Ion Implanted GaAs IC (Integrated Circuit) Process Technology
Ion Implanted GaAs IC (Integrated Circuit) Process Technology

Author: F. H. Eisen

Publisher:

Published: 1980

Total Pages: 67

ISBN-13:

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This report covers the sixth quarter, Phase II of a program on ion implanted planar GaAs integrated circuit technology. The bulk of the work on this program is carried out at the Rockwell International Electronics Research Center (ERC). Significant assistance is provided by three subcontractors; Crystal Specialties Inc. in crystal growth, California Institute of Technology in ion implantation and related materials technologies, and Cornell University in device modeling. With MSI circuit complexity well demonstrated, the circuit developement work in this quarter was focused on the testing of MSI/LSI circuits (250-500 gates), and on the design of an LSI circuit (1000 gates). The preliminary data from the MSI/LSI circuits (from mask set AR4) are promising. Although the 5X5 but parallel multiplier (260 gates) did not operate completely and did not function at its predicted speed, the test data indicate that it can meet the design expectations when a mask error (a missing connection on 16 gates) is corrected. The 2 X 32 stage shift register (550 gates) has functioned up to 33 stages involving approximately 300 gates. Further testing is scheduled. An 8 X 8 bit parallel multiplier (1008 gates) has been designed, layed out, and the mask set containing this circuit is being fabricated. Keywords: Semi insulating, Ion implantation, Integrated circuits, High speed logic, Gallium arsenides.

Ion Implanted GaAs I.C. Process Technology
Ion Implanted GaAs I.C. Process Technology

Author: F. H. Eisen

Publisher:

Published: 1977

Total Pages: 22

ISBN-13:

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This report presents the first quarter results of a program designed to develop a planar process technology for GaAs integrated circuits. Planar structures will be achieved by ion implantation into localized areas of semi-insulating substrates to form device areas with proper electrical characteristics. Caltech, Cornell University, and Crystal Specialties, Inc. are subcontractors in this program. In bulk crystal growth, progress in eliminating causes of boat wetting has led to a more stable substrate fabrication process with 65% yield. Keywords: Semi-insulating GaAs; Ion implantation, IC, and Integrated circuits.

LSI/VLSI Ion Implanted GaAs IC (Integrated Circuits) Processing
LSI/VLSI Ion Implanted GaAs IC (Integrated Circuits) Processing

Author: R. Zucca

Publisher:

Published: 1981

Total Pages: 71

ISBN-13:

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This report covers the fourth quarter of a program on LSI/VLSI ion implanted planar GaAs integrated circuit processing. The goal of this program is to realize the full potential of GaAs digital integrated circuits employing depletion mode MESFETs by developing the necessary processing methods and material capabilities to extend device complexity to VLSI. In the fourth quarter fabrication of the first wafers with mask set AR6, the last mask set to be employed with one inch wafers, was completed. Work on circuit reliability has continued, while process steps that may be limiting circuit yield are being investigated.

GaAs Microelectronics
GaAs Microelectronics

Author: Norman G. Einspruch

Publisher: Academic Press

Published: 2014-12-01

Total Pages: 472

ISBN-13: 1483217779

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VLSI Electronics Microstructure Science, Volume 11: GaAs Microelectronics presents the important aspects of GaAs (Gallium Arsenide) IC technology development ranging from materials preparation and IC fabrication to wafer evaluation and chip packaging. The volume is comprised of eleven chapters. Chapter 1 traces the historical development of GaAs technology for high-speed and high-frequency applications. This chapter summarizes the important properties of GaAs that serve to make this material and its related compounds technologically important. Chapter 2 covers GaAs substrate growth, ion implantation and annealing, and materials characterization, technologies that are essential for IC development. Chapters 3-6 describe the various IC technologies that are currently under development. These include microwave and digital MESFET ICs, the most mature technologies, and bipolar and field-effect heterostructure transistor ICs. The high-speed capability of GaAs ICs introduces new problems, on-wafer testing and packaging. These topics are discussed in Chapters 7 and 8. Applications for GaAs ICs are covered in Chapters 9 and 10. The first of these chapters is concerned with high speed computer applications; the second addresses military applications. The book concludes with a chapter on radiation effects in GaAs ICs. Scientists, engineers, researchers, device designers, and systems architects will find the book useful.

LSI/VLSI (Large Scale Integration/Very Large Scale Integration) Ion Implanted GaAs (Gallium Arsenide) IC Processing
LSI/VLSI (Large Scale Integration/Very Large Scale Integration) Ion Implanted GaAs (Gallium Arsenide) IC Processing

Author: R. R. Zucca

Publisher:

Published: 1984

Total Pages: 147

ISBN-13:

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This report covers a program designed to realize the full potential of GaAs integrated circuits by expanding and improving fabrication and material techniques. The main accomplishment of the program was the successful implementation of the fabrication of integrated circuits on 3-inch diameter GaAs wafers. In addition, this program covered many activities related to GaAs IC processing. These include: work on semi-insulating material growth and characterization, investigation of ion implantation techniques (work carried out at the California Institute of Technology); evaluation of device uniformity, and investigation of its controlling factors; investigation of metallization yield and reliability, and improvements of processing techniques resulting from this study; design and testing of a multiplier and programmable shift registers/pattern generators; evaluation of mask programmable logic arrays to meet ERADCOMs needs for high performance communication systems; investigation of the hardness of GaAs ICs to total dose and transient ionizing radiation, and modelling of MESFET devices (this work carried out at North Carolina State University). (Author).

Ion Implantation and Beam Processing
Ion Implantation and Beam Processing

Author: J. S. Williams

Publisher: Academic Press

Published: 2014-06-28

Total Pages: 432

ISBN-13: 1483220648

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Ion Implantation and Beam Processing covers the scientific and technological advances in the fields of ion implantation and beam processing. The book discusses the amorphization and crystallization of semiconductors; the application of the Boltzmann transport equation to ion implantation in semiconductors and multilayer targets; and the high energy density collision cascades and spike effects. The text also describes the implantation of insulators (ices and lithographic materials); the ion-bombardment-induced compositions changes in alloys and compounds; and the fundamentals and applications of ion beam and laser mixing. The high-dose implantation and the trends of ion implantation in silicon technology are also considered. The book further tackles the implantation in gaAs technology and the contacts and interconnections on semiconductors. Engineers and people involved in microelectronics will find the book invaluable.

Ion Implantation and Synthesis of Materials
Ion Implantation and Synthesis of Materials

Author: Michael Nastasi

Publisher: Springer Science & Business Media

Published: 2007-05-16

Total Pages: 271

ISBN-13: 3540452982

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Ion implantation is one of the key processing steps in silicon integrated circuit technology. Some integrated circuits require up to 17 implantation steps and circuits are seldom processed with less than 10 implantation steps. Controlled doping at controlled depths is an essential feature of implantation. Ion beam processing can also be used to improve corrosion resistance, to harden surfaces, to reduce wear and, in general, to improve materials properties. This book presents the physics and materials science of ion implantation and ion beam modification of materials. It covers ion-solid interactions used to predict ion ranges, ion straggling and lattice disorder. Also treated are shallow-junction formation and slicing silicon with hydrogen ion beams. Topics important for materials modification, such as ion-beam mixing, stresses, and sputtering, are also described.

Cathodoluminescence Characterization of Ion Implanted GaAs
Cathodoluminescence Characterization of Ion Implanted GaAs

Author: Milton L. Cone

Publisher:

Published: 1980

Total Pages: 135

ISBN-13:

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The unique properties of GaAs make it possible to construct integrated circuit devices that are impossible in Si. The Air Force Avionics Laboratory/AADR has been developing this technology for a number of years. The difficulty of introducing dopants by diffusion has lead ion implantation to play an increasing role in the fabrication process. The present production technique for high performance devices is to fabricate large quantities and select those few that meet the desired specifications. Having a nondestructive technique that can be used to characterize the implantation process during fabrication of the device so as to reject faulty device structures can save valuable time as well as money. Depth-resolved cathodoluminescence is a process that can be used for this purpose. This research develops and verifies a model of cathodoluminescence in ion implanted GaAs. This model can now be used as a tool for further study of ion implanted GaAs. This is the first step in developing cathodoluminescence as a tool for deducing the shape of the ion implanted depth profile in semiconductor materials. (Author).

Ion Implantation in Semiconductors
Ion Implantation in Semiconductors

Author: Ingolf Ruge

Publisher: Springer Science & Business Media

Published: 2012-12-06

Total Pages: 519

ISBN-13: 3642806600

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In recent years great progress has been made in the field of ion implantation, particularly with respect to applications in semiconductors. It would be impos sible not to note the growing interest in this field, both by research groups and those directly concerned with production of devices. Furthermore, as several papers have pointed out, ion implantation and its associated technologies promise exciting advances in the development of new kinds of devices and provide power ful new tools for materials investigations. It was, therefore, appropriate to arrange the II. International Conference on Ion Implantation in Semiconductors within the rather short time of one year since the first conference was held in 1970 in Thousand Oaks, California. Although ori ginally planned on a small scale with a very limited number of participants, more than two hundred scientists from 15 countries participated in the Conference which was held May 24 - 28, 1971 at the Congress Center in Garmisch-Partenkirchen. This volume contains the papers that were presented at the Conference. Due to the tremendous volume of research presented, publication here of all the works in full detail was not possible. Many authors therefore graciously agreed to submit abbreviated versions of their papers.