Embedded Flash Memory for Embedded Systems: Technology, Design for Sub-systems, and Innovations
Embedded Flash Memory for Embedded Systems: Technology, Design for Sub-systems, and Innovations

Author: Hideto Hidaka

Publisher: Springer

Published: 2017-09-09

Total Pages: 253

ISBN-13: 3319553062

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This book provides a comprehensive introduction to embedded flash memory, describing the history, current status, and future projections for technology, circuits, and systems applications. The authors describe current main-stream embedded flash technologies from floating-gate 1Tr, floating-gate with split-gate (1.5Tr), and 1Tr/1.5Tr SONOS flash technologies and their successful creation of various applications. Comparisons of these embedded flash technologies and future projections are also provided. The authors demonstrate a variety of embedded applications for auto-motive, smart-IC cards, and low-power, representing the leading-edge technology developments for eFlash. The discussion also includes insights into future prospects of application-driven non-volatile memory technology in the era of smart advanced automotive system, such as ADAS (Advanced Driver Assistance System) and IoE (Internet of Everything). Trials on technology convergence and future prospects of embedded non-volatile memory in the new memory hierarchy are also described. Introduces the history of embedded flash memory technology for micro-controller products and how embedded flash innovations developed; Includes comprehensive and detailed descriptions of current main-stream embedded flash memory technologies, sub-system designs and applications; Explains why embedded flash memory requirements are different from those of stand-alone flash memory and how to achieve specific goals with technology development and circuit designs; Describes a mature and stable floating-gate 1Tr cell technology imported from stand-alone flash memory products - that then introduces embedded-specific split-gate memory cell technologies based on floating-gate storage structure and charge-trapping SONOS technology and their eFlash sub-system designs; Describes automotive and smart-IC card applications requirements and achievements in advanced eFlash beyond 4 0nm node.

Nonvolatile Memory Technologies with Emphasis on Flash
Nonvolatile Memory Technologies with Emphasis on Flash

Author: Joe Brewer

Publisher: John Wiley & Sons

Published: 2011-09-23

Total Pages: 766

ISBN-13: 1118211626

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Presented here is an all-inclusive treatment of Flash technology, including Flash memory chips, Flash embedded in logic, binary cell Flash, and multilevel cell Flash. The book begins with a tutorial of elementary concepts to orient readers who are less familiar with the subject. Next, it covers all aspects and variations of Flash technology at a mature engineering level: basic device structures, principles of operation, related process technologies, circuit design, overall design tradeoffs, device testing, reliability, and applications.

Memory Design Techniques for Low Energy Embedded Systems
Memory Design Techniques for Low Energy Embedded Systems

Author: Alberto Macii

Publisher: Springer

Published: 2010-12-15

Total Pages: 144

ISBN-13: 9781441949530

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Memory Design Techniques for Low Energy Embedded Systems centers one of the most outstanding problems in chip design for embedded application. It guides the reader through different memory organizations and technologies and it reviews the most successful strategies for optimizing them in the power and performance plane.

Flash Memory Integration
Flash Memory Integration

Author: Jalil Boukhobza

Publisher: Elsevier

Published: 2017-03-10

Total Pages: 268

ISBN-13: 008101158X

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4 zettabytes (4 billion terabytes) of data generated in 2013, 44 zettabytes predicted for 2020 and 185 zettabytes for 2025. These figures are staggering and perfectly illustrate this new era of data deluge. Data has become a major economic and social challenge. The speed of processing of these data is the weakest link in a computer system: the storage system. It is therefore crucial to optimize this operation. During the last decade, storage systems have experienced a major revolution: the advent of flash memory. Flash Memory Integration: Performance and Energy Issues contributes to a better understanding of these revolutions. The authors offer us an insight into the integration of flash memory in computer systems, their behavior in performance and in power consumption compared to traditional storage systems. The book also presents, in their entirety, various methods for measuring the performance and energy consumption of storage systems for embedded as well as desktop/server computer systems. We are invited on a journey to the memories of the future. Ideal for computer scientists, featuring low level details to concentrate on system issues Tackles flash memory aspects while spanning domains such as embedded systems and HPC Contains an exhaustive set of experimental results conducted in the Lab-STICC laboratory Provides details on methodologies to perform performance and energy measurements on flash storage systems

Embedded Memories for Nano-Scale VLSIs
Embedded Memories for Nano-Scale VLSIs

Author: Kevin Zhang

Publisher: Springer

Published: 2010-12-08

Total Pages: 0

ISBN-13: 9781441946942

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Kevin Zhang Advancement of semiconductor technology has driven the rapid growth of very large scale integrated (VLSI) systems for increasingly broad applications, incl- ing high-end and mobile computing, consumer electronics such as 3D gaming, multi-function or smart phone, and various set-top players and ubiquitous sensor and medical devices. To meet the increasing demand for higher performance and lower power consumption in many different system applications, it is often required to have a large amount of on-die or embedded memory to support the need of data bandwidth in a system. The varieties of embedded memory in a given system have alsobecome increasingly more complex, ranging fromstatictodynamic and volatile to nonvolatile. Among embedded memories, six-transistor (6T)-based static random access memory (SRAM) continues to play a pivotal role in nearly all VLSI systems due to its superior speed and full compatibility with logic process technology. But as the technology scaling continues, SRAM design is facing severe challenge in mainta- ing suf?cient cell stability margin under relentless area scaling. Meanwhile, rapid expansion in mobile application, including new emerging application in sensor and medical devices, requires far more aggressive voltage scaling to meet very str- gent power constraint. Many innovative circuit topologies and techniques have been extensively explored in recent years to address these challenges.

Ultra-reliable Flash Memory Systems for Embedded Applications
Ultra-reliable Flash Memory Systems for Embedded Applications

Author: Thomas McCormick

Publisher:

Published: 2016

Total Pages: 234

ISBN-13:

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Based on its ruggedness, solid-state flash memory has been accepted as the basis of code and data storage in embedded systems applications for several decades. In more recent years, widespread mainstream acceptance of flash memory in consumer and enterprise applications has created tremendous downward cost pressures on flash memory manufacturers. The flash memory manufacturers have responded to these pressures by compromising on parameters that are most critical for flash memory's continued suitability for code storage in embedded computer applications. In particular, data retention specifications have been decreased from ten years to as low as one year. This is unacceptable for embedded systems applications that depend on flash memory systems to provide reliable code storage for many years of service. Enabling flash memory systems to continue to reliably support code storage in embedded computer applications requires that wear induced by write requests be minimized. One means of reducing write requests is to reduce the impact of the overhead writes performed by the flash translation layer (FTL) that is used to manage the flash memory while presenting the overall flash memory system as a non-volatile rewritable block device. These overhead write activities may be represented with a measure of Write Amplification Factor (WAF) which is the amount of flash write requests scaled by the amount of write requests performed by the system hosting the flash memory system. In this dissertation, we present FSAware, a novel algorithmic approach that enhances existing FTL designs. Specifically, FSAware reduces overall WAF by separately supporting the write requests associated with the file data and file system overhead produced by host file system write activities. FSAware distinguishes file data write requests from file system overhead write requests by characterizing the file system installed on the flash memory system by the host system. We consider the File Allocation Table (FAT) format, which is specifically selected for its ubiquity in embedded computer applications. FSAware is applicable to both block-mode and page-mode style FTLs. In this work, we develop a novel instrumentation technique called FTLProbe to develop empirical (gray box) models of commercially available drives. Our empirical models are then used to develop WAF equations for file system operations. Simulations of FSAware on commercially available drives are validated with extensions of these WAF equations. Our simulations results show that FSAware can produce a 97% reduction of WAF for a block-mode FTL and a 36% reduction of WAF for a page-mode FTL. Further extension of the WAF equations show that an enhanced FSAware that consolidates meta-data into a single flash allocation unit can theoretically produce a 99% reduction of WAF for a block-mode FTL and a 64% reduction of WAF for a page-mode FTL. With these reductions in overall WAF for file system operations associated with embedded systems, FSAware can form the basis of an ultra-reliable flash memory system for embedded computer applications.

Flash Memories
Flash Memories

Author: Detlev Richter

Publisher: Springer

Published: 2016-08-23

Total Pages: 0

ISBN-13: 9789401779746

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The subject of this book is to introduce a model-based quantitative performance indicator methodology applicable for performance, cost and reliability optimization of non-volatile memories. The complex example of flash memories is used to introduce and apply the methodology. It has been developed by the author based on an industrial 2-bit to 4-bit per cell flash development project. For the first time, design and cost aspects of 3D integration of flash memory are treated in this book. Cell, array, performance and reliability effects of flash memories are introduced and analyzed. Key performance parameters are derived to handle the flash complexity. A performance and array memory model is developed and a set of performance indicators characterizing architecture, cost and durability is defined. Flash memories are selected to apply the Performance Indicator Methodology to quantify design and technology innovation. A graphical representation based on trend lines is introduced to support a requirement based product development process. The Performance Indicator methodology is applied to demonstrate the importance of hidden memory parameters for a successful product and system development roadmap. Flash Memories offers an opportunity to enhance your understanding of product development key topics such as: · Reliability optimization of flash memories is all about threshold voltage margin understanding and definition; · Product performance parameter are analyzed in-depth in all aspects in relation to the threshold voltage operation window; · Technical characteristics are translated into quantitative performance indicators; · Performance indicators are applied to identify and quantify product and technology innovation within adjacent areas to fulfill the application requirements with an overall cost optimized solution; · Cost, density, performance and durability values are combined into a common factor – performance indicator - which fulfills the application requirements

Flash Memory Devices
Flash Memory Devices

Author: Cristian Zambelli

Publisher: Mdpi AG

Published: 2022-02-10

Total Pages: 144

ISBN-13: 9783036530123

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Flash memory devices have represented a breakthrough in storage since their inception in the mid-1980s, and innovation is still ongoing. The peculiarity of such technology is an inherent flexibility in terms of performance and integration density according to the architecture devised for integration. The NOR Flash technology is still the workhorse of many code storage applications in the embedded world, ranging from microcontrollers for automotive environment to IoT smart devices. Their usage is also forecasted to be fundamental in emerging AI edge scenario. On the contrary, when massive data storage is required, NAND Flash memories are necessary to have in a system. You can find NAND Flash in USB sticks, cards, but most of all in Solid-State Drives (SSDs). Since SSDs are extremely demanding in terms of storage capacity, they fueled a new wave of innovation, namely the 3D architecture. Today "3D" means that multiple layers of memory cells are manufactured within the same piece of silicon, easily reaching a terabit capacity. So far, Flash architectures have always been based on "floating gate," where the information is stored by injecting electrons in a piece of polysilicon surrounded by oxide. On the contrary, emerging concepts are based on "charge trap" cells. In summary, flash memory devices represent the largest landscape of storage devices, and we expect more advancements in the coming years. This will require a lot of innovation in process technology, materials, circuit design, flash management algorithms, Error Correction Code and, finally, system co-design for new applications such as AI and security enforcement.

3D Flash Memories
3D Flash Memories

Author: Rino Micheloni

Publisher: Springer

Published: 2016-05-26

Total Pages: 391

ISBN-13: 9401775125

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This book walks the reader through the next step in the evolution of NAND flash memory technology, namely the development of 3D flash memories, in which multiple layers of memory cells are grown within the same piece of silicon. It describes their working principles, device architectures, fabrication techniques and practical implementations, and highlights why 3D flash is a brand new technology. After reviewing market trends for both NAND and solid state drives (SSDs), the book digs into the details of the flash memory cell itself, covering both floating gate and emerging charge trap technologies. There is a plethora of different materials and vertical integration schemes out there. New memory cells, new materials, new architectures (3D Stacked, BiCS and P-BiCS, 3D FG, 3D VG, 3D advanced architectures); basically, each NAND manufacturer has its own solution. Chapter 3 to chapter 7 offer a broad overview of how 3D can materialize. The 3D wave is impacting emerging memories as well and chapter 8 covers 3D RRAM (resistive RAM) crosspoint arrays. Visualizing 3D structures can be a challenge for the human brain: this is way all these chapters contain a lot of bird’s-eye views and cross sections along the 3 axes. The second part of the book is devoted to other important aspects, such as advanced packaging technology (i.e. TSV in chapter 9) and error correction codes, which have been leveraged to improve flash reliability for decades. Chapter 10 describes the evolution from legacy BCH to the most recent LDPC codes, while chapter 11 deals with some of the most recent advancements in the ECC field. Last but not least, chapter 12 looks at 3D flash memories from a system perspective. Is 14nm the last step for planar cells? Can 100 layers be integrated within the same piece of silicon? Is 4 bit/cell possible with 3D? Will 3D be reliable enough for enterprise and datacenter applications? These are some of the questions that this book helps answering by providing insights into 3D flash memory design, process technology and applications.