads of department and was a pioneer in the development and use of electron microscopy. His collaborators and colleagues, each one of whom has made important advances in the use of microscopy to study materials, have contributed to this cohesive work. The book provides a useful overview of current applications for selected electron microscope techniques that have become important and widespread in their use for furthering our understanding of how materials behave. Linked through the dynamical theory of electron diffraction and inelastic scattering, the topics discussed include the history and impact of electron microscopy in materials science, weak-beam techniques for problem solving, defect structures and dislocation interactions, using beam diffraction patterns to look at defects in structures, obtaining chemical identification at atomic resolution, theoretical developments in backscattering channeling patterns, new ways to look at atomic bonds, using numerical simulations to look at electronic structure of crystals, RHEED observations for MBE growth, and atomic level imaging applications.
Retaining the comprehensive and in-depth approach that cemented the bestselling first edition's place as a standard reference in the field, the Handbook of Semiconductor Manufacturing Technology, Second Edition features new and updated material that keeps it at the vanguard of today's most dynamic and rapidly growing field. Iconic experts Robert Doering and Yoshio Nishi have again assembled a team of the world's leading specialists in every area of semiconductor manufacturing to provide the most reliable, authoritative, and industry-leading information available. Stay Current with the Latest Technologies In addition to updates to nearly every existing chapter, this edition features five entirely new contributions on... Silicon-on-insulator (SOI) materials and devices Supercritical CO2 in semiconductor cleaning Low-κ dielectrics Atomic-layer deposition Damascene copper electroplating Effects of terrestrial radiation on integrated circuits (ICs) Reflecting rapid progress in many areas, several chapters were heavily revised and updated, and in some cases, rewritten to reflect rapid advances in such areas as interconnect technologies, gate dielectrics, photomask fabrication, IC packaging, and 300 mm wafer fabrication. While no book can be up-to-the-minute with the advances in the semiconductor field, the Handbook of Semiconductor Manufacturing Technology keeps the most important data, methods, tools, and techniques close at hand.
This book provides the reader with a working knowledge sufficient to select microbeam techniques for the efficient, cost-effective solution of complex problems arising in today's high-tech industries. Primarily written for the industrial analyst whose field of expertise is other than microbeam analysis, it will also be of help to engineers, plant chemists and industrial research scientists who often seek the aid of the microbeam analyst in their problem solving. Research and plant managers as well as administrators may also find this book helpful since they may be called upon to select and/or approve high-priced microbeam instruments.The book is organized into two parts. Part I gives a brief description of the various techniques and critically compares their capabilities and limitations. Part II consists of selected applications which show how the various techniques or their combinations are applied to characterize materials and to guide research in a wide variety of fields. The examples and case histories will undoubtedly aid the reader in problem solving, quality assurance and research-related tasks. Newcomers to the field will find enough information in the book to enable them to begin practical work and to apply the techniques.
This book/CD package provides a reference on electron energy loss spectrometry (EELS) with the transmission electron microscope, an established technique for chemical and structural analysis of thin specimens in a transmission electron microscope. Describing the issues of instrumentation, data acquisition, and data analysis, the authors apply this technique to several classes of materials, namely ceramics, metals, polymers, minerals, semiconductors, and magnetic materials. The accompanying CD-ROM consists of a compendium of experimental spectra.
This text is a companion volume to Transmission Electron Microscopy: A Textbook for Materials Science by Williams and Carter. The aim is to extend the discussion of certain topics that are either rapidly changing at this time or that would benefit from more detailed discussion than space allowed in the primary text. World-renowned researchers have contributed chapters in their area of expertise, and the editors have carefully prepared these chapters to provide a uniform tone and treatment for this exciting material. The book features an unparalleled collection of color figures showcasing the quality and variety of chemical data that can be obtained from today’s instruments, as well as key pitfalls to avoid. As with the previous TEM text, each chapter contains two sets of questions, one for self assessment and a second more suitable for homework assignments. Throughout the book, the style follows that of Williams & Carter even when the subject matter becomes challenging—the aim is always to make the topic understandable by first-year graduate students and others who are working in the field of Materials Science Topics covered include sources, in-situ experiments, electron diffraction, Digital Micrograph, waves and holography, focal-series reconstruction and direct methods, STEM and tomography, energy-filtered TEM (EFTEM) imaging, and spectrum imaging. The range and depth of material makes this companion volume essential reading for the budding microscopist and a key reference for practicing researchers using these and related techniques.