The work studies under different physical conditions the carrier contribution to elastic constants in heavily doped optoelectronic materials. In the presence of intense photon field the authors apply the Heisenberg Uncertainty Principle to formulate electron statistics. Many open research problems are discussed and numerous potential applications as quantum sensors and quantum cascade lasers are presented.
The elastic constant (EC) is a very important mechanical property of the these materials and its significance is already well known in literature. This first monograph solely deals with the quantum effects in EC of heavily doped (HD) low dimensional materials. The materials considered are HD quantum confined nonlinear optical, III-V, II-VI, IV-VI, GaP, Ge, PtSb₂, stressed materials, GaSb, Te, II-V, Bi₂Te₃, lead germanium telluride, zinc and cadmium diphosphides, and quantum confined III-V, II-VI, IV-VI, and HgTe/CdTe super-lattices with graded interfaces and effective mass super-lattices. The presence of intense light waves in optoelectronics and strong electric field in nano-devices changes the band structure of semiconductors in fundamental ways, which have also been incorporated in the study of EC in HD low dimensional optoelectronic compounds that control the studies of the HD quantum effect devices under strong fields. The importance of measurement of band gap in optoelectronic materials under intense external fields has also been discussed in this context. The influences of magnetic quantization, crossed electric and quantizing fields, electric field and light waves on the EC in HD semiconductors and super-lattices are discussed.The content of this book finds twenty-five different applications in the arena of nano-science and nano-technology. We The authors have discussed the experimental methods of determining the Einstein Relation, screening length and EC in this context. This book contains circa 200 open research problems which form the integral part of the text and are useful for both PhD aspirants and researchers in the fields of condensed matter physics, materials science, solid state sciences, nano-science and technology and allied fields in addition to the graduate courses in semiconductor nanostructures.
This volume contains the complete set of papers presented at the First U. S. -U. S. S. R. Sciences Cooperation Seminar on "Optical Information Processing" held at the U. S. National Academy of Sciences in Washington, D. C. from 16 - 20 June 1975 under the sponsorship of the National Science Foundation in cooperation with the U. S. S. R. Academy of Sciences. The papers present the latest theoretical advances and ex perimental state of the art in the newly developing field of "opti cal information processing", with particular emphasis on appli cations to communication, information storage and processing. Digital as well as optical systems are discussed in terms of concepts and implementations. Included are coherent and inco herent optical processing systems (for images and signals), materials and devices for optical computing, acousto-optic signal processing, memories (optical, digital and holographic), optical logic and optically-accessed digital stores, non-linear optical processing, as well as an analysis of the information capacity of optical processing systems and a report on new ex tensions of information processing in synthetic aperture radar. Detailed configurations and new manufacturing techniques for several components are presented, including such topics as "asymmetric interference fringes in reflected light" and' kino form optical elements" of very high quality; these are phase plates having a carefully controlled thickness, somewhat com parable to the famous Schmidt plates and which could have an important role in many optical computer and communications systems.
In recent years, with the advent of fine line lithographical methods, molecular beam epitaxy, organometallic vapour phase epitaxy and other experimental techniques, low dimensional structures having quantum confinement in one, two and three dimensions (such as ultrathin films, inversion layers, accumulation layers, quantum well superlattices, quantum well wires, quantum wires superlattices, magneto-size quantizations, and quantum dots) have attracted much attention not only for their potential in uncovering new phenomena in nanoscience and technology, but also for their interesting applications in the areas of quantum effect devices. In ultrathin films, the restriction of the motion of the carriers in the direction normal to the film leads to the quantum size effect and such systems find extensive applications in quantum well lasers, field effect transistors, high speed digital networks and also in other quantum effect devices. In quantum well wires, the carriers are quantized in two transverse directions and only one-dimensional motion of the carriers is allowed.