Diffraction and Imaging Techniques in Material Science P2

Diffraction and Imaging Techniques in Material Science P2

Author: S Amelinckx

Publisher: Elsevier

Published: 2012-12-02

Total Pages: 412

ISBN-13: 0444601864

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Diffraction and Imaging Techniques in Material Science reviews recent developments in diffraction and imaging techniques used in the study of materials. It discusses advances in high-voltage electron microscopy, low-energy electron diffraction (LEED), X-ray and neutron diffraction, X-ray topography, mirror electron microscopy, and field emission microscopy. Organized into five parts encompassing nine chapters, this volume begins with an overview of the dynamical theory of the diffraction of high-energy electrons in crystals and methodically introduces the reader to dynamical diffraction in perfect and imperfect crystals, inelastic scattering of electrons in crystals, and X-ray production. It then explores back scattering effects, the technical features of high-voltage electron microscopes, and surface characterization by LEED. Other chapters focus on the kinematical theory of X-ray diffraction, techniques and interpretation in X-ray topography, and interpretation of the contrast of the images of defects on X-ray topographs. The book also describes theory and applications of mirror electron microscopy, surface studies by field emission of electrons, field ionization and field evaporation, and gas-surface interactions before concluding with a discussion on lattice imperfections. Scientists and students taking courses on diffraction and solid-state electron microscopy will benefit from this book.


Diffraction and Imaging Techniques in Material Science P1

Diffraction and Imaging Techniques in Material Science P1

Author: S Amelinckx

Publisher: Elsevier

Published: 2012-12-02

Total Pages: 472

ISBN-13: 0444601848

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Diffraction and Imaging Techniques in Material Science describes the various methods used to study the atomic structure of matter at an atomic scale based on the interaction between matter and radiation. It classifies the possible methods of observation by making a list of radiations on the basis of wavelength, including ions, X-ray photons, neutrons, and electrons. It also discusses transmission electron microscopy, the weak-beam method of electron microscopy, and some applications of transmission electron microscopy to phase transitions. Organized into 13 chapters, this volume begins with an overview of the kinematic theory of electron diffraction and the ways to treat diffraction by a deformed crystal. It discusses the dynamical theory of diffraction of fast electrons, the treatment of absorption in the dynamical theory of electron diffraction, the use of electron microscopy to study planar interfaces, and analysis of weak-beam images. The book also covers the use of computed electron micrographs in defect identification, crystallographic analysis of dislocation loops containing shear components, and detection and identification of small coherent particles. In addition, the reader is introduced to interpretation of diffuse scattering and short-range order, along with the crystallography of martensitic transformations. The remaining chapters focus on the working principle of the transmission electron microscope, experimental structure imaging of crystals, and the study of diffuse scattering effects originating from substitutional disorder and displacement disorder. The information on diffraction and imaging techniques in material science contained in this book will be helpful to students, researchers, and scientists.


Characterization of Solid Surfaces

Characterization of Solid Surfaces

Author: Philip F. Kane

Publisher: Springer Science & Business Media

Published: 2013-11-27

Total Pages: 675

ISBN-13: 1461344905

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Until comparatively recently, trace analysis techniques were in general directed toward the determination of impurities in bulk materials. Methods were developed for very high relative sensitivity, and the values determined were average values. Sampling procedures were devised which eliminated the so-called sampling error. However, in the last decade or so, a number of developments have shown that, for many purposes, the distribution of defects within a material can confer important new properties on the material. Perhaps the most striking example of this is given by semiconductors; a whole new industry has emerged in barely twenty years based entirely on the controlled distribu tion of defects within what a few years before would have been regarded as a pure, homogeneous crystal. Other examples exist in biochemistry, metallurgy, polyiners and, of course, catalysis. In addition to this of the importance of distribution, there has also been a recognition growing awareness that physical defects are as important as chemical defects. (We are, of course, using the word defect to imply some dis continuity in the material, and not in any derogatory sense. ) This broadening of the field of interest led the Materials Advisory Board( I} to recommend a new definition for the discipline, "Materials Character ization," to encompass this wider concept of the determination of the structure and composition of materials. In characterizing a material, perhaps the most important special area of interest is the surface.


International Tables for Crystallography, Volume B

International Tables for Crystallography, Volume B

Author: Uri Shmueli

Publisher: Springer Science & Business Media

Published: 2008-08-27

Total Pages: 704

ISBN-13: 9781402082054

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International Tables for Crystallography are no longer available for purchase from Springer. For further information please contact Wiley Inc. (follow the link on the right hand side of this page). Volume B presents accounts of the numerous aspects of reciprocal space in crystallographic research. After an introductory chapter, Part 1 presents the reader with an account of structure-factor formalisms, an extensive treatment of the theory, algorithms and crystallographic applications of Fourier methods, and fundamental as well as advanced treatments of symmetry in reciprocal space. In Part 2, these general accounts are followed by detailed expositions of crystallographic statistics, the theory of direct methods, Patterson techniques, isomorphous replacement and anomalous scattering, and treatments of the role of electron microscopy and diffraction in crystal structure determination, including applications of direct methods to electron crystallography. Part 3 deals with applications of reciprocal space to molecular geometry and `best'-plane calculations, and contains a treatment of the principles of molecular graphics and modelling and their applications. A convergence-acceleration method of importance in the computation of approximate lattice sums is presented and the part concludes with a discussion of the Ewald method. Part 4 contains treatments of various diffuse-scattering phenomena arising from crystal dynamics, disorder and low dimensionality (liquid crystals), and an exposition of the underlying theories and/or experimental evidence. Polymer crystallography and reciprocal-space images of aperiodic crystals are also treated. Part 5 of the volume contains introductory treatments of the theory of the interaction of radiation with matter (dynamical theory) as applied to X-ray, electron and neutron diffraction techniques. The simplified trigonometric expressions for the structure factors in the 230 three-dimensional space groups, which appeared in Volume I of International Tables for X-ray Crystallography, are now given in Appendix 1.4.3 to Chapter 1.4 of this volume. Volume B is a vital addition to the library of scientists engaged in crystal structure determination, crystallographic computing, crystal physics and other fields of crystallographic research. Graduate students specializing in crystallography will find much material suitable for self-study and a rich source of references to the relevant literature.