Flat Panel Display Materials II: Volume 424
Flat Panel Display Materials II: Volume 424

Author: Miltiadis K. Hatalis

Publisher:

Published: 1997-02-12

Total Pages: 544

ISBN-13:

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The proceedings of a symposium held April 1996, in San Francisco, California. The field is experiencing a rapid growth which currently is expanding from portable computer applications to include display applications for desktop computers and a wide array of consumer and industrial products. Seventy-six contributions are divided into six sections covering amorphous silicon thin-film transistor materials, polycrystalline silicon thin-film transistor materials, liquid crystal display materials, transparent conducting oxides, field emission display materials, and other emissive display materials. Annotation copyrighted by Book News, Inc., Portland, OR

Low-Dielectric Constant Materials II: Volume 443
Low-Dielectric Constant Materials II: Volume 443

Author: André Lagendijk

Publisher:

Published: 1997-08-19

Total Pages: 224

ISBN-13:

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Low-dielectric constant materials are needed to improve the performance and speed of future integrated circuits. In fact, the diversity of contributors to this book is testimony to the global significance of the topic to the future of semiconductor manufacturing. Presentations include those by semiconductor equipment manufacturers and chemical source suppliers, academia from six countries, four government laboratories and five major device manufacturers. Approaches to designing and implementing reduction in dielectric constant for intermetal dielectric materials are featured and range from the evolution of silicon dioxide to fluorinated silicate glass, to the use of inorganic/organic polymers and spin-on-material, to fluorinated diamond-like carbon and nanoporous silica. The book also addresses the practical aspects of the use of low-dielectric constant materials such as chemical mechanical polishing of these materials and optimization of wiring delays in devices utilizing low-k material.

Defects in Electronic Materials II: Volume 442
Defects in Electronic Materials II: Volume 442

Author: Jürgen Michel

Publisher:

Published: 1997-05-02

Total Pages: 744

ISBN-13:

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The pervasive role of defects in determining the thermal, mechanical, electrical, optical and magnetic properties of materials is significant as is the knowledge and operation of generation and control of defects in electronic materials. Developing novel semiconductor materials, however, requires new insights into the role of defects to achieve new properties. New experimental techniques must be developed to study defects in small structures. Research groups come together in this book from MRS to provide a vivid picture of the current problems, progress and methods in defect studies in electronic materials. Topics include new techniques in defect studies; processing induced defects, plasma-induced point defects; processing induced defects -defects and gate-oxide integrity; point defects and reaction; point defects and interactions in Si; impurity diffusion and hydrogen in Si; dislocations in group IV semiconductors; point defects and defect interactions in SiGe; point defects in III-V compounds; compensation and structural defects in III-V compounds and layers and structures.

Silicon
Silicon

Author: Paul Siffert

Publisher: Springer Science & Business Media

Published: 2013-03-09

Total Pages: 552

ISBN-13: 3662098970

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With topics ranging from epitaxy through lattice defects and doping to quantum computation, this book provides a personalized survey of the development and use of silicon, the basis for the revolutionary changes in our lives sometimes called "The Silicon Age." Beginning with the very first developments more than 50 years ago, this reports on all aspects of silicon and silicon technology up to its use in exciting new technologies, including a glance at possible future developments.

Interfacial Engineering for Optimized Properties: Volume 458
Interfacial Engineering for Optimized Properties: Volume 458

Author: Clyde L. Briant

Publisher:

Published: 1997-07-08

Total Pages: 546

ISBN-13:

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The study of interfaces is one of the oldest areas of research in materials science. The presence of grain boundaries in materials has long been recognized, as has its crucial role in determining mechanical properties. Another long-recognized concept is that the properties of a surface are quite different from those of the bulk. In recent years, researchers have been able to study these interfaces, both internal and external, with a detail not before possible. These advances have stemmed from the ability to obtain atomic resolution images of interfaces, to measure accurate chemical compositions of interfaces, and to model these interfaces and their properties. This volume goes a step further, beyond structural and chemical studies, to explore how all of this information can be used to engineer interfaces for improved properties and overall improved material performance. Significant attention is given to the crystallographic nature of grain boundaries and interfaces, and the relationship between this nature and the performance of a material. The versatility of electron back-scattering pattern analysis (EBSP) in solving a number of interface-related problems is also featured.