This volume on materials engineering comprises a collection of abstracts of recent scholarly papers and articles concerning a wide variety of topics related to the effects of structural defects and diffusion in many material areas, including thin-film manufacturing and facing metals.
This volume on materials engineering comprises a collection of abstracts of recent scholarly papers and articles concerning a wide variety of topics related to the effects of structural defects and diffusion in many material areas, including thin-film manufacturing and facing metals. This volume on materials engineering provides a collection of abstracts for recent scholarly papers and articles on a wide variety of topics related to the effects of structural defects and diffusion in several material areas including thin film manufacturing and faced metals. The abstracts are divided into sections covering diffusion processes, linear defects, planar defects, and point defects, and each abstract includes publication information. The text includes both an author and key word index.
Whereas two-dimensional semiconductor process simulation has achieved a certain degree of maturity, three-dimensional process simulation is a newly emerging field in which most efforts are dedicated to necessary basic developments. Research in this area is promoted by the growing demand to obtain reliable information on device geometries and dopant distributions needed for three-dimensional device simulation, and challenged by the great algorithmic problems caused by moving interfaces and by the requirement to limit computation times and memory requirements. A workshop (Erlangen, September 5, 1995) provided a forum to discuss the industrial needs, technical problems, and solutions being developed in the field of three-dimensional semiconductor process simulation. Invited presentations from leading semiconductor companies and research Centers of Excellence from Japan, the USA, and Europe outlined novel numerical algorithms, physical models, and applications in this rapidly emerging field.
This book contains the first comprehensive review of intrinsic point defects, impurities and their complexes in silicon. Besides compiling the structures, energetic properties, identified electrical levels and spectroscopic signatures, and the diffusion behaviour from investigations, it gives a comprehensive introduction into the relevant fundamental concepts.
Mass Diffusion 2nd International Conference on Diffusion in Solids and Liquids, Mass Transfer - Heat Transfer - Microstructure & Properties, DSL-2006, 26-28 July 2006, University of Aveiro, Portugal
Photoacoustic and Photothermal Phenomena III comprises contributions explaining new topics, relevant theories, novel methods, and the developmentof instrumentation in this active research area - information that is otherwise not available in a single volume. Particular emphasis is placed on the variety of applications of photoacoustic and photothermal techniques in disciplines ranging from environmental, agricultural, medical, and biological sciences to spectroscopy, nondestructive evaluation, materials characterization, heat and mass transfer, kinetics (including ultrafast phenomena), and solid-state and surface physics. This volume provides an excellent overview of the spectrum of activities in the photoacoustic and photothermal field worldwide, and thus is suitable both for the specialist and for the newcomer to this multidisciplinary research area.