The material covered in this symposium focused on two distinct areas. The first was phase transformations induced by ion or electron bombardment, including amorphization and interface motion. The second was the behavior of solids during various forms of annealing and quenching ranging in duration from femtoseconds to hours, such as rapid solidification following pulsed laser melting and rapid thermal annealing. The overlap between these two areas consisted of topics such as motion of the crystal/amorphous interface during ion bombardment at elevated temperatures. The symposium revealed how these fields have matured over the last decade, and highlighted many new and several older, yet-unanswered questions that might be addressed in future research. Keywords: Phase transformations; Ion bombardment; Electron bombardment; Annealing; Quenching; Solidification; Interfaces.
Major Topics include: SOI(Silicon On Insulators); Technologies for Integrated Circuits; Fundamentals of Energy Beam Interactions with Solids; Applications of Energy Beams in Material and Device Processing; Device Applications of Rapid Thermal Processing; Fundamental Mechanisms; Transient Thermal Processing of Silicon; Defect Mechanisms and Crystallization of Semiconductor on Insulators; SOI Materials and Devices; Compound Semiconductors; and Metallic Alloys.