Hot Carrier Degradation in Semiconductor Devices
Hot Carrier Degradation in Semiconductor Devices

Author: Tibor Grasser

Publisher: Springer

Published: 2014-10-29

Total Pages: 518

ISBN-13: 3319089943

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This book provides readers with a variety of tools to address the challenges posed by hot carrier degradation, one of today’s most complicated reliability issues in semiconductor devices. Coverage includes an explanation of carrier transport within devices and book-keeping of how they acquire energy (“become hot”), interaction of an ensemble of colder and hotter carriers with defect precursors, which eventually leads to the creation of a defect, and a description of how these defects interact with the device, degrading its performance.

Hot Carrier Design Considerations for MOS Devices and Circuits
Hot Carrier Design Considerations for MOS Devices and Circuits

Author: Cheng Wang

Publisher: Springer Science & Business Media

Published: 2012-12-06

Total Pages: 345

ISBN-13: 1468485474

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As device dimensions decrease, hot-carrier effects, which are due mainly to the presence of a high electric field inside the device, are becoming a major design concern. On the one hand, the detrimental effects-such as transconductance degradation and threshold shift-need to be minimized or, if possible, avoided altogether. On the other hand, performance such as the programming efficiency of nonvolatile memories or the carrier velocity inside the devices-need to be maintained or improved through the use of submicron technologies, even in the presence of a reduced power supply. As a result, one of the major challenges facing MOS design engineers today is to harness the hot-carrier effects so that, without sacrificing product performance, degradation can be kept to a minimum and a reli able design obtained. To accomplish this, the physical mechanisms re sponsible for the degradations should first be experimentally identified and characterized. With adequate models thus obtained, steps can be taken to optimize the design, so that an adequate level of quality assur ance in device or circuit performance can be achieved. This book ad dresses these hot-carrier design issues for MOS devices and circuits, and is used primarily as a professional guide for process development engi neers, device engineers, and circuit designers who are interested in the latest developments in hot-carrier degradation modeling and hot-carrier reliability design techniques. It may also be considered as a reference book for graduate students who have some research interests in this excit ing, yet sometime controversial, field.

Hot-Carrier Reliability of MOS VLSI Circuits
Hot-Carrier Reliability of MOS VLSI Circuits

Author: Yusuf Leblebici

Publisher: Springer Science & Business Media

Published: 2012-12-06

Total Pages: 223

ISBN-13: 1461532507

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As the complexity and the density of VLSI chips increase with shrinking design rules, the evaluation of long-term reliability of MOS VLSI circuits is becoming an important problem. The assessment and improvement of reliability on the circuit level should be based on both the failure mode analysis and the basic understanding of the physical failure mechanisms observed in integrated circuits. Hot-carrier induced degrada tion of MOS transistor characteristics is one of the primary mechanisms affecting the long-term reliability of MOS VLSI circuits. It is likely to become even more important in future generation chips, since the down ward scaling of transistor dimensions without proportional scaling of the operating voltage aggravates this problem. A thorough understanding of the physical mechanisms leading to hot-carrier related degradation of MOS transistors is a prerequisite for accurate circuit reliability evaluation. It is also being recognized that important reliability concerns other than the post-manufacture reliability qualification need to be addressed rigorously early in the design phase. The development and use of accurate reliability simulation tools are therefore crucial for early assessment and improvement of circuit reliability : Once the long-term reliability of the circuit is estimated through simulation, the results can be compared with predetermined reliability specifications or limits. If the predicted reliability does not satisfy the requirements, appropriate design modifications may be carried out to improve the resistance of the devices to degradation.

Physical Limitations of Semiconductor Devices
Physical Limitations of Semiconductor Devices

Author: Vladislav A. Vashchenko

Publisher: Springer Science & Business Media

Published: 2008-03-22

Total Pages: 337

ISBN-13: 0387745149

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Providing an important link between the theoretical knowledge in the field of non-linier physics and practical application problems in microelectronics, the purpose of the book is popularization of the physical approach for reliability assurance. Another unique aspect of the book is the coverage given to the role of local structural defects, their mathematical description, and their impact on the reliability of the semiconductor devices.

Semiconductor Device Reliability
Semiconductor Device Reliability

Author: A. Christou

Publisher: Springer Science & Business Media

Published: 2012-12-06

Total Pages: 571

ISBN-13: 9400924828

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This publication is a compilation of papers presented at the Semiconductor Device Reliabi lity Workshop sponsored by the NATO International Scientific Exchange Program. The Workshop was held in Crete, Greece from June 4 to June 9, 1989. The objective of the Workshop was to review and to further explore advances in the field of semiconductor reliability through invited paper presentations and discussions. The technical emphasis was on quality assurance and reliability of optoelectronic and high speed semiconductor devices. The primary support for the meeting was provided by the Scientific Affairs Division of NATO. We are indebted to NATO for their support and to Dr. Craig Sinclair, who admin isters this program. The chapters of this book follow the format and order of the sessions of the meeting. Thirty-six papers were presented and discussed during the five-day Workshop. In addi tion, two panel sessions were held, with audience participation, where the particularly controversial topics of bum-in and reliability modeling and prediction methods were dis cussed. A brief review of these sessions is presented in this book.

Semiconductor Devices
Semiconductor Devices

Author: Amal Banerjee

Publisher: Springer Nature

Published: 2023-10-16

Total Pages: 305

ISBN-13: 3031457501

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This book examines in detail how a semiconductor device is designed and fabricated to satisfy best the requirements of the target application. The author presents and explains both basic and state-of-art semiconductor industry standards used in large/small signal equivalent circuit models for semiconductor devices that electronics engineers routinely use in their design calculations. The presentation includes detailed, step-by-step information on how a semiconductor device is fabricated, and the very sophisticated supporting technologies used in the process flow. The author also explains how standard laboratory equipment can be used to extract useful performance metrics of a semiconductor device.

Analysis and Simulation of Semiconductor Devices
Analysis and Simulation of Semiconductor Devices

Author: S. Selberherr

Publisher: Springer Science & Business Media

Published: 2012-12-06

Total Pages: 308

ISBN-13: 3709187524

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The invention of semiconductor devices is a fairly recent one, considering classical time scales in human life. The bipolar transistor was announced in 1947, and the MOS transistor, in a practically usable manner, was demonstrated in 1960. From these beginnings the semiconductor device field has grown rapidly. The first integrated circuits, which contained just a few devices, became commercially available in the early 1960s. Immediately thereafter an evolution has taken place so that today, less than 25 years later, the manufacture of integrated circuits with over 400.000 devices per single chip is possible. Coincident with the growth in semiconductor device development, the literature concerning semiconductor device and technology issues has literally exploded. In the last decade about 50.000 papers have been published on these subjects. The advent of so called Very-Large-Scale-Integration (VLSI) has certainly revealed the need for a better understanding of basic device behavior. The miniaturization of the single transistor, which is the major prerequisite for VLSI, nearly led to a breakdown of the classical models of semiconductor devices.

Hot-Carrier Effects in MOS Devices
Hot-Carrier Effects in MOS Devices

Author: Eiji Takeda

Publisher: Elsevier

Published: 1995-11-28

Total Pages: 329

ISBN-13: 0080926223

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The exploding number of uses for ultrafast, ultrasmall integrated circuits has increased the importance of hot-carrier effects in manufacturing as well as for other technological applications. They are rapidly movingout of the research lab and into the real world. This book is derived from Dr. Takedas book in Japanese, Hot-Carrier Effects, (published in 1987 by Nikkei Business Publishers). However, the new book is much more than a translation. Takedas original work was a starting point for developing this much more complete and fundamental text on this increasingly important topic. The new work encompasses not only all the latest research and discoveries made in the fast-paced area of hot carriers, but also includes the basics of MOS devices, and the practical considerations related to hot carriers. - Chapter one itself is a comprehensive review of MOS device physics which allows a reader with little background in MOS devices to pick up a sufficient amount of information to be able to follow the rest of the book - The book is written to allow the reader to learn about MOS Device Reliability in a relatively short amount of time, making the texts detailed treatment of hot-carrier effects especially useful and instructive to both researchers and others with varyingamounts of experience in the field - The logical organization of the book begins by discussing known principles, then progresses to empirical information and, finally, to practical solutions - Provides the most complete review of device degradation mechanisms as well as drain engineering methods - Contains the most extensive reference list on the subject

Reliability and Physics-of-Healthy in Mechatronics
Reliability and Physics-of-Healthy in Mechatronics

Author: Abdelkhalak El Hami

Publisher: John Wiley & Sons

Published: 2023-01-12

Total Pages: 324

ISBN-13: 1786308819

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This book illustrates simply, but with many details, the state of the art of reliability science, exploring clear reliability disciplines and applications through concrete examples from their industries and from real life, based on industrial experiences. Many experts believe that reliability is not only a matter of statistics but is a multidisciplinary scientific topic, involving materials, tests, simulations, quality tools, manufacturing, electronics, mechatronics, environmental engineering and Big Data, among others. For a complex mechatronic system, failure risks have to be identified at an early stage of the design. In the automotive and aeronautic industries, fatigue simulation is used both widely and efficiently. Problems arise from the variability of inputs such as fatigue parameters and life curves. This book aims to discuss probabilistic fatigue and reliability simulation. To do this, Reliability and Physics-of-Healthy in Mechatronics provides a study on some concepts of a predictive reliability model of microelectronics, with examples from the automotive, aeronautic and space industries, based on entropy and Physics-of-Healthy

Transport of Information-Carriers in Semiconductors and Nanodevices
Transport of Information-Carriers in Semiconductors and Nanodevices

Author: El-Saba, Muhammad

Publisher: IGI Global

Published: 2017-03-31

Total Pages: 690

ISBN-13: 1522523138

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Rapid developments in technology have led to enhanced electronic systems and applications. When utilized correctly, these can have significant impacts on communication and computer systems. Transport of Information-Carriers in Semiconductors and Nanodevices is an innovative source of academic material on transport modelling in semiconductor material and nanoscale devices. Including a range of perspectives on relevant topics such as charge carriers, semiclassical transport theory, and organic semiconductors, this is an ideal publication for engineers, researchers, academics, professionals, and practitioners interested in emerging developments on transport equations that govern information carriers.