Semiconductor Silicon 1981
Author: Howard R. Huff
Publisher:
Published: 1981
Total Pages: 1076
ISBN-13:
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Author: Howard R. Huff
Publisher:
Published: 1981
Total Pages: 1076
ISBN-13:
DOWNLOAD EBOOKAuthor: Yutaka Yoshida
Publisher: Springer
Published: 2016-03-30
Total Pages: 498
ISBN-13: 4431558004
DOWNLOAD EBOOKThis book emphasizes the importance of the fascinating atomistic insights into the defects and the impurities as well as the dynamic behaviors in silicon materials, which have become more directly accessible over the past 20 years. Such progress has been made possible by newly developed experimental methods, first principle theories, and computer simulation techniques. The book is aimed at young researchers, scientists, and technicians in related industries. The main purposes are to provide readers with 1) the basic physics behind defects in silicon materials, 2) the atomistic modeling as well as the characterization techniques related to defects and impurities in silicon materials, and 3) an overview of the wide range of the research fields involved.
Author: Charles P. Marsden
Publisher:
Published: 1970
Total Pages: 472
ISBN-13:
DOWNLOAD EBOOKThe objective of the Symposium was to provide an opportunity for engineers and applied scientists actively engaged in the silicon device technology field to discuss the most advanced measurement methods for process control and materials characterization.The basic theme of the meeting was to stress the interdependence of measurements techniques, facilities, and materials as they relate to the overall problems of improving and advancing silicon device sciences and technologies.(Author).
Author:
Publisher:
Published: 1982
Total Pages: 1282
ISBN-13:
DOWNLOAD EBOOKLists citations with abstracts for aerospace related reports obtained from world wide sources and announces documents that have recently been entered into the NASA Scientific and Technical Information Database.
Author: Mijoe Joseph
Publisher: Anchor Academic Publishing (aap_verlag)
Published: 2015-05-11
Total Pages: 164
ISBN-13: 3954899191
DOWNLOAD EBOOKSemiconductors have made an enormous impact on 20th century science and technology. This is because components made from semiconductors have very favorable properties such as low energy consumption, compactness, and high reliability, and so they now dominate electronics and radio engineering. Semiconductors are indispensable for space exploration and where the requirements of small size, low weight and low energy consumption are especially stringent. The book uses quantum-mechanical concepts and band theory to present the theory of semiconductors in a comprehensible for. It also describes how basic semiconductor devices (e.g. diodes, transistors, and lasers) operate. The book was written for senior high-school students interested in physics.
Author: Safa Kasap
Publisher: Springer
Published: 2017-10-04
Total Pages: 1536
ISBN-13: 331948933X
DOWNLOAD EBOOKThe second, updated edition of this essential reference book provides a wealth of detail on a wide range of electronic and photonic materials, starting from fundamentals and building up to advanced topics and applications. Its extensive coverage, with clear illustrations and applications, carefully selected chapter sequencing and logical flow, makes it very different from other electronic materials handbooks. It has been written by professionals in the field and instructors who teach the subject at a university or in corporate laboratories. The Springer Handbook of Electronic and Photonic Materials, second edition, includes practical applications used as examples, details of experimental techniques, useful tables that summarize equations, and, most importantly, properties of various materials, as well as an extensive glossary. Along with significant updates to the content and the references, the second edition includes a number of new chapters such as those covering novel materials and selected applications. This handbook is a valuable resource for graduate students, researchers and practicing professionals working in the area of electronic, optoelectronic and photonic materials.
Author: Peter Pichler
Publisher: Springer Science & Business Media
Published: 2012-12-06
Total Pages: 576
ISBN-13: 3709105978
DOWNLOAD EBOOKThis book contains the first comprehensive review of intrinsic point defects, impurities and their complexes in silicon. Besides compiling the structures, energetic properties, identified electrical levels and spectroscopic signatures, and the diffusion behaviour from investigations, it gives a comprehensive introduction into the relevant fundamental concepts.
Author:
Publisher:
Published: 1998
Total Pages: 800
ISBN-13:
DOWNLOAD EBOOKAuthor: G E Murch
Publisher: Academic Press
Published: 2012-12-02
Total Pages: 503
ISBN-13: 0323140300
DOWNLOAD EBOOKDiffusion in Crystalline Solids addresses some of the most active areas of research on diffusion in crystalline solids. Topics covered include measurement of tracer diffusion coefficients in solids, diffusion in silicon and germanium, atom transport in oxides of the fluorite structure, tracer diffusion in concentrated alloys, diffusion in dislocations, grain boundary diffusion mechanisms in metals, and the use of the Monte Carlo Method to simulate diffusion kinetics. This book is made up of eight chapters and begins with an introduction to the measurement of diffusion coefficients with radioisotopes. The following three chapters consider diffusion in materials of substantial technological importance such as silicon and germanium. Atomic transport in oxides of the fluorite structure is described, and diffusion in concentrated alloys, including intermetallic compounds, is analyzed. The next two chapters delve into diffusion along short-circuiting paths, focusing on the effect of diffusion down dislocations on the form of the tracer concentration profile. The book also discusses the mechanisms of diffusion in grain boundaries in metals by invoking considerable work done on grain-boundary structure. The last two chapters are concerned with computer simulation, paying particular attention to machine calculations and the Monte Carlo method. The book concludes by exploring the fundamental atomic migration process and presenting some state-of-the-art calculations for defect energies and the topology of the saddle surface. Students and researchers of material science will find this book extremely useful.
Author:
Publisher: Springer Science & Business Media
Published: 2013-11-11
Total Pages: 562
ISBN-13: 3662069946
DOWNLOAD EBOOKThis volume concludes the coverage of silicon carbide, SiC, begun in "Silicon" Supplement Volume B 2, 1984, subtitled "Silicon Carbide - Part I". Part I described the physical properties of SiC, SiC diodes, molecular species in the SiC-C gas phase, and amorphous silicon-carbon alloys. The current Part II ("Silicon" Supplement Volume B 3,1986) covers in its initial chapter the Si-C phase diagram and in the final chapters the higher order systems of Si and C with additional elements through boron, arranged according to the Gmelin system. In between some 95% of the volume focusses on SiC, beginning with its natural occurrence, preparation and formation, and purification, continuing with its chemical analysis, manufacture of special ized forms, electrochemistry, and chemical reactions, and concluding with descriptions of its myriad applications. The final applications section covering electronic devices also describes similar applications of the amorphous Si-C alloys. The successive chapters in this volume are often closely interrelated, since it is often necessary to synthesize SiC directly in a form in which it will be applied. SiC cannot be melted and cast, nor rolled nor drawn, nor is it easily electroplated or sintered or purified. Silicon carbide first became known to man when E. G. Acheson in 1891 used an electric current to heat a mixture of clay and carbon to extremely high temperatures.