This book is a useful reference for practicing electrical engineers as well as a textbook for a junior/senior or graduate level course in electrical engineering. The authors combine two subjects: device modeling and circuit simulation - by providing a large number of well-prepared examples of circuit simulations immediately following the description of many device models.
Bridges the gap between device modelling and analog circuit design. Includes dedicated software enabling actual circuit design. Covers the three significant models: BSIM3, Model 9 & , and EKV. Presents practical guidance on device development and circuit implementation. The authors offer a combination of extensive academic and industrial experience.
This is the first book dedicated to the next generation of MOSFET models. Addressed to circuit designers with an in-depth treatment that appeals to device specialists, the book presents a fresh view of compact modeling, having completely abandoned the regional modeling approach.Both an overview of the basic physics theory required to build compact MOSFET models and a unified treatment of inversion-charge and surface-potential models are provided. The needs of digital, analog and RF designers as regards the availability of simple equations for circuit designs are taken into account. Compact expressions for hand analysis or for automatic synthesis, valid in all operating regions, are presented throughout the book. All the main expressions for computer simulation used in the new generation compact models are derived.Since designers in advanced technologies are increasingly concerned with fluctuations, the modeling of fluctuations is strongly emphasized. A unified approach for both space (matching) and time (noise) fluctuations is introduced.
Numerical simulation and modelling have been growing in importance and seeing steadily increasing practical application. The proliferation of applications and physical domains for which simulation technologies are now needed, compounded by generally increased complexity, has expanded the scope of numerical simulation and modelling within CAD and spurred new research directions. Numerical Simulation and Modelling of Electronic and Biochemical Systems provides an introduction to the fundamentals of numerical simulation, and to the basics of modelling electronic circuits and biochemical reactions. The emphasis is on capturing a minimal set of important concepts succinctly, but concretely enough that the reader will be left with an adequate foundation for further independent exploration. Starting from mathematical models of basic electronic elements, circuits are modelled as nonlinear differential-algebraic equation (DAE) systems. Two basic techniques - quiescent steady state and transient - for solving these differential equations systems are then developed. It is then shown how biochemical reactions can also be modelled deterministically as DAEs. Following this, frequency domain techniques for finding sinusoidal steady states of linear DAEs are developed, as are direct and adjoint techniques for computing parameter sensitivities and the effects of stationary random noise. For readers interested in a glimpse of topics beyond these basics, an introduction to nonlinear periodic steady state methods (harmonic balance and shooting) and the multitime partial differential equation formulation is provided. Also provided is an overview of model order reduction, an important topic of current research that has roots in numerical simulation algorithms. Finally, sample applications of nonlinear oscillator macromodels - in circuits (PLLs), biochemical reaction-diffusion systems and nanoelectronics - are presented.
A DEFINITIVE TEXT ON DEVELOPING CIRCUIT SIMULATORS Circuit Simulation gives a clear description of the numerical techniques and algorithms that are part of modern circuit simulators, with a focus on the most commonly used simulation modes: DC analysis and transient analysis. Tested in a graduate course on circuit simulation at the University of Toronto, this unique text provides the reader with sufficient detail and mathematical rigor to write his/her own basic circuit simulator. There is detailed coverage throughout of the mathematical and numerical techniques that are the basis for the various simulation topics, which facilitates a complete understanding of practical simulation techniques. In addition, Circuit Simulation: Explores a number of modern techniques from numerical analysis that are not synthesized anywhere else Covers network equation formulation in detail, with an emphasis on modified nodal analysis Gives a comprehensive treatment of the most relevant aspects of linear and nonlinear system solution techniques States all theorems without proof in order to maintain the focus on the end-goal of providing coverage of practical simulation methods Provides ample references for further study Enables newcomers to circuit simulation to understand the material in a concrete and holistic manner With problem sets and computer projects at the end of every chapter, Circuit Simulation is ideally suited for a graduate course on this topic. It is also a practical reference for design engineers and computer-aided design practitioners, as well as researchers and developers in both industry and academia.
The steady downscaling of device-feature size combined with a rapid increase in circuit complexity as well as the introduction of new device concepts based on non-silicon-material systems poses great challenges for device and circuit designers. One of the major tasks is the development of new and improved device models needed for accurate device and circuit design. Another task is the development of new circuit-simulation tools to handle very large and complex circuits. This book addresses both these issues with up-to-date reviews written by leading experts in the field.The first three chapters of the book discuss advanced device models both for existing technologies and for new, emerging technologies. Among the topics covered are models for MOSFETs, thin-film transitors (TFTs), and compound semiconductor devices, including GaAs HEMTs and HFETs, heterodimensional devices, quantum-tunneling devices, as well as wide-bandgap devices. Chapters 4 and 5 discuss advanced circuit simulators that hold promise for handling circuits of much higher complexity than what is possible for typical state-of-the-art circuit simulators today.
Compact Models for Integrated Circuit Design: Conventional Transistors and Beyond provides a modern treatise on compact models for circuit computer-aided design (CAD). Written by an author with more than 25 years of industry experience in semiconductor processes, devices, and circuit CAD, and more than 10 years of academic experience in teaching compact modeling courses, this first-of-its-kind book on compact SPICE models for very-large-scale-integrated (VLSI) chip design offers a balanced presentation of compact modeling crucial for addressing current modeling challenges and understanding new models for emerging devices. Starting from basic semiconductor physics and covering state-of-the-art device regimes from conventional micron to nanometer, this text: Presents industry standard models for bipolar-junction transistors (BJTs), metal-oxide-semiconductor (MOS) field-effect-transistors (FETs), FinFETs, and tunnel field-effect transistors (TFETs), along with statistical MOS models Discusses the major issue of process variability, which severely impacts device and circuit performance in advanced technologies and requires statistical compact models Promotes further research of the evolution and development of compact models for VLSI circuit design and analysis Supplies fundamental and practical knowledge necessary for efficient integrated circuit (IC) design using nanoscale devices Includes exercise problems at the end of each chapter and extensive references at the end of the book Compact Models for Integrated Circuit Design: Conventional Transistors and Beyond is intended for senior undergraduate and graduate courses in electrical and electronics engineering as well as for researchers and practitioners working in the area of electron devices. However, even those unfamiliar with semiconductor physics gain a solid grasp of compact modeling concepts from this book.
From power electronics to power integrated circuits (PICs), smart power technologies, devices, and beyond, Integrated Power Devices and TCAD Simulation provides a complete picture of the power management and semiconductor industry. An essential reference for power device engineering students and professionals, the book not only describes the physics inside integrated power semiconductor devices such lateral double-diffused metal oxide semiconductor field-effect transistors (LDMOSFETs), lateral insulated-gate bipolar transistors (LIGBTs), and super junction LDMOSFETs but also delivers a simple introduction to power management systems. Instead of abstract theoretical treatments and daunting equations, the text uses technology computer-aided design (TCAD) simulation examples to explain the design of integrated power semiconductor devices. It also explores next generation power devices such as gallium nitride power high electron mobility transistors (GaN power HEMTs). Including a virtual process flow for smart PIC technology as well as a hard-to-find technology development organization chart, Integrated Power Devices and TCAD Simulation gives students and junior engineers a head start in the field of power semiconductor devices while helping to fill the gap between power device engineering and power management systems.
Most of the recent texts on compact modeling are limited to a particular class of semiconductor devices and do not provide comprehensive coverage of the field. Having a single comprehensive reference for the compact models of most commonly used semiconductor devices (both active and passive) represents a significant advantage for the reader. Indeed, several kinds of semiconductor devices are routinely encountered in a single IC design or in a single modeling support group. Compact Modeling includes mostly the material that after several years of IC design applications has been found both theoretically sound and practically significant. Assigning the individual chapters to the groups responsible for the definitive work on the subject assures the highest possible degree of expertise on each of the covered models.
