Fabrication and Characterization of Nanodevices Based on III-V Nanowires

Fabrication and Characterization of Nanodevices Based on III-V Nanowires

Author: Andrès de Luna bugallo

Publisher:

Published: 2012

Total Pages: 0

ISBN-13:

DOWNLOAD EBOOK

Semiconductor nanowires are nanostructures with lengths up to few microns and small cross sections (10ths of nanometers). In the recent years the development in the field of III-N nanowire technology has been spectacular. In particular they are consider as promising building in nanoscale electronics and optoelectronics devices; such as photodetectors, transistors, biosensors, light source, solar cells, etc. In this work, we present fabrication and the characterization of photodetector and light emitter based devices on III-N nanowires. First we present a study of a visible blind photodetector based on p-i-n GaN nanowires ensembles grown on Si (111). We show that these devices exhibit a high responsivity exceeding that of thin film counterparts. We also demonstrate UV photodetectors based on single nanowires containing GaN/AlN multi-axial quantum discs in the intrinsic region of the nanowires. Photoluminescence and cathodoluminescence spectroscopy show spectral contributions above and below the GaN bandgap according to the variation of the discs thickness. The photocurrent spectra show a sub-band-gap peak related to the interband absorption between the confined states in the large Qdiscs. Finally we present a study of photodetectors and light emitters based on radial InGaN/GaN MQW embedded in GaN wires. The wires used as photodetectors showed a contribution below the GaN bandgap. OBIC measurements demonstrate that, this signal is exclusively generated in the InGaN MQW region. We showed that LEDs based on this structure show a electroluminescence emission and a red shift when the In content present in the QWs increases which is in good agreement with photoluminescence and cathodoluminescence results.


Advances in III-V Semiconductor Nanowires and Nanodevices

Advances in III-V Semiconductor Nanowires and Nanodevices

Author: Jianye Li

Publisher: Bentham Science Publishers

Published: 2011-09-09

Total Pages: 186

ISBN-13: 1608050521

DOWNLOAD EBOOK

"Semiconductor nanowires exhibit novel electronic and optical properties due to their unique one-dimensional structure and quantum confinement effects. In particular, III-V semiconductor nanowires have been of great scientific and technological interest fo"


Semiconductor Nanowires

Semiconductor Nanowires

Author: J Arbiol

Publisher: Elsevier

Published: 2015-03-31

Total Pages: 573

ISBN-13: 1782422633

DOWNLOAD EBOOK

Semiconductor nanowires promise to provide the building blocks for a new generation of nanoscale electronic and optoelectronic devices. Semiconductor Nanowires: Materials, Synthesis, Characterization and Applications covers advanced materials for nanowires, the growth and synthesis of semiconductor nanowires—including methods such as solution growth, MOVPE, MBE, and self-organization. Characterizing the properties of semiconductor nanowires is covered in chapters describing studies using TEM, SPM, and Raman scattering. Applications of semiconductor nanowires are discussed in chapters focusing on solar cells, battery electrodes, sensors, optoelectronics and biology. Explores a selection of advanced materials for semiconductor nanowires Outlines key techniques for the property assessment and characterization of semiconductor nanowires Covers a broad range of applications across a number of fields


Dielectrics in Nanosystems -and- Graphene, Ge/III-V, Nanowires and Emerging Materials for Post-CMOS Applications 3

Dielectrics in Nanosystems -and- Graphene, Ge/III-V, Nanowires and Emerging Materials for Post-CMOS Applications 3

Author: Zia Karim

Publisher: The Electrochemical Society

Published: 2011-04-25

Total Pages: 546

ISBN-13: 1566778646

DOWNLOAD EBOOK

This issue of ECS Transactions will cover the following topics in (a) Graphene Material Properties, Preparation, Synthesis and Growth; (b) Metrology and Characterization of Graphene; (c) Graphene Devices and Integration; (d) Graphene Transport and mobility enhancement; (e) Thermal Behavior of Graphene and Graphene Based Devices; (f) Ge & III-V devices for CMOS mobility enhancement; (g) III.V Heterostructures on Si substrates; (h) Nano-wires devices and modeling; (i) Simulation of devices based on Ge, III-V, nano-wires and Graphene; (j) Nanotechnology applications in information technology, biotechnology and renewable energy (k) Beyond CMOS device structures and properties of semiconductor nano-devices such as nanowires; (l) Nanosystem fabrication and processing; (m) nanostructures in chemical and biological sensing system for healthcare and security; and (n) Characterization of nanosystems; (f) Nanosystem modeling.


Nanowires

Nanowires

Author: Paola Prete

Publisher: BoD – Books on Demand

Published: 2010-02-01

Total Pages: 430

ISBN-13: 9537619796

DOWNLOAD EBOOK

This volume is intended to orient the reader in the fast developing field of semiconductor nanowires, by providing a series of self-contained monographs focusing on various nanowire-related topics. Each monograph serves as a short review of previous results in the literature and description of methods used in the field, as well as a summary of the authors recent achievements on the subject. Each report provides a brief sketch of the historical background behind, the physical and/or chemical principles underlying a specific nanowire fabrication/characterization technique, or the experimental/theoretical methods used to study a given nanowire property or device. Despite the diverse topics covered, the volume does appear as a unit. The writing is generally clear and precise, and the numerous illustrations provide an easier understanding of the phenomena described. The volume contains 20 Chapters covering altogether many (although not all) semiconductors of technological interest, starting with the IV-IV group compounds (SiC and SiGe), carrying on with the binary and ternary compounds of the III-V (GaAs, AlGaAs, GaSb, InAs, GaP, InP, and GaN) and II-VI (HgTe, HgCdTe) families, the metal oxides (CuO, ZnO, ZnCoO, tungsten oxide, and PbTiO3), and finishing with Bi (a semimetal).


Fabrication and Characterization of Nanowires

Fabrication and Characterization of Nanowires

Author: Francis R. Phillips

Publisher:

Published: 2011

Total Pages:

ISBN-13:

DOWNLOAD EBOOK

The use of nanostructures has become very common throughout high-tech industries. In order to enhance the applicability of Shape Memory Alloys (SMAs) in systems such as Nano-Electromechanical Systems, the phase transformation behavior of SMA nanostructures should be explored. The primary focus of this work is on the fabrication of metallic nanowires and the characterization of the phase transformation of SMA nanowires. Various metallic nanowires are fabricated through the use of the mechanical pressure injection method. The mechanical pressure injection method is a template assisted nanowire fabrication method in which an anodized aluminum oxide (AAO) template is impregnated with liquid metal. The fabrication procedure of the AAO templates is analyzed in order to determine the effect of the various fabrication steps. Furthermore, metallic nanowires are embedded into polymeric nano bers as a means to incorporate nanowires within other nanostructures. The knowledge obtained through the analysis of the AAO template fabrication guides the fabrication of SMA nanowires of various diameters. The fabrication of SMA nanowires with di fferent diameters is accomplished through the fabrication of AAO templates of varying diameters. The phase transformation behavior of the fabricated SMA nanowires is characterized through transmission electron microscopy. By analyzing the fabricated SMA nanowires, it is found that none of the fabricated SMA nanowires exhibit a size eff ect on the phase transformation. The lack of a size e ffect on the phase transition of SMA nanowires is contrary to the results for SMA nanograins, nanocrystals, and thin films, which all exhibit a size eff ect on the phase transformation. The lack of a size eff ect is further studied through molecular dynamic simulations. These simulations show that free-standing metallic nanowires will exhibit a phase transformation when their diameters are sufficiently small. Furthermore, the application of a constraint on metallic nanowires will inhibit the phase transformation shown for unconstrained metallic nanowires. Therefore, it is concluded that free-standing SMA nanowires will exhibit a phase transformation throughout the nanoscale, but constrained SMA nanowires will reach a critical size below which the phase transformation is inhibited.


Fabrication and Characterization of Semiconductor Nanowires

Fabrication and Characterization of Semiconductor Nanowires

Author: Colm O'Regan

Publisher: LAP Lambert Academic Publishing

Published: 2016-01-15

Total Pages: 204

ISBN-13: 9783659694592

DOWNLOAD EBOOK

One-dimensional semiconductor nanowires are considered to be promising materials for future nanoelectronic applications. However, before these nanowires can be integrated into such devices, a thorough understanding of their growth behaviour is necessary. In particular, methods that allow the control over nanowire growth are deemed especially important, as it is these methods that will enable the control of nanowire dimensions such as length and diameter. The production of nanowires with high-aspect ratios is vital in order to take advantage of the unique properties experienced at the nanoscale, thus allowing us to maximise their use in next-generation electronics. Additionally, the development of low-resistivity interconnects is desirable in order to connect such nanowires in multi-nanowire components. Consequently, this book aims to discuss the synthesis and characterisation of semiconductor nanowires and metal interconnects, as they apply to future electronics applications.


Semiconductor Nanowires I: Growth and Theory

Semiconductor Nanowires I: Growth and Theory

Author:

Publisher: Academic Press

Published: 2015-11-26

Total Pages: 326

ISBN-13: 0128030445

DOWNLOAD EBOOK

Semiconductor Nanowires: Part A, Number 93 in the Semiconductor and Semimetals series, focuses on semiconductor nanowires. Contains comments from leading contributors in the field semiconductor nanowires Provides reviews of the most important recent literature Presents a broad view, including an examination of semiconductor nanowires Comprises up to date advancements in the technological development of nanowire devices and systems, and is comprehensive enough to be used as a reference book on nanowires as well as a graduate student text book


One-Dimensional Nanostructures

One-Dimensional Nanostructures

Author: Zhiming M Wang

Publisher: Springer Science & Business Media

Published: 2008-07-20

Total Pages: 335

ISBN-13: 0387741321

DOWNLOAD EBOOK

One-dimensional (1D) nanostructures, including nanowires, nanotubes and quantum wires, have been regarded as the most promising building blocks for nanoscale electronic and optoelectronic devices. This book presents exciting, state-of-the-art developments in synthesis and properties of 1D nanostructures with many kinds of morphologies and compositions as well as their considerable impact on spintronics, information storage, and the design of field-effect transistors.