Infrared Absorption by Defect Centres in Gallium Phosphide
Author: Samuel Richard Morrison
Publisher:
Published: 1973
Total Pages:
ISBN-13:
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Author: Samuel Richard Morrison
Publisher:
Published: 1973
Total Pages:
ISBN-13:
DOWNLOAD EBOOKAuthor: Bernard Pajot
Publisher: Springer Science & Business Media
Published: 2012-08-28
Total Pages: 532
ISBN-13: 3642180183
DOWNLOAD EBOOKThis book outlines, with the help of several specific examples, the important role played by absorption spectroscopy in the investigation of deep-level centers introduced in semiconductors and insulators like diamond, silicon, germanium and gallium arsenide by high-energy irradiation, residual impurities, and defects produced during crystal growth. It also describes the crucial role played by vibrational spectroscopy to determine the atomic structure and symmetry of complexes associated with light impurities like hydrogen, carbon, nitrogen and oxygen, and as a tool for quantitative analysis of these elements in the materials.
Author: Erika Gesine Grosche
Publisher:
Published: 1997
Total Pages:
ISBN-13:
DOWNLOAD EBOOKAuthor: Luke C. B. Mang
Publisher:
Published: 1975
Total Pages: 66
ISBN-13:
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Publisher:
Published: 1976
Total Pages: 612
ISBN-13:
DOWNLOAD EBOOKAuthor: Vaidyanathan, Kavasseri V
Publisher: National Library of Canada
Published: 1971
Total Pages:
ISBN-13:
DOWNLOAD EBOOKAuthor: Sokrates T. Pantelides
Publisher: CRC Press
Published: 1992-11-30
Total Pages: 952
ISBN-13: 9782881245626
DOWNLOAD EBOOKExamines several key semiconductor deep centers, all carefully chosen to illustrate a variety of essential concepts. A deep center is a lattice defect or impurity that causes very localized bound states and energies deep in the band gap. For each deep center chosen, a scientist instrumental in its development discusses the theoretical and experimental techniques used to understand that center. The second edition contains four new sections treating recent developments, including a chapter on hydrogen in crystalline semiconductors. Annotation copyright by Book News, Inc., Portland, OR
Author: J. Hodby
Publisher:
Published: 1963
Total Pages: 3
ISBN-13:
DOWNLOAD EBOOKAuthor: B. Henderson
Publisher: Springer Science & Business Media
Published: 2013-06-29
Total Pages: 502
ISBN-13: 1468428020
DOWNLOAD EBOOKThe Advanced Study Institute of which this volume is the proceedings was held at the University of Exeter during 24 August to 6 September 1975. There were seventy participants of whom eighteen were lecturers and members of the advisory committee. All NATO countries except Holland, Iceland and Portugal were re presented. In addition a small number of participants came from non-NATO countries Japan, Ireland and Switzerland. An aim of the organising committee was to bring together scientists of wide interests and expertise in the defect structure of insulators and semiconductors. Thus major emphases in the pro gramme concerned the use of spectroscopy and microscopy in revealing the structure of point defects and their aggregates, line defects as well as planar and volume defects. The lectures revealed that in general little is known of the fate of the interstitial in most irradiated solids. Nor are the dynamic properties of defects under stood in sufficient detail that one can state how point defects cluster and eventually become macroscopic defects. Although this book faithfully reproduces the material covered by the invited speakers, it does not really follow the flow of the lectures. This is because it seemed advisable for each lecturer to provide a single self-contained and authoritative manuscript, rather than a series of short articles corresponding to the lectures.
Author: Bell Telephone Laboratories, inc. Libraries and Information Systems Center
Publisher:
Published: 1984
Total Pages: 586
ISBN-13:
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