Ion Beam Modification of Metal-silicon Contacts
Author: Christopher R. Gardner
Publisher:
Published: 1984
Total Pages: 316
ISBN-13:
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Author: Christopher R. Gardner
Publisher:
Published: 1984
Total Pages: 316
ISBN-13:
DOWNLOAD EBOOKAuthor: J.S. Williams
Publisher: Newnes
Published: 2012-12-02
Total Pages: 1157
ISBN-13: 0444599746
DOWNLOAD EBOOKThis conference consisted of 15 oral sessions, including three plenary papers covering areas of general interest, 22 specialist invited papers and 51 contributed presentations as well as three poster sessions. There were several scientific highlights covering a diverse spectrum of materials and ion beam processing methods. These included a wide range of conventional and novel applications such as: optical displays and opto-electronics, motor vehicle and tooling parts, coatings tailored for desired properties, studies of fundamental defect properties, the production of novel (often buried) compounds, and treating biomedical materials. The study of nanocrystals produced by ion implantation in a range of host matrices, particularly for opto-electronics applications, was one especially new and exciting development. Despite several decades of study, major progress was reported at the conference in understanding defect evolution in semiconductors and the role of defects in transient impurity diffusion. The use of implantation to tune or isolate optical devices and in forming optically active centres and waveguides in semiconductors, polymers and oxide ceramics was a major focus of several presentations at the conference. The formation of hard coatings by ion assisted deposition or direct implantation was also an area which showed much recent progress. Ion beam techniques had also developed apace, particularly those based on plasma immersion ion implantation or alternative techniques for large area surface treatment. Finally, the use of ion beams for the direct treatment of cancerous tissue was a particularly novel and interesting application of ion beams.
Author: I. Yamada
Publisher: Elsevier
Published: 2013-10-22
Total Pages: 646
ISBN-13: 1483164047
DOWNLOAD EBOOKLaser and Ion Beam Modification of Materials is a compilation of materials from the proceedings of the symposium U: Material Synthesis and Modification by Ion beams and Laser Beams. This collection discusses the founding of the KANSAI Science City in Japan, and the structures, equipment, and research projects of two institutions are discussed pertaining to eV-MeV ion beams. A description of ion beams as used in materials research and in manufacturing processes, along with trends in ion implantation technology in semiconductors, is discussed. Research into ion beams by China and its industrial uses in non-semiconductor area is noted. For industrial applications, developing technology in terms of high speed, large surface modifications and use of high doses is important. Thus, the development of different ion beam approaches is examined. Industrial applications of ion and laser processing are discussed as cluster beams are used in solid state physics and chemistry. Mention is made on a high power discharge pumped solid state physics (ArF) excimer laser as a potential light source for better material processing. Under ion beam material processing is nanofabrication using focused ion beams, important for research work in mesoscopic systems. Progress in the use of ion-beam mixing using kinetic energy of ion-beams to mingle with pre-deposited surface layers of substrate materials has shown promise. Advanced materials researchers and scientists, as well as academicians in the field of nuclear physics, will find this collection helpful.
Author: B. R. Appleton
Publisher:
Published: 1985-08-30
Total Pages: 426
ISBN-13:
DOWNLOAD EBOOKThe MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Author: A.A. Gippius
Publisher: Elsevier
Published: 1992-04-24
Total Pages: 392
ISBN-13: 0444596771
DOWNLOAD EBOOKThis volume addresses the burgeoning field of wide band gap materials. The 64 contributed and invited papers will do much to stimulate the well-justified ongoing work, both theoretical and experimental, in this area. The high standard of the papers attests to the significant progress that has been made in this field, as well as reporting on the challenging problems that still remain to be solved.
Author: Simon S. Cohen
Publisher: Academic Press
Published: 2014-12-01
Total Pages: 435
ISBN-13: 1483217795
DOWNLOAD EBOOKVLSI Electronics Microstructure Science, Volume 13: Metal-Semiconductor Contacts and Devices presents the physics, technology, and applications of metal-semiconductor barriers in digital integrated circuits. The emphasis is placed on the interplay among the theory, processing, and characterization techniques in the development of practical metal-semiconductor contacts and devices. This volume contains chapters that are devoted to the discussion of the physics of metal-semiconductor interfaces and its basic phenomena; fabrication procedures; and interface characterization techniques, particularly, ohmic contacts. Contacts that involve polycrystalline silicon; applications of the metal-semiconductor barriers in MOS, bipolar, and MESFET digital integrated circuits; and methods for measuring the barrier height are covered as well. Process engineers, device physicists, circuit designers, and students of this discipline will find the book very useful.
Author:
Publisher: ASM International
Published: 2001-01-01
Total Pages: 162
ISBN-13: 0871707454
DOWNLOAD EBOOKDeveloped by the Electronic Device Failure Analysis Society (EDFAS) Publications Committee.
Author: Stephen E. Saddow
Publisher:
Published: 2003-03-25
Total Pages: 432
ISBN-13:
DOWNLOAD EBOOKAdvances in silicon carbide materials, processing and device design have recently resulted in implementation of SiC-based electronic systems and offer great promise in high-voltage, high-temperature and high-frequency applications. This volume focuses on new developments in basic science of SiC materials as well as rapidly maturing device technologies. The challenges in this field include understanding and decreasing defect densities in bulk SiC crystals, controlling morphology and residual impurities in epilayers, optimization of implant activation and oxide-SiC interfaces, and developing novel device structures. This book brings together the crystal growers, physicists and device experts needed to continue the rapid pace of silicon-carbide-based technology. Topics include: epitaxial growth; characterization/defects; MOS technology; SiC processing and devices.
Author: Sergey Rumyantsev
Publisher: World Scientific
Published: 2006-07-25
Total Pages: 342
ISBN-13: 981447777X
DOWNLOAD EBOOKAfter many years of research and development, silicon carbide has emerged as one of the most important wide band gap semiconductors. The first commercial SiC devices — power switching Schottky diodes and high temperature MESFETs — are now on the market. This two-volume book gives a comprehensive, up-to-date review of silicon carbide materials properties and devices. With contributions by recognized leaders in SiC technology and materials and device research, SiC Materials and Devices is essential reading for technologists, scientists and engineers who are working on silicon carbide or other wide band gap materials and devices. The volumes can also be used as supplementary textbooks for graduate courses on silicon carbide and wide band gap semiconductor technology.
Author:
Publisher: ASM International
Published: 2002-01-01
Total Pages: 160
ISBN-13: 0871707691
DOWNLOAD EBOOKProvides new or expanded coverage on the latest techniques for microelectronic failure analysis. The CD-ROM includes the complete content of the book in fully searchable Adobe Acrobat format. Developed by the Electronic Device Failure Analysis Society (EDFAS) Publications Committee