Rapid Thermal Processing of Semiconductors

Rapid Thermal Processing of Semiconductors

Author: Victor E. Borisenko

Publisher: Springer Science & Business Media

Published: 2013-11-22

Total Pages: 374

ISBN-13: 1489918043

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Rapid thermal processing has contributed to the development of single wafer cluster processing tools and other innovations in integrated circuit manufacturing environments. Borisenko and Hesketh review theoretical and experimental progress in the field, discussing a wide range of materials, processes, and conditions. They thoroughly cover the work of international investigators in the field.


Laser Science and Technology

Laser Science and Technology

Author: A.N. Chester

Publisher: Springer Science & Business Media

Published: 2012-12-06

Total Pages: 449

ISBN-13: 1475703783

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The conference "Laser Science and Technology" was held May 11-19, 1987 in Erice, Sicily. This was the 12th conference organized by the Internatio nal School of Quantum Electronics, under the auspices of the "Ettore Majorana" Center for Scientific Culture. This volume contains both the in vited and contributed papers presented at the conference, covering current research work in two areas: new laser sources, and laser applications. The operation of the first laser by Dr. Theodore Maiman in 1960 initia ted a decade of scientific exploration of new laser sources. This was fol lowed by the decade of the 1970s, which was characterized by "technology push" in which the discoveries of the 1960s were seeking practical applica tion. In the 1980s we are instead seeking "applications pull," in which the success and rapid maturing of laser applications provides both inspiration and financial resources to stimulate additional work both on laser sources and applications. The papers presented in these Proceedings attest to the great vitali ty of research in both these areas: New Laser Sources. The papers describe current developments in ultra violet excimer lasers, X-ray lasers, and free electron lasers. These new lasers share several characteristics: each is a potentially important coher ent source; each is at a relatively short wavelength (below 1 micrometer); and each is receiving significant development attention today.


Rapid Thermal Processing

Rapid Thermal Processing

Author: Richard B. Fair

Publisher: Academic Press

Published: 2012-12-02

Total Pages: 441

ISBN-13: 0323139809

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This is the first definitive book on rapid thermal processing (RTP), an essential namufacturing technology for single-wafer processing in highly controlled environments. Written and edited by nine experts in the field, this book covers a range of topics for academics and engineers alike, moving from basic theory to advanced technology for wafer manufacturing. The book also provides new information on the suitability or RTP for thin film deposition, junction formation, silicides, epitaxy, and in situ processing. Complete discussions on equipment designs and comparisons between RTP and other processing approaches also make this book useful for supplemental information on silicon processing, VLSI processing, and integrated circuit engineering.


Oriented Crystallization on Amorphous Substrates

Oriented Crystallization on Amorphous Substrates

Author: E.I. Givargizov

Publisher: Springer Science & Business Media

Published: 2013-11-21

Total Pages: 377

ISBN-13: 1489925600

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Present-day scienceand technology have become increasingly based on studies and applications of thin films. This is especiallytrue of solid-state physics, semiconduc tor electronics, integrated optics, computer science, and the like. In these fields, it is necessary to use filmswith an ordered structure, especiallysingle-crystallinefilms, because physical phenomena and effects in such films are most reproducible. Also, active parts of semiconductor and other devices and circuits are created, as a rule, in single-crystal bodies. To date, single-crystallinefilms have been mainly epitaxial (or heteroepitaxial); i.e., they have been grown on a single-crystalline substrate, and principal trends, e.g., in the evolution of integrated circuits (lCs), have been based on continuing reduction in feature size and increase in the number of components per chip. However, as the size decreases into the submicrometer range, technological and physical limitations in integrated electronics become more and more severe. It is generally believed that a feature size of about 0.1um will have a crucial character. In other words, the present two-dimensional ICs are anticipated to reach their limit of minimization in the near future, and it is realized that further increase of packing density and/or functions might depend on three-dimensional integration. To solve the problem, techniques for preparation of single-crystalline films on arbitrary (including amorphous) substrates are essential.


The Physics and Technology of Amorphous SiO2

The Physics and Technology of Amorphous SiO2

Author: Roderick A.B. Devine

Publisher: Springer Science & Business Media

Published: 2012-12-06

Total Pages: 552

ISBN-13: 1461310318

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The contents of this volume represent most of the papers presented either orally or as posters at the international conference held in Les rd th Arcs, Savoie, from June 29 to July 3 1987. The declared objective of the conference was to bring together specialists working in various fields, both academic and applied, to examine the state of our under standing of the physics of amorphous sioz from the point of view of its structure, defects (both intrinsic and extrinsic), its ability to trans port current and to trap charges, its sensitivity to irradiation, etc. For this reason, the proceedings is divided, as was the conference schedule, into a number of sections starting from a rather academic viewpoint of the internal structure of idealized Si0 and progressing 2 towards subjects of increasing technological importance such as charge transport and trapping and breakdown in thin films. The proceedings terminates with a section on novel applications of amorphous SiOz and in particular, buried oxide layers formed by ion implantation. Although every effort was made at the conference to ensure that each presentation occured in its most obvious session, in editing the proceedings we have taken the liberty of changing the order where it seems that a paper was in fact more appropriate to an alternative section. In any event, because of the natural overlap of subjects, many papers could have been suitably placed in several different sections.


Laser Surface Treatment of Metals

Laser Surface Treatment of Metals

Author: C.W. Draper

Publisher: Springer Science & Business Media

Published: 2012-12-06

Total Pages: 670

ISBN-13: 9400944683

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Proceedings of the NATO Advanced Study Institute, San Miniato, Italy, September 2-13, 1985


Materials Modification by High-fluence Ion Beams

Materials Modification by High-fluence Ion Beams

Author: Roger Kelly

Publisher: Springer Science & Business Media

Published: 2012-12-06

Total Pages: 586

ISBN-13: 9400912676

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Proceedings of the NATO Advanced Study Institute on Materials Modification by High-Fluence Ion Beams, Viana do Castelo, Portugal, August 24-September 4, 1987