Gallium Arsenide and Related Compounds 1992, Proceedings of the 19th INT Symposium, 28 September-2 October 1992, Karuizawa, Japan
Gallium Arsenide and Related Compounds 1992, Proceedings of the 19th INT Symposium, 28 September-2 October 1992, Karuizawa, Japan

Author: Ikegami

Publisher: CRC Press

Published: 1993-01-01

Total Pages: 1002

ISBN-13: 9780750302500

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Bringing together international experts from 16 countries, Gallium Arsenide and Related Compounds 1992 focuses on device applications for Gallium Arsenide and related compounds. A topic of importance discussed is the first GaAs supercomputer from Fujitsu. The book also explores carbon doping and device applications in laser diodes, light modulators, and amplifiers, emphasizing business opportunity in consumer applications such as personal communications and TV tuners. It includes an account of the use of scanning tunneling microscopies in GaAs and related compounds. This book is ideal for physicists, materials scientists, and electronics and electrical engineers involved in III-V compound research.

Gallium Arsenide and Related Compounds 1991, Proceedings of the Eighteenth INT Symposium, 9-12 September 1991, Seattle, USA
Gallium Arsenide and Related Compounds 1991, Proceedings of the Eighteenth INT Symposium, 9-12 September 1991, Seattle, USA

Author: Gerald B. Stringfellow

Publisher: CRC Press

Published: 2020-11-26

Total Pages: 696

ISBN-13: 1000157067

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Gallium Arsenide and Related Compounds 1991emphasizes current results on the materials, characterization, and device aspects of a broad range of semiconductor materials, particularly the III-V compounds and alloys. The book is a valuable reference for researchers in physics, materials science, and electronics and electrical engineering who work on III-V compounds.

Gallium Arsenide and Related Compounds 1993, Proceedings of the 20th INT Symposium, 29 August - 2 September 1993, Freiburg im Braunschweig, Germany
Gallium Arsenide and Related Compounds 1993, Proceedings of the 20th INT Symposium, 29 August - 2 September 1993, Freiburg im Braunschweig, Germany

Author: Günter Weimann

Publisher: CRC Press

Published: 1994-01-01

Total Pages: 880

ISBN-13: 9780750302951

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Gallium Arsenide and Related Compounds 1993 covers III-V compounds from crystal growth of materials to their device applications. Focusing on the fields of optical communications and satellite broadcasting, the book describes the practical applications for GaAs and III-V compounds in devices and circuits, both conventional and those based on quantum effects. It also discusses ultrafast GaAs transistors and integrated circuits, novel laser diodes, and tunneling devices, and considers the direction for future technologies. In addition, this volume addresses the increasing demands of ultra high speed systems that require careful selection of III-V materials to optimize the performance of electronic and optoelectronic components. It is ideal reading for physicists, materials scientists, electrical, and electronics engineers investigating III-V compound materials, properties, and devices.

The MOCVD Challenge
The MOCVD Challenge

Author: Manijeh Razeghi

Publisher: CRC Press

Published: 1995-01-01

Total Pages: 460

ISBN-13: 1482289385

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The MOCVD Challenge: Volume 2, A Survey of GaInAsP-GaAs for Photonic and Electronic Device Applications focuses on GaAs systems and devices grown by MOCVD, specifically MOCVD growth of GaAs and related alloys and GaInP for photonic and electronic applications. Along with Volume 1, this book provides a personal account of the author's own pioneering

Heterostructures and Quantum Devices
Heterostructures and Quantum Devices

Author: Norman G. Einspruch

Publisher: Elsevier

Published: 2014-06-28

Total Pages: 465

ISBN-13: 1483295176

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Heterostructure and quantum-mechanical devices promise significant improvement in the performance of electronic and optoelectronic integrated circuits (ICs). Though these devices are the subject of a vigorous research effort, the current literature is often either highly technical or narrowly focused. This book presents heterostructure and quantum devices to the nonspecialist, especially electrical engineers working with high-performance semiconductor devices. It focuses on a broad base of technical applications using semiconductor physics theory to develop the next generation of electrical engineering devices. The text covers existing technologies and future possibilities within a common framework of high-performance devices, which will have a more immediate impact on advanced semiconductor physics-particularly quantum effects-and will thus form the basis for longer-term technology development.