GaN and Related Materials
GaN and Related Materials

Author: Stephen J. Pearton

Publisher: CRC Press

Published: 2021-10-08

Total Pages: 456

ISBN-13: 1000445690

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Presents views on current developments in heat and mass transfer research related to the modern development of heat exchangers. Devotes special attention to the different modes of heat and mass transfer mechanisms in relation to the new development of heat exchangers design. Dedicates particular attention to the future needs and demands for further development in heat and mass transfer. GaN and related materials are attracting tremendous interest for their applications to high-density optical data storage, blue/green diode lasers and LEDs, high-temperature electronics for high-power microwave applications, electronics for aerospace and automobiles, and stable passivation films for semiconductors. In addition, there is great scientific interest in the nitrides, because they appear to form the first semiconductor system in which extended defects do not severely affect the optical properties of devices. This series provides a forum for the latest research in this rapidly-changing field, offering readers a basic understanding of new developments in recent research. Series volumes feature a balance between original theoretical and experimental research in basic physics, device physics, novel materials and quantum structures, processing, and systems.

Gallium Nitride Processing for Electronics, Sensors and Spintronics
Gallium Nitride Processing for Electronics, Sensors and Spintronics

Author: Stephen J. Pearton

Publisher: Springer Science & Business Media

Published: 2006-07-06

Total Pages: 383

ISBN-13: 1846283590

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Semiconductor spintronics is expected to lead to a new generation of transistors, lasers and integrated magnetic sensors that can be used to create ultra-low power, high speed memory, logic and photonic devices. Useful spintronic devices will need materials with practical magnetic ordering temperatures and current research points to gallium and aluminium nitride magnetic superconductors as having great potential. This book details current research into the properties of III-nitride semiconductors and their usefulness in novel devices such as spin-polarized light emitters, spin field effect transistors, integrated sensors and high temperature electronics. Written by three leading researchers in nitride semiconductors, the book provides an excellent introduction to gallium nitride technology and will be of interest to all reseachers and industrial practitioners wishing to keep up to date with developments that may lead to the next generation of transistors, lasers and integrated magnetic sensors.

Gallium Nitride Electronics
Gallium Nitride Electronics

Author: Rüdiger Quay

Publisher: Springer Science & Business Media

Published: 2008-04-05

Total Pages: 492

ISBN-13: 3540718923

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This book is based on nearly a decade of materials and electronics research at the leading research institution on the nitride topic in Europe. It is a comprehensive monograph and tutorial that will be of interest to graduate students of electrical engineering, communication engineering, and physics; to materials, device, and circuit engineers in research and industry; to all scientists with a general interest in advanced electronics.

Gallium Nitride
Gallium Nitride

Author: Kiera Olivia Peak

Publisher: Nova Science Publishers

Published: 2014

Total Pages: 0

ISBN-13: 9781633213876

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Gallium nitride (GaN), a member of the family of III-V semiconductor compounds, has been investigated intensively and have found extensive applications. Recent development has suggested that GaN may be used as an excellent host material for light-emitting devices (LEDs) that operate in the blue and ultraviolet region, due to its wide and direct band gap. Nano-materials often present novel properties that are different from the corresponding bulk materials due to their unique structures, high specific surface area and quantum confinement effects. This book discusses several topics on the structure, thermal properties and applications of GaN. Some of these topics include the effects of radiation damage in GaN and and related materials; low-dimensional GaN; structural and dielectric properties of the GaN and silica nanoparticles investigated by molecular dynamics; and GaN bulk and nanostructures for spintronic application.

GaN-based Materials and Devices
GaN-based Materials and Devices

Author: Michael Shur

Publisher: World Scientific

Published: 2004

Total Pages: 310

ISBN-13: 9789812562364

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The unique materials properties of GaN-based semiconductors havestimulated a great deal of interest in research and developmentregarding nitride materials growth and optoelectronic andnitride-based electronic devices. High electron mobility andsaturation velocity, high sheet carrier concentration atheterojunction interfaces, high breakdown field, and low thermalimpedance of GaN-based films grown over SiC or bulk AlN substratesmake nitride-based electronic devices very promising.

Gallium Nitride and Related Wide Bandgap Materials and Devices
Gallium Nitride and Related Wide Bandgap Materials and Devices

Author: R. Szweda

Publisher: Elsevier

Published: 2000-07-07

Total Pages: 459

ISBN-13: 0080532306

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The second edition of Gallium Nitride & Related Wide Bandgap Materials and Devices provides a detailed insight into the global developments in GaN, SiC and other optoelectronic materials. This report also examines the implication for both suppliers and users of GaN technology. For a PDF version of the report please call Tina Enright on +44 (0) 1865 843008 for price details.

Optoelectronic Devices
Optoelectronic Devices

Author: M Razeghi

Publisher: Elsevier

Published: 2004

Total Pages: 602

ISBN-13: 9780080444260

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Tremendous progress has been made in the last few years in the growth, doping and processing technologies of the wide bandgap semiconductors. As a result, this class of materials now holds significant promis for semiconductor electronics in a broad range of applications. The principal driver for the current revival of interest in III-V Nitrides is their potential use in high power, high temperature, high frequency and optical devices resistant to radiation damage. This book provides a wide number of optoelectronic applications of III-V nitrides and covers the entire process from growth to devices and applications making it essential reading for those working in the semiconductors or microelectronics. Broad review of optoelectronic applications of III-V nitrides

Technology of Gallium Nitride Crystal Growth
Technology of Gallium Nitride Crystal Growth

Author: Dirk Ehrentraut

Publisher: Springer Science & Business Media

Published: 2010-06-14

Total Pages: 337

ISBN-13: 3642048307

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This book discusses the important technological aspects of the growth of GaN single crystals by HVPE, MOCVD, ammonothermal and flux methods for the purpose of free-standing GaN wafer production.

Gallium Nitride and Related Materials: Volume 395
Gallium Nitride and Related Materials: Volume 395

Author: F. A. Ponce

Publisher:

Published: 1996-09-04

Total Pages: 1008

ISBN-13:

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This book reflects the excitement in the scientific community about III-V nitrides. Based on papers presented at the First International Symposium on Gallium Nitride and Related Materials (ISGN-1), it reveals the large amount of work that has taken place since the field exploded with the announcement of commercial blue-light-emitting devices. The compound semiconductors in the III-V nitride systems are of increasing interest for high-performance optoelectronic and electronic device applications. These wide-bandgap semiconductor materials are also of great fundamental scientific interest because of their unique structural, electrical and optical properties. From the advances in the technologies for the heteroepitaxial growth of these materials, leading to improved quality and device performance, it is expected that III-V nitrides will soon be of significant practical and commercial interest. Topics include: crystal growth - substrates and early stages; molecular beam growth techniques; chemical vapor phase and alloys and novel growth techniques; structural properties; electronic properties; optical properties; point defects; hydrogen, etching and other materials processes; surfaces and metal contacts and devices.