3-Dimensional Process Simulation
3-Dimensional Process Simulation

Author: J. Lorenz

Publisher: Springer Science & Business Media

Published: 2012-12-06

Total Pages: 207

ISBN-13: 3709169054

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Whereas two-dimensional semiconductor process simulation has achieved a certain degree of maturity, three-dimensional process simulation is a newly emerging field in which most efforts are dedicated to necessary basic developments. Research in this area is promoted by the growing demand to obtain reliable information on device geometries and dopant distributions needed for three-dimensional device simulation, and challenged by the great algorithmic problems caused by moving interfaces and by the requirement to limit computation times and memory requirements. A workshop (Erlangen, September 5, 1995) provided a forum to discuss the industrial needs, technical problems, and solutions being developed in the field of three-dimensional semiconductor process simulation. Invited presentations from leading semiconductor companies and research Centers of Excellence from Japan, the USA, and Europe outlined novel numerical algorithms, physical models, and applications in this rapidly emerging field.

Technology CAD Systems
Technology CAD Systems

Author: Franz Fasching

Publisher: Springer Science & Business Media

Published: 2012-12-06

Total Pages: 313

ISBN-13: 370919315X

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As the cost of developing new semiconductor technology at ever higher bit/gate densities continues to grow, the value of using accurate TCAD simu lation tools for design and development becomes more and more of a necessity to compete in today's business. The ability to tradeoff wafer starts in an advanced piloting facility for simulation analysis and optimization utilizing a "virtual fab" S/W tool set is a clear economical asset for any semiconductor development company. Consequently, development of more sophisticated, accurate, physics-based, and easy-to-use device and process modeling tools will receive continuing attention over the coming years. The cost of maintaining and paying for one's own internal modeling tool development effort, however, has caused many semiconductor development companies to consider replacing some or all of their internal tool development effort with the purchase of vendor modeling tools. While some (noteably larger) companies have insisted on maintaining their own internal modeling tool development organization, others have elected to depend totally on the tools offered by the TCAD vendors and have consequently reduced their mod eling staffs to a bare minimal support function. Others are seeking to combine the best of their internally developed tool suite with "robust", "proven" tools provided by the vendors, hoping to achieve a certain synergy as well as savings through this approach. In the following sections we describe IBM's internally developed suite of TCAD modeling tools and show several applications of the use of these tools.

Plasma Etching Processes for CMOS Devices Realization
Plasma Etching Processes for CMOS Devices Realization

Author: Nicolas Posseme

Publisher: Elsevier

Published: 2017-01-25

Total Pages: 138

ISBN-13: 0081011962

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Plasma etching has long enabled the perpetuation of Moore's Law. Today, etch compensation helps to create devices that are smaller than 20 nm. But, with the constant downscaling in device dimensions and the emergence of complex 3D structures (like FinFet, Nanowire and stacked nanowire at longer term) and sub 20 nm devices, plasma etching requirements have become more and more stringent. Now more than ever, plasma etch technology is used to push the limits of semiconductor device fabrication into the nanoelectronics age. This will require improvement in plasma technology (plasma sources, chamber design, etc.), new chemistries (etch gases, flows, interactions with substrates, etc.) as well as a compatibility with new patterning techniques such as multiple patterning, EUV lithography, Direct Self Assembly, ebeam lithography or nanoimprint lithography. This book presents these etch challenges and associated solutions encountered throughout the years for transistor realization. - Helps readers discover the master technology used to pattern complex structures involving various materials - Explores the capabilities of cold plasmas to generate well controlled etched profiles and high etch selectivities between materials - Teaches users how etch compensation helps to create devices that are smaller than 20 nm

Simulation of Semiconductor Devices and Processes
Simulation of Semiconductor Devices and Processes

Author: Siegfried Selberherr

Publisher: Springer Science & Business Media

Published: 2012-12-06

Total Pages: 525

ISBN-13: 3709166578

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The "Fifth International Conference on Simulation of Semiconductor Devices and Processes" (SISDEP 93) continues a series of conferences which was initiated in 1984 by K. Board and D. R. J. Owen at the University College of Wales, Swansea, where it took place a second time in 1986. Its organization was succeeded by G. Baccarani and M. Rudan at the University of Bologna in 1988, and W. Fichtner and D. Aemmer at the Federal Institute of Technology in Zurich in 1991. This year the conference is held at the Technical University of Vienna, Austria, September 7 - 9, 1993. This conference shall provide an international forum for the presentation of out standing research and development results in the area of numerical process and de vice simulation. The miniaturization of today's semiconductor devices, the usage of new materials and advanced process steps in the development of new semiconduc tor technologies suggests the design of new computer programs. This trend towards more complex structures and increasingly sophisticated processes demands advanced simulators, such as fully three-dimensional tools for almost arbitrarily complicated geometries. With the increasing need for better models and improved understand ing of physical effects, the Conference on Simulation of Semiconductor Devices and Processes brings together the simulation community and the process- and device en gineers who need reliable numerical simulation tools for characterization, prediction, and development.