Read and Download eBook Full
Author: Edward R. Myers
Publisher:
Published: 1990-11-16
Total Pages: 376
ISBN-13:
DOWNLOAD EBOOKThe MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Author: O. Auciello
Publisher: Springer Science & Business Media
Published: 2012-12-06
Total Pages: 625
ISBN-13: 9401117276
DOWNLOAD EBOOKThe synthesis of multicomponent/multilayered superconducting, conducting, semiconducting and insulating thin films has become the subject of an intensive, worldwide, interdisciplinary research effort. The development of deposition-characterization techniques and the science and technology related to the synthesis of these films are critical for the successful evolution of this interdisciplinary field of research and the implementation of the new materials in a whole new generation of advanced microdevices. This book contains the lectures and contributed papers on various scientific and technological aspects of multicomponent and multilayered thin films presented at a NATO/ASI. Compared to other recent books on thin films, the distinctive character of this book is the interdisciplinary treatment of the various fields of research related to the different thin film materials mentioned above. The wide range of topics discussed in this book include vacuum-deposition techniques, synthesis-processing, characterization, and devices of multicomponent/multilayered oxide high temperature superconducting, ferroelectric, electro-optic, optical, metallic, silicide, and compound semiconductor thin films. The book presents an unusual intedisciplinary exchange of ideas between researchers with cross-disciplinary backgrounds and it will be useful to established investigators as well as postdoctoral and graduate students.
Author: Masanori Okuyama
Publisher: Springer Science & Business Media
Published: 2005-02-22
Total Pages: 272
ISBN-13: 9783540241638
DOWNLOAD EBOOKFerroelectric thin films continue to attract much attention due to their developing applications in memory devices, FeRAM, infrared sensors, piezoelectric sensors and actuators. This book, aimed at students, researchers and developers, gives detailed information about the basic properties of these materials and the associated device physics. The contributing authors are acknowledged experts in the field.
Author: Bruce Tuttle
Publisher:
Published: 1995-08-08
Total Pages: 658
ISBN-13:
DOWNLOAD EBOOKPapers from the fall 1994 symposium present research and developments from academia, government, organizations, and industry in ferroelectric thin films, organized in sections on characterization, layered structure ferroelectrics, photonic phenomena, process integration, dram thin film technology, solution deposition, and piezoelectric and IR thin film technology. Highlights include the first public technical disclosures of Y1 nonvolatile memory material. Annotation copyright by Book News, Inc., Portland, OR
Author: Carlos Paz de Araujo
Publisher: Taylor & Francis US
Published: 1996
Total Pages: 598
ISBN-13: 9782884491976
DOWNLOAD EBOOKThe impetus for the rapid development of thin film technology, relative to that of bulk materials, is its application to a variety of microelectronic products. Many of the characteristics of thin film ferroelectric materials are utilized in the development of these products - namely, their nonvolatile memory and piezoelectric, pyroelectric, and electro-optic properties. It is befitting, therefore, that the first of a set of three complementary books with the general title Integrated Ferroelectric Devices and Technologies focuses on the synthesis of thin film ferroelectric materials and their basic properties. Because it is a basic introduction to the chemistry, materials science, processing, and physics of the materials from which integrated ferroelectrics are made, newcomers to this field as well as veterans will find this book self-contained and invaluable in acquiring the diverse elements requisite to success in their work in this area. It is directed at electronic engineers and physicists as well as process and system engineers, ceramicists, and chemists involved in the research, design, development, manufacturing, and utilization of thin film ferroelectric materials.
Author:
Publisher:
Published: 2002
Total Pages: 456
ISBN-13:
DOWNLOAD EBOOKAuthor: Angus I. Kingon
Publisher:
Published: 1992
Total Pages: 616
ISBN-13: 9781558991378
DOWNLOAD EBOOKAuthor: Carlos Paz de Araujo
Publisher: Taylor & Francis
Published: 1996
Total Pages: 596
ISBN-13: 9782884491891
DOWNLOAD EBOOKThe impetus for the rapid development of thin film technology, relative to that of bulk materials, is its application to a variety of microelectronic products. Many of the characteristics of thin film ferroelectric materials are utilized in the development of these products - namely, their nonvolatile memory and piezoelectric, pyroelectric, and electro-optic properties. It is befitting, therefore, that the first of a set of three complementary books with the general title Integrated Ferroelectric Devices and Technologies focuses on the synthesis of thin film ferroelectric materials and their basic properties. Because it is a basic introduction to the chemistry, materials science, processing, and physics of the materials from which integrated ferroelectrics are made, newcomers to this field as well as veterans will find this book self-contained and invaluable in acquiring the diverse elements requisite to success in their work in this area. It is directed at electronic engineers and physicists as well as process and system engineers, ceramicists, and chemists involved in the research, design, development, manufacturing, and utilization of thin film ferroelectric materials.
Author: R. W. Schwartz
Publisher:
Published: 2000-08-17
Total Pages: 610
ISBN-13:
DOWNLOAD EBOOKThis book, the eighth in a popular series from MRS, features the latest technical information on ferroelectric thin films from an international mix of academia, industry and government organizations. Recent results for DRAM and FERAM devices, as well as enhancements in material performance for these applications, are presented. Significant advances in understanding leakage current, frequency dependence of the coercive field, hydrogen annealing effects, piezoelectric constants, and domain switching responses are highlighted. The development of ferroelectric thin films for piezoelectric applications are also reviewed, as are improved film-fabrication procedures including chemical vapor deposition and chemical solution deposition. Topics include: BST thin films and DRAM; integration and electrodes; Bi-based thin-film ferroelectrics; Pb-based thin-film ferroelectrics; fundamental properties of thin-film ferroelectrics; ferroelectric gate materials and devices; and piezoelectric, pyro-electric and capacitor devices and novel processing strategies.
Author: Seungbum Hong
Publisher: Springer Science & Business Media
Published: 2013-11-27
Total Pages: 294
ISBN-13: 1441990445
DOWNLOAD EBOOKThis book presents the recent advances in the field of nanoscale science and engineering of ferroelectric thin films. It comprises two main parts, i.e. electrical characterization in nanoscale ferroelectric capacitor, and nano domain manipulation and visualization in ferroelectric materials. Well known le'adingexperts both in relevant academia and industry over the world (U.S., Japan, Germany, Switzerland, Korea) were invited to contribute to each chapter. The first part under the title of electrical characterization in nanoscale ferroelectric capacitors starts with Chapter 1, "Testing and characterization of ferroelectric thin film capacitors," written by Dr. I. K. Yoo. The author provides a comprehensive review on basic concepts and terminologies of ferroelectric properties and their testing methods. This chapter also covers reliability issues in FeRAMs that are crucial for commercialization of high density memory products. In Chapter 2, "Size effects in ferroelectric film capacitors: role ofthe film thickness and capacitor size," Dr. I. Stolichnov discusses the size effects both in in-plane and out-of-plane dimensions of the ferroelectric thin film. The author successfully relates the electric performance and domain dynamics with proposed models of charge injection and stress induced phase transition. The author's findings present both a challenging problem and the clue to its solution of reliably predicting the switching properties for ultra-thin ferroelectric capacitors. In Chapter 3, "Ferroelectric thin films for memory applications: nanoscale characterization by scanning force microscopy," Prof. A.
