Doping Engineering for Device Fabrication: Volume 912
Doping Engineering for Device Fabrication: Volume 912

Author: B. J. Pawlak

Publisher:

Published: 2006-10-11

Total Pages: 240

ISBN-13:

DOWNLOAD EBOOK

This volume from the 2006 MRS Spring Meeting focuses on fundamental materials science and device research for current transistor technologies. Materials scientists come together with silicon technologists and TCAD researchers and activation technologies for integrated circuits, to discuss current achievements research directions.

Materials in Extreme Environments: Volume 929
Materials in Extreme Environments: Volume 929

Author: Daryush Ila

Publisher:

Published: 2006-09-15

Total Pages: 242

ISBN-13:

DOWNLOAD EBOOK

This book investigates the fundamental properties and response of materials in extreme environments such as static and dynamic high pressure, high strain and high strain-rates, high radiation and electromagnetic fields, high and low temperatures, corrosive conditions, environments causing embrittlement, and environments containing atomic oxygen. This is an extremely active and vibrant field of research, in particular because it is now possible to create laboratory conditions similar in pressure, temperature and radiation to those found in planetary interiors and in space. In addition, advanced simulation methods, coupled with high-performance computing platforms, now afford predictions - on a first-principles basis - of the properties of materials in extreme environments. Scientists from a broad spectrum of fields are represented, including space science, planetary science, high-pressure research, shock physics, ultrafast science, and energetic materials research.

Transistor Scaling: Volume 913
Transistor Scaling: Volume 913

Author: Scott Thompson

Publisher:

Published: 2006-11-07

Total Pages: 234

ISBN-13:

DOWNLOAD EBOOK

The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners. This book shares results and physical models related to MOSFETs and to discuss innovative approaches necessary to continue the transistor scaling. Expanded versions of presentations in the areas of technology development are featured

Semiconductor Material and Device Characterization
Semiconductor Material and Device Characterization

Author: Dieter K. Schroder

Publisher: John Wiley & Sons

Published: 2015-06-29

Total Pages: 800

ISBN-13: 0471739065

DOWNLOAD EBOOK

This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including: Updated and revised figures and examples reflecting the most current data and information 260 new references offering access to the latest research and discussions in specialized topics New problems and review questions at the end of each chapter to test readers' understanding of the material In addition, readers will find fully updated and revised sections in each chapter. Plus, two new chapters have been added: Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy. Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge. Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.