Design and Fabrication of 4H Silicon Carbide Gate Turn-off Thyristors
Author: Lei Lin
Publisher:
Published: 2013
Total Pages: 106
ISBN-13:
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Author: Lei Lin
Publisher:
Published: 2013
Total Pages: 106
ISBN-13:
DOWNLOAD EBOOKAuthor: Jian Wu
Publisher:
Published: 2009
Total Pages: 158
ISBN-13:
DOWNLOAD EBOOKThe 4H-SiC power MOSFET is an excellent candidate for power applications. Major technical difficulties in the development of 4H-SiC power MOSFET have been low MOS channel mobility and gate oxide reliability. In this dissertation, a novel 4H-SiC power MOSFET structure has been presented with the aim of solving these problems. The research started from the study and improvement of the channel mobility of lateral trench-gate MOSFET that features an accumulation channel for high channel mobility. The design, fabrication and characterization of lateral trench-gate MOSFET are presented. The fabricated lateral trench-gate MOSFET with an accumulation channel of 0.15 [micrometers] exhibited a high peak channel mobility of 95 cm2/Vs at room temperature and 255 cm2/Vs at 200oC with stable normally-off operation. Based on the successful demonstration of high channel mobility, a vertical trench-gate power MOSFET structure has been designed and developed. This structure also features an epitaxial N-type accumulation channel to take advantage of high channel mobility. Moreover, this structure introduces a submicron N-type vertical channel by counter-doping the P base region via a low-dose nitrogen ion implantation. The implanted vertical channel provides effective shielding for gate oxide from high electric field. A process using the oxidation of polysilicon was developed to achieve self-alignment between the submicron vertical channel and the gate trench. A "sandwich" process, including nitric oxide growth, dry oxygen growth and nitric oxide annealing, was incorporated to grow high-quality gate oxide. The fabricated single-gate vertical MOSFET can block up to 890 V at zero gate bias. The device exhibited a low specific on-resistance of 9.3 m[omega]cm2 at VGS=70 V, resulting in an improved FOM () of 85 MW/cm2. A large-area MOSFET with an active area of 4.26x10-2 cm2 can block up to 810V with a low leakage current of 21 [micro]A and conducted a high on-current of 1 A at VDS=3 V and VGS=50 V. The fabricated devices all exhibited the stable normally-off operation with threshold voltages of 5~6 V. Their subthreshold characteristics with high on/off ratios of 3~5 indicates that the MOSFETs are capable of operating stably as switching devices.
Author: David C. Sheridan
Publisher:
Published: 2001
Total Pages: 34
ISBN-13:
DOWNLOAD EBOOKAuthor: Wolfgang J. Choyke
Publisher: Springer Science & Business Media
Published: 2013-04-17
Total Pages: 911
ISBN-13: 3642188702
DOWNLOAD EBOOKSince the 1997 publication of "Silicon Carbide - A Review of Fundamental Questions and Applications to Current Device Technology" edited by Choyke, et al., there has been impressive progress in both the fundamental and developmental aspects of the SiC field. So there is a growing need to update the scientific community on the important events in research and development since then. The editors have again gathered an outstanding team of the world's leading SiC researchers and design engineers to write on the most recent developments in SiC.
Author: Jianhui Zhang
Publisher:
Published: 2006
Total Pages: 320
ISBN-13: 9780542955099
DOWNLOAD EBOOK4H silicon carbide (4H-SiC) bipolar junction transistor (BJT) is a very promising wide band gap semiconductor switching device for high temperature and high power applications. The superior material properties of 4H-SiC, including wide band gap, high breakdown electric field, high thermal conductivity make 4H-SiC ideal for power electronics applications. 4H-SiC power BJT is an intrinsically normally-off switching device, has higher current handling capabilities due to its bipolar character, and is free of the gate oxide problems as in 4H-SiC metal-oxide-semiconductor field effect transistor (MOSFET). Moreover, 4H-SiC BJT easily surpasses silicon BJT with higher current gain, much larger safe-operating-area (SOA) and free of thermal breakdown problem. 4H-SiC power BJT has been gaining more and more attentions since it was first reported in 2000.
Author: Woongje Sung
Publisher:
Published: 2011
Total Pages: 177
ISBN-13:
DOWNLOAD EBOOKAuthor: Peter Friedrichs
Publisher: John Wiley & Sons
Published: 2011-04-08
Total Pages: 520
ISBN-13: 9783527629084
DOWNLOAD EBOOKSilicon Carbide - this easy to manufacture compound of silicon and carbon is said to be THE emerging material for applications in electronics. High thermal conductivity, high electric field breakdown strength and high maximum current density make it most promising for high-powered semiconductor devices. Apart from applications in power electronics, sensors, and NEMS, SiC has recently gained new interest as a substrate material for the manufacture of controlled graphene. SiC and graphene research is oriented towards end markets and has high impact on areas of rapidly growing interest like electric vehicles. This volume is devoted to high power devices products and their challenges in industrial application. Readers will benefit from reports on development and reliability aspects of Schottky barrier diodes, advantages of SiC power MOSFETs, or SiC sensors. The authors discuss MEMS and NEMS as SiC-based electronics for automotive industry as well as SiC-based circuit elements for high temperature applications, and the application of transistors in PV-inverters. The list of contributors reads like a "Who's Who" of the SiC community, strongly benefiting from collaborations between research institutions and enterprises active in SiC crystal growth and device development. Among the former are CREE Inc. and Fraunhofer ISE, while the industry is represented by Toshiba, Nissan, Infineon, NASA, Naval Research Lab, and Rensselaer Polytechnic Institute, to name but a few.
Author: Calvin H. Carter
Publisher:
Published: 2000
Total Pages: 908
ISBN-13:
DOWNLOAD EBOOKThis two-volume set contains written versions of papers presented at the International Conference on Silicon Carbide and Related Materials - 1999 (ICSCRM'99) held October 10-15, 1999, at Research Triangle Park, North Carolina. They contain 401 papers, 19 of which were invited.
Author: K. Shenai
Publisher: The Electrochemical Society
Published: 2011
Total Pages: 361
ISBN-13: 1607682621
DOWNLOAD EBOOKAuthor: B Jayant Baliga
Publisher: World Scientific Publishing Company
Published: 2016-12-12
Total Pages: 592
ISBN-13: 9813109424
DOWNLOAD EBOOKDuring the last 30 years, significant progress has been made to improve our understanding of gallium nitride and silicon carbide device structures, resulting in experimental demonstration of their enhanced performances for power electronic systems. Gallium nitride power devices made by the growth of the material on silicon substrates have gained a lot of interest. Power device products made from these materials have become available during the last five years from many companies.This comprehensive book discusses the physics of operation and design of gallium nitride and silicon carbide power devices. It can be used as a reference by practicing engineers in the power electronics industry and as a textbook for a power device or power electronics course in universities.