Growth of Manganese Oxide Thin Films by Pulsed Laser Deposition
Author: Elissar Suheil Majdalani
Publisher:
Published: 2006
Total Pages: 182
ISBN-13:
DOWNLOAD EBOOKA KrF excimer laser is used to ablate a pure MnO target to grow manganese oxide thin films on Si (111) substrates. The effect of oxygen pressure and substrate t emperature on the various film properties were investigated. Grazing incidence X -ray diffraction (GIXRD) is employed to determine the crystalline structure, whe reas Atomic Force Microscopy (AFM) is used to determine the surface roughness. C hemical bonding and the elemental composition were studied using Fourier Transfo rm Infrared Spectroscopy (FTIR) and Rutherford Backscattering Spectroscopy (RBS) . Two manganese oxide phases were obtained, namely Manganesetrioxide (Mn2O3) and M anganesetetraoxide (Mn3O4). GIXRD analysis indicates that the increase in substr ate temperature at a constant oxygen pressure leads to a change in the phase com position from Manganesetrioxide (Mn2O3) to Manganesetetraoxide (Mn3O4). FTIR stu dies support this result. The FWHM measurements reveal that the films become mor e crystalline at higher temperatures. Moreover, AFM measurements show that the f ilm roughness increases with the increase in temperature due to the fact that su rface atoms mobility is enhanced at higher temperatures. At constant temperature ; however, it was shown by both GIXRD and FTIR that varying the oxygen pressure does not affect the composition and crystallinity of the films. On the other han d, it has a considerable effect on the atomic ration of oxygen-to manganese obta ined by RBS.