Elastic and Inelastic Scattering in Electron Diffraction and Imaging
Elastic and Inelastic Scattering in Electron Diffraction and Imaging

Author: Zhong-lin Wang

Publisher: Springer Science & Business Media

Published: 2013-06-29

Total Pages: 461

ISBN-13: 1489915796

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Elastic and inelastic scattering in transmission electron microscopy (TEM) are important research subjects. For a long time, I have wished to systematically summarize various dynamic theories associated with quantitative electron micros copy and their applications in simulations of electron diffraction patterns and images. This wish now becomes reality. The aim of this book is to explore the physics in electron diffraction and imaging and related applications for materials characterizations. Particular emphasis is placed on diffraction and imaging of inelastically scattered electrons, which, I believe, have not been discussed exten sively in existing books. This book assumes that readers have some preknowledge of electron microscopy, electron diffraction, and quantum mechanics. I anticipate that this book will be a guide to approaching phenomena observed in electron microscopy from the prospects of diffraction physics. The SI units are employed throughout the book except for angstrom (A), which is used occasionally for convenience. To reduce the number of symbols used, the Fourier transform of a real-space function P'(r), for example, is denoted by the same symbol P'(u) in reciprocal space except that r is replaced by u. Upper and lower limits of an integral in the book are (-co, co) unless otherwise specified. The (-co, co) integral limits are usually omitted in a mathematical expression for simplification. I very much appreciate opportunity of working with Drs. J. M. Cowley and J. C. H. Spence (Arizona State University), J.

Transmission Electron Microscopy
Transmission Electron Microscopy

Author: David B. Williams

Publisher: Springer Science & Business Media

Published: 2013-03-09

Total Pages: 708

ISBN-13: 1475725191

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Electron microscopy has revolutionized our understanding the extraordinary intellectual demands required of the mi of materials by completing the processing-structure-prop croscopist in order to do the job properly: crystallography, erties links down to atomistic levels. It now is even possible diffraction, image contrast, inelastic scattering events, and to tailor the microstructure (and meso structure ) of materials spectroscopy. Remember, these used to be fields in them to achieve specific sets of properties; the extraordinary abili selves. Today, one has to understand the fundamentals ties of modem transmission electron microscopy-TEM of all of these areas before one can hope to tackle signifi instruments to provide almost all of the structural, phase, cant problems in materials science. TEM is a technique of and crystallographic data allow us to accomplish this feat. characterizing materials down to the atomic limits. It must Therefore, it is obvious that any curriculum in modem mate be used with care and attention, in many cases involving rials education must include suitable courses in electron mi teams of experts from different venues. The fundamentals croscopy. It is also essential that suitable texts be available are, of course, based in physics, so aspiring materials sci for the preparation of the students and researchers who must entists would be well advised to have prior exposure to, for carry out electron microscopy properly and quantitatively.

High Energy Electron Diffraction and Microscopy
High Energy Electron Diffraction and Microscopy

Author: L.-M. Peng

Publisher: Oxford University Press, USA

Published: 2004

Total Pages: 580

ISBN-13: 9780198500742

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This book is an in-depth treatment of the theoretical background relevant to an understanding of materials that can be obtained by using high-energy electron diffraction and microscopy.

Image Formation in Low-voltage Scanning Electron Microscopy
Image Formation in Low-voltage Scanning Electron Microscopy

Author: Ludwig Reimer

Publisher: SPIE Press

Published: 1993

Total Pages: 162

ISBN-13: 9780819412065

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While most textbooks about scanning electron microscopy (SEM) cover the high-voltage range from 5-50 keV, this volume considers the special problems in low-voltage SEM and summarizes the differences between LVSEM and conventional SEM. Chapters cover the influence of lens aberrations and design on electron-probe formation; the effect of elastic and inelastic scattering processes on electron diffusion and electron range; charging and radiation damage effects; the dependence of SE yield and the backscattering coefficient on electron energy, surface tilt, and material as well as the angular and energy distributions; and types of image contrast and the differences between LVSEM and conventional SEM modes due to the influence of electron-specimen interactions.

Scanning Electron Microscopy
Scanning Electron Microscopy

Author: Ludwig Reimer

Publisher: Springer

Published: 2013-11-11

Total Pages: 538

ISBN-13: 3540389679

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Scanning Electron Microscopy provides a description of the physics of electron-probe formation and of electron-specimen interactions. The different imaging and analytical modes using secondary and backscattered electrons, electron-beam-induced currents, X-ray and Auger electrons, electron channelling effects, and cathodoluminescence are discussed to evaluate specific contrasts and to obtain quantitative information.

Electron Backscatter Diffraction in Materials Science
Electron Backscatter Diffraction in Materials Science

Author: Adam J. Schwartz

Publisher: Springer Science & Business Media

Published: 2010-03-11

Total Pages: 406

ISBN-13: 0387881360

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Electron backscatter diffraction is a very powerful and relatively new materials characterization technique aimed at the determination of crystallographic texture, grain boundary character distributions, lattice strain, phase identification, and much more. The purpose of this book is to provide the fundamental basis for electron backscatter diffraction in materials science, the current state of both hardware and software, and illustrative examples of the applications of electron backscatter diffraction to a wide-range of materials including undeformed and deformed metals and alloys, ceramics, and superconductors. The text has been substantially revised from the first edition, and the authors have kept the format as close as possible to the first edition text. The new developments covered in this book include a more comphrensive coverage of the fundamentals not covered in the first edition or other books in the field, the advances in hardware and software since the first edition was published, and current examples of application of electron backscatter diffraction to solve challenging problems in materials science and condensed-matter physics.

Transmission Electron Microscopy and Diffractometry of Materials
Transmission Electron Microscopy and Diffractometry of Materials

Author: Brent Fultz

Publisher: Springer Science & Business Media

Published: 2012-10-14

Total Pages: 775

ISBN-13: 3642297609

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This book explains concepts of transmission electron microscopy (TEM) and x-ray diffractometry (XRD) that are important for the characterization of materials. The fourth edition adds important new techniques of TEM such as electron tomography, nanobeam diffraction, and geometric phase analysis. A new chapter on neutron scattering completes the trio of x-ray, electron and neutron diffraction. All chapters were updated and revised for clarity. The book explains the fundamentals of how waves and wavefunctions interact with atoms in solids, and the similarities and differences of using x-rays, electrons, or neutrons for diffraction measurements. Diffraction effects of crystalline order, defects, and disorder in materials are explained in detail. Both practical and theoretical issues are covered. The book can be used in an introductory-level or advanced-level course, since sections are identified by difficulty. Each chapter includes a set of problems to illustrate principles, and the extensive Appendix includes laboratory exercises.

Transmission Electron Microscopy
Transmission Electron Microscopy

Author: C. Barry Carter

Publisher: Springer

Published: 2016-08-24

Total Pages: 543

ISBN-13: 3319266519

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This text is a companion volume to Transmission Electron Microscopy: A Textbook for Materials Science by Williams and Carter. The aim is to extend the discussion of certain topics that are either rapidly changing at this time or that would benefit from more detailed discussion than space allowed in the primary text. World-renowned researchers have contributed chapters in their area of expertise, and the editors have carefully prepared these chapters to provide a uniform tone and treatment for this exciting material. The book features an unparalleled collection of color figures showcasing the quality and variety of chemical data that can be obtained from today’s instruments, as well as key pitfalls to avoid. As with the previous TEM text, each chapter contains two sets of questions, one for self assessment and a second more suitable for homework assignments. Throughout the book, the style follows that of Williams & Carter even when the subject matter becomes challenging—the aim is always to make the topic understandable by first-year graduate students and others who are working in the field of Materials Science Topics covered include sources, in-situ experiments, electron diffraction, Digital Micrograph, waves and holography, focal-series reconstruction and direct methods, STEM and tomography, energy-filtered TEM (EFTEM) imaging, and spectrum imaging. The range and depth of material makes this companion volume essential reading for the budding microscopist and a key reference for practicing researchers using these and related techniques.

Impact of Electron and Scanning Probe Microscopy on Materials Research
Impact of Electron and Scanning Probe Microscopy on Materials Research

Author: David G. Rickerby

Publisher: Springer Science & Business Media

Published: 2012-12-06

Total Pages: 503

ISBN-13: 9401144516

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The Advanced Study Institute provided an opportunity for researchers in universities, industry and National and International Laboratories, from the disciplines ofmaterials science, physics, chemistry and engineering to meet together in an assessment of the impact of electron and scanning probe microscopy on advanced material research. Since these researchers have traditionally relied upon different approaches, due to their different scientific background, to advanced materials problem solving, presentations and discussion within the Institute sessions were initially devoted to developing a set ofmutually understood basic concepts, inherently related to different techniques ofcharacterization by microscopy and spectroscopy. Particular importance was placed on Electron Energy Loss Spectroscopy (EELS), Scanning Probe Microscopy (SPM), High Resolution Transmission and Scanning Electron Microscopy (HRTEM, HRSTEM) and Environmental Scanning Electron Microscopy (ESEM). It was recognized that the electronic structure derived directly from EELS analysis as well as from atomic positions in HRTEM or High Angle Annular Dark Field STEM can be used to understand the macroscopic behaviour of materials. The emphasis, however, was upon the analysis of the electronic band structure of grain boundaries, fundamental for the understanding of macroscopic quantities such as strength, cohesion, plasticity, etc.