Handbook Series On Semiconductor Parameters, Vol. 1: Si, Ge, C (Diamond), Gaas, Gap, Gasb, Inas, Inp, Insb
Handbook Series On Semiconductor Parameters, Vol. 1: Si, Ge, C (Diamond), Gaas, Gap, Gasb, Inas, Inp, Insb

Author: Michael S Shur

Publisher: World Scientific

Published: 1996-11-22

Total Pages: 237

ISBN-13: 981450405X

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The Handbook Series on Semiconductor Parameters will consist of 5 volumes and will include data on the most popular semiconductor materials. These volumes aim to be a basic reference for scientists, engineers, students and technicians working in semiconductor materials and devices. The books have been kept compact but comprehensive and contain the values of frequently needed parameters selected and commented by leading experts on these materials. The first volume will include data on Si, Ge, diamond, GaAs, GaP, GaSb, InAs, InP, and InSb.

Handbook Series on Semiconductor Parameters
Handbook Series on Semiconductor Parameters

Author: M. Levinshtein

Publisher: World Scientific

Published: 1999

Total Pages: 224

ISBN-13: 9812832084

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The Handbook Series on Semiconductor Parameters will consist of 5 volumes and will include data on the most popular semiconductor materials. These volumes aim to be a basic reference for scientists, engineers, students and technicians working in semiconductor materials and devices. The books have been kept compact but comprehensive and contain the values of frequently needed parameters selected and commented by leading experts on these materials. The first volume will include data on Si, Ge, diamond, GaAs, GaP, GaSb, InAs, InP, and InSb.

Handbook Series on Semiconductor Parameters
Handbook Series on Semiconductor Parameters

Author: M. Levinshtein

Publisher: World Scientific

Published: 1997-05-01

Total Pages: 228

ISBN-13: 9789810214203

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The Handbook Series on Semiconductor Parameters will consist of 5 volumes and will include data on the most popular semiconductor materials. These volumes aim to be a basic reference for scientists, engineers, students and technicians working in semiconductor materials and devices. The books have been kept compact but comprehensive and contain the values of frequently needed parameters selected and commented by leading experts on these materials. The first volume will include data on Si, Ge, diamond, GaAs, GaP, GaSb, InAs, InP, and InSb

Handbook of Concentrator Photovoltaic Technology
Handbook of Concentrator Photovoltaic Technology

Author: Carlos Algora

Publisher: John Wiley & Sons

Published: 2016-05-31

Total Pages: 806

ISBN-13: 1118472969

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Concentrator Photovoltaics (CPV) is one of the most promising technologies to produce solar electricity at competitive prices. High performing CPV systems with efficiencies well over 30% and multi-megawatt CPV plants are now a reality. As a result of these achievements, the global CPV market is expected to grow dramatically over the next few years reaching cumulative installed capacity of 12.5 GW by 2020. In this context, both new and consolidated players are moving fast to gain a strategic advantage in this emerging market. Written with clear, brief and self-contained technical explanations, Handbook of Concentrator Photovoltaic Technology provides a complete overview of CPV covering: the fundamentals of solar radiation, solar cells, concentrator optics, modules and trackers; all aspects of characterization and reliability; case studies based on the description of actual systems and plants in the field; environmental impact, market potential and cost analysis. CPV technology is at a key point of expansion. This timely handbook aims to provide a comprehensive assessment of all CPV scientific, technological and engineering background with a view to equipping engineers and industry professionals with all of the vital information they need to help them sustain the impetus of this encouraging technology. Key features: Uniquely combines an explanation of the fundamentals of CPV systems and components with an overview of the market place and their real-life applications. Each chapter is written by well-known industry specialists with extensive expertise in each particular field of CPV technology. Reviews the basic concepts of multi-junction solar cells and new concepts for CPV cells, highlighting the key differences between them. Demonstrates the state of the art of several CPV centres and companies. Facilitates future cost calculation models for CPV. Features extensive case studies in each chapter, including coverage of CPV modules and systems.

Handbook for III-V High Electron Mobility Transistor Technologies
Handbook for III-V High Electron Mobility Transistor Technologies

Author: D. Nirmal

Publisher: CRC Press

Published: 2019-05-14

Total Pages: 443

ISBN-13: 0429862539

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This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT). Key Features Combines III-As/P/N HEMTs with reliability and current status in single volume Includes AC/DC modelling and (sub)millimeter wave devices with reliability analysis Covers all theoretical and experimental aspects of HEMTs Discusses AlGaN/GaN transistors Presents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots

Handbook Series on Semiconductor Parameters: Ternary and quaternary A3B5 semiconductors
Handbook Series on Semiconductor Parameters: Ternary and quaternary A3B5 semiconductors

Author: M. Levinshtein

Publisher: World Scientific

Published: 1996

Total Pages: 224

ISBN-13: 9810229356

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The Handbook Series on Semiconductor Parameters will consist of 5 volumes and will include data on the most popular semiconductor materials. These volumes aim to be a basic reference for scientists, engineers, students and technicians working in semiconductor materials and devices. The books have been kept compact but comprehensive and contain the values of frequently needed parameters selected and commented by leading experts on these materials. The first volume will include data on Si, Ge, diamond, GaAs, GaP, GaSb, InAs, InP, and InSb.

Handbook Series On Semiconductor Parameters, Vol. 2: Ternary And Quaternary Iii-v Compounds
Handbook Series On Semiconductor Parameters, Vol. 2: Ternary And Quaternary Iii-v Compounds

Author: Michael S Shur

Publisher: World Scientific

Published: 1996-11-22

Total Pages: 224

ISBN-13: 9814504068

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The Handbook Series on Semiconductor Parameters will consist of 5 volumes and will include data on the most popular semiconductor materials. These volumes aim to be a basic reference for scientists, engineers, students and technicians working in semiconductor materials and devices. The books have been kept compact but comprehensive and contain the values of frequently needed parameters selected and commented by leading experts on these materials. The first volume will include data on Si, Ge, diamond, GaAs, GaP, GaSb, InAs, InP, and InSb.

Single Crystals of Electronic Materials
Single Crystals of Electronic Materials

Author: Roberto Fornari

Publisher: Woodhead Publishing

Published: 2018-09-18

Total Pages: 596

ISBN-13: 008102097X

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Single Crystals of Electronic Materials: Growth and Properties is a complete overview of the state-of-the-art growth of bulk semiconductors. It is not only a valuable update on the body of information on crystal growth of well-established electronic materials, such as silicon, III-V, II-VI and IV-VI semiconductors, but also includes chapters on novel semiconductors, such as wide bandgap oxides like ZnO, Ga2, O3, In2, O3, Al2, O3, nitrides (AIN and GaN), and diamond. Each chapter focuses on a specific material, providing a comprehensive overview that includes applications and requirements, thermodynamic properties, schematics of growth methods, and more. - Presents the latest research and most comprehensive overview of both standard and novel semiconductors - Provides a systematic examination of important electronic materials, including their applications, growth methods, properties, technologies and defect and doping issues - Takes a close look at emerging materials, including wide bandgap oxides, nitrides and diamond

Top-Down Digital VLSI Design
Top-Down Digital VLSI Design

Author: Hubert Kaeslin

Publisher: Morgan Kaufmann

Published: 2014-12-07

Total Pages: 599

ISBN-13: 0128007729

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Top-Down VLSI Design: From Architectures to Gate-Level Circuits and FPGAs represents a unique approach to learning digital design. Developed from more than 20 years teaching circuit design, Doctor Kaeslin's approach follows the natural VLSI design flow and makes circuit design accessible for professionals with a background in systems engineering or digital signal processing. It begins with hardware architecture and promotes a system-level view, first considering the type of intended application and letting that guide your design choices. Doctor Kaeslin presents modern considerations for handling circuit complexity, throughput, and energy efficiency while preserving functionality. The book focuses on application-specific integrated circuits (ASICs), which along with FPGAs are increasingly used to develop products with applications in telecommunications, IT security, biomedical, automotive, and computer vision industries. Topics include field-programmable logic, algorithms, verification, modeling hardware, synchronous clocking, and more. - Demonstrates a top-down approach to digital VLSI design. - Provides a systematic overview of architecture optimization techniques. - Features a chapter on field-programmable logic devices, their technologies and architectures. - Includes checklists, hints, and warnings for various design situations. - Emphasizes design flows that do not overlook important action items and which include alternative options when planning the development of microelectronic circuits.

Principles of Radiation Interaction in Matter and Detection (4th Edition)
Principles of Radiation Interaction in Matter and Detection (4th Edition)

Author: Claude Leroy

Publisher: World Scientific

Published: 2015-12-17

Total Pages: 1345

ISBN-13: 9814603198

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"The fourth edition of this book has been widely revised. It includes additional chapters and some sections are complemented with either new ones or an extension of their content. In this latest edition a complete treatment of the physics and properties of semiconductors is presented, covering transport phenomena in semiconductors, scattering mechanisms, radiation effects and displacement damages. Furthermore, this edition presents a comprehensive treatment of the Coulomb scattering on screened nuclear potentials resulting from electrons, protons, light- and heavy-ions -- ranging from (very) low up to ultra-relativistic kinetic energies -- and allowing one to derive the corresponding NIEL (non-ionizing energy-loss) doses deposited in any material. The contents are organized into two parts: Chapters 1 to 7 cover Particle Interactions and Displacement Damage while the remaining chapters focus on Radiation Environments and Particle Detection. This book can serve as reference for graduate students and final-year undergraduates and also as supplement for courses in particle, astroparticle, space physics and instrumentation. A section of the book is directed toward courses in medical physics. Researchers in experimental particle physics at low, medium, and high energy who are dealing with instrumentation will also find the book useful."--