Fundamentals Of Nanotransistors
Fundamentals Of Nanotransistors

Author: Mark S Lundstrom

Publisher: World Scientific Publishing Company

Published: 2017-07-11

Total Pages: 389

ISBN-13: 981457175X

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The transistor is the key enabler of modern electronics. Progress in transistor scaling has pushed channel lengths to the nanometer regime where traditional approaches to device physics are less and less suitable. These lectures describe a way of understanding MOSFETs and other transistors that is much more suitable than traditional approaches when the critical dimensions are measured in nanometers. It uses a novel, “bottom-up approach” that agrees with traditional methods when devices are large, but that also works for nano-devices. Surprisingly, the final result looks much like the traditional, textbook, transistor models, but the parameters in the equations have simple, clear interpretations at the nanoscale. The objective is to provide readers with an understanding of the essential physics of nanoscale transistors as well as some of the practical technological considerations and fundamental limits. This book is written in a way that is broadly accessible to students with only a very basic knowledge of semiconductor physics and electronic circuits.

Fundamentals of Nanotransistors
Fundamentals of Nanotransistors

Author: Mark Lundstrom

Publisher: World Scientific Publishing Company Incorporated

Published: 2018

Total Pages: 342

ISBN-13: 9789814571722

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The transistor is the key enabler of modern electronics. Progress in transistor scaling has pushed channel lengths to the nanometer regime where traditional approaches to device physics are less and less suitable. These lectures describe a way of understanding MOSFETs and other transistors that is much more suitable than traditional approaches when the critical dimensions are measured in nanometers. It uses a novel, "bottom-up approach" that agrees with traditional methods when devices are large, but that also works for nano-devices. Surprisingly, the final result looks much like the traditional, textbook, transistor models, but the parameters in the equations have simple, clear interpretations at the nanoscale. The objective is to provide readers with an understanding of the essential physics of nanoscale transistors as well as some of the practical technological considerations and fundamental limits. This book is written in a way that is broadly accessible to students with only a very basic knowledge of semiconductor physics and electronic circuits.

Nanoscale Transistors
Nanoscale Transistors

Author: Mark Lundstrom

Publisher: Springer Science & Business Media

Published: 2006-06-18

Total Pages: 223

ISBN-13: 0387280030

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To push MOSFETs to their scaling limits and to explore devices that may complement or even replace them at molecular scale, a clear understanding of device physics at nanometer scale is necessary. Nanoscale Transistors provides a description on the recent development of theory, modeling, and simulation of nanotransistors for electrical engineers, physicists, and chemists working on nanoscale devices. Simple physical pictures and semi-analytical models, which were validated by detailed numerical simulations, are provided for both evolutionary and revolutionary nanotransistors. After basic concepts are reviewed, the text summarizes the essentials of traditional semiconductor devices, digital circuits, and systems to supply a baseline against which new devices can be assessed. A nontraditional view of the MOSFET using concepts that are valid at nanoscale is developed and then applied to nanotube FET as an example of how to extend the concepts to revolutionary nanotransistors. This practical guide then explore the limits of devices by discussing conduction in single molecules

Fundamentals and Applications of Nano Silicon in Plasmonics and Fullerines
Fundamentals and Applications of Nano Silicon in Plasmonics and Fullerines

Author: Munir H. Nayfeh

Publisher: Elsevier

Published: 2018-06-29

Total Pages: 604

ISBN-13: 0323480586

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Fundamentals and Applications of Nano Silicon in Plasmonics and Fullerines: Current and Future Trends addresses current and future trends in the application and commercialization of nanosilicon. The book presents current, innovative and prospective applications and products based on nanosilicon and their binary system in the fields of energy harvesting and storage, lighting (solar cells and nano-capacitor and fuel cell devices and nanoLEDs), electronics (nanotransistors and nanomemory, quantum computing, photodetectors for space applications; biomedicine (substance detection, plasmonic treatment of disease, skin and hair care, implantable glucose sensor, capsules for drug delivery and underground water and oil exploration), and art (glass and pottery). Moreover, the book includes material on the use of advanced laser and proximal probes for imaging and manipulation of nanoparticles and atoms. In addition, coverage is given to carbon and how it contrasts and integrates with silicon with additional related applications. This is a valuable resource to all those seeking to learn more about the commercialization of nanosilicon, and to researchers wanting to learn more about emerging nanosilicon applications. Features a variety of designs and operation of nano-devices, helping engineers to make the best use of nanosilicon Contains underlying principles of how nanomaterials work and the variety of applications they provide, giving those new to nanosilicon a fundamental understanding Assesses the viability of various nanoslicon devices for mass production and commercialization, thereby providing an important source of information for engineers

Near-equilibrium Transport: Fundamentals And Applications
Near-equilibrium Transport: Fundamentals And Applications

Author: Mark S Lundstrom

Publisher: World Scientific Publishing Company

Published: 2012-11-29

Total Pages: 250

ISBN-13: 9814452246

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These lectures are designed to introduce students to the fundamentals of carrier transport in nano-devices using a novel, “bottom up approach” that agrees with traditional methods when devices are large, but which also works for nano-devices. The goal is to help students learn how to think about carrier transport at the nanoscale and also how the bottom up approach provides a new perspective to traditional concepts like mobility and drift-diffusion equations. The lectures are designed for engineers and scientists and others who need a working knowledge of near-equilibrium (“low-field” or “linear”) transport. Applications of the theory and measurement considerations are also addressed. The lectures serve as a starting point to an extensive set of instructional materials available online.

Fundamentals Of Electronic Materials And Devices: A Gentle Introduction To The Quantum-classical World
Fundamentals Of Electronic Materials And Devices: A Gentle Introduction To The Quantum-classical World

Author: Avik Ghosh

Publisher: World Scientific

Published: 2023-02-02

Total Pages: 349

ISBN-13: 9811265976

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The Romans built enduring bridges well before Newton came along, armed simply with a working knowledge of mechanics and materials. In contrast, today's bridge building is an elaborate enterprise involving CAD tools, composite materials and acoustic imaging. When technology is pushed to its limits, a working knowledge proves inadequate, and an in-depth understanding of core physical principles, both macroscopic and microscopic, top-down vs bottom-up, becomes essential.We find ourselves today at a similar crossroad in semiconductor device technology, where a working knowledge of solid state electronics is no longer enough. Faced with the prohibitive cost of computing and the slowdown of chip manufacturing, device scaling and the global supply chain, the semiconductor industry is forced to explore alternate platforms such as 2-D materials, spintronics, analog processing and quantum engineering.This book combines top-down classical device physics with bottom-up quantum transport in a single venue to provide the basis for such a scientific exploration. It is essential, easy reading for beginning undergraduate and practicing graduate students, physicists unfamiliar with device engineering and engineers untrained in quantum physics. With just a modest pre-requisite of freshman maths, the book works quickly through key concepts in quantum physics, Matlab exercises and original homeworks, to cover a wide range of topics from chemical bonding to Hofstader butterflies, domain walls to Chern insulators, solar cells to photodiodes, FinFETs to Majorana fermions. For the practicing device engineer, it provides new concepts such as the quantum of resistance, while for the practicing quantum physicist, it provides new contexts such as the tunnel transistor.

Nano- and Micro-Electromechanical Systems
Nano- and Micro-Electromechanical Systems

Author: Sergey Edward Lyshevski

Publisher: CRC Press

Published: 2000-09-28

Total Pages: 356

ISBN-13: 9780849309168

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Society is approaching and advancing nano- and microtechnology from various angles of science and engineering. The need for further fundamental, applied, and experimental research is matched by the demand for quality references that capture the multidisciplinary and multifaceted nature of the science. Presenting cutting-edge information that is applicable to many fields, Nano- and Micro-Electromechanical Systems: Fundamentals of Nano and Microengineering, Second Edition builds the theoretical foundation for understanding, modeling, controlling, simulating, and designing nano- and microsystems. The book focuses on the fundamentals of nano- and microengineering and nano- and microtechnology. It emphasizes the multidisciplinary principles of NEMS and MEMS and practical applications of the basic theory in engineering practice and technology development. Significantly revised to reflect both fundamental and technological aspects, this second edition introduces the concepts, methods, techniques, and technologies needed to solve a wide variety of problems related to high-performance nano- and microsystems. The book is written in a textbook style and now includes homework problems, examples, and reference lists in every chapter, as well as a separate solutions manual. It is designed to satisfy the growing demands of undergraduate and graduate students, researchers, and professionals in the fields of nano- and microengineering, and to enable them to contribute to the nanotechnology revolution.

Fundamentals of Nanoelectronics
Fundamentals of Nanoelectronics

Author: George W. Hanson

Publisher: Prentice Hall

Published: 2008

Total Pages: 400

ISBN-13: 0131957082

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For undergraduate courses in nanoelectronics. This is the first actual nanoelectronics textbook for undergraduate engineering and applied sciences students. It provides an introduction to nanoelectronics, as well as a self-contained overview of the necessary physical concepts -- taking a fairly gentle but serious approach to a field that will be extremely important in the near future.

Advanced Nanoelectronics
Advanced Nanoelectronics

Author: Razali Ismail

Publisher: CRC Press

Published: 2018-09-03

Total Pages: 459

ISBN-13: 1351833073

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While theories based on classical physics have been very successful in helping experimentalists design microelectronic devices, new approaches based on quantum mechanics are required to accurately model nanoscale transistors and to predict their characteristics even before they are fabricated. Advanced Nanoelectronics provides research information on advanced nanoelectronics concepts, with a focus on modeling and simulation. Featuring contributions by researchers actively engaged in nanoelectronics research, it develops and applies analytical formulations to investigate nanoscale devices. The book begins by introducing the basic ideas related to quantum theory that are needed to better understand nanoscale structures found in nanoelectronics, including graphenes, carbon nanotubes, and quantum wells, dots, and wires. It goes on to highlight some of the key concepts required to understand nanotransistors. These concepts are then applied to the carbon nanotube field effect transistor (CNTFET). Several chapters cover graphene, an unzipped form of CNT that is the recently discovered allotrope of carbon that has gained a tremendous amount of scientific and technological interest. The book discusses the development of the graphene nanoribbon field effect transistor (GNRFET) and its use as a possible replacement to overcome the CNT chirality challenge. It also examines silicon nanowire (SiNW) as a new candidate for achieving the downscaling of devices. The text describes the modeling and fabrication of SiNW, including a new top-down fabrication technique. Strained technology, which changes the properties of device materials rather than changing the device geometry, is also discussed. The book ends with a look at the technical and economic challenges that face the commercialization of nanoelectronics and what universities, industries, and government can do to lower the barriers. A useful resource for professionals, researchers, and scientists, this work brings together state-of-the-art technical and scientific information on important topics in advanced nanoelectronics.