Capacitance Spectroscopy of Semiconductors
Capacitance Spectroscopy of Semiconductors

Author: Jian V. Li

Publisher: Pan Stanford

Published: 2018

Total Pages: 0

ISBN-13: 9781315150130

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Capacitance spectroscopy refers to techniques for characterizing the electrical properties of semiconductor materials, junctions, and interfaces, all from the dependence of device capacitance on frequency, time, temperature, and electric potential. This book includes 15 chapters written by world-recognized, leading experts in the field, academia, national institutions, and industry, divided into four sections: Physics, Instrumentation, Applications, and Emerging Techniques. The first section establishes the fundamental framework relating capacitance and its allied concepts of conductance, admittance, and impedance to the electrical and optical properties of semiconductors. The second section reviews the electronic principles of capacitance measurements used by commercial products, as well as custom apparatus. The third section details the implementation in various scientific fields and industries, such as photovoltaics and electronic and optoelectronic devices. The last section presents the latest advances in capacitance-based electrical characterization aimed at reaching nanometer-scale resolution.

Halide Perovskites
Halide Perovskites

Author: Tze-Chien Sum

Publisher: John Wiley & Sons

Published: 2019-03-25

Total Pages: 312

ISBN-13: 3527341110

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Real insight from leading experts in the field into the causes of the unique photovoltaic performance of perovskite solar cells, describing the fundamentals of perovskite materials and device architectures. The authors cover materials research and development, device fabrication and engineering methodologies, as well as current knowledge extending beyond perovskite photovoltaics, such as the novel spin physics and multiferroic properties of this family of materials. Aimed at a better and clearer understanding of the latest developments in the hybrid perovskite field, this is a must-have for material scientists, chemists, physicists and engineers entering or already working in this booming field.

The Electrical Characterization of Semiconductors
The Electrical Characterization of Semiconductors

Author: Peter Blood

Publisher:

Published: 1992

Total Pages: 774

ISBN-13:

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Describes the physical principles behind experimental techniques used for measuring the electrical properties of semiconductors. The principles involved are illustrated by reference to selected examples drawn from the world of semiconductor materials.

Trap Level Spectroscopy in Amorphous Semiconductors
Trap Level Spectroscopy in Amorphous Semiconductors

Author: Victor V. Mikla

Publisher: Elsevier

Published: 2010-06-11

Total Pages: 129

ISBN-13: 0123847168

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Although amorphous semiconductors have been studied for over four decades, many of their properties are not fully understood. This book discusses not only the most common spectroscopic techniques but also describes their advantages and disadvantages. - Provides information on the most used spectroscopic techniques - Discusses the advantages and disadvantages of each technique

Solar Cells
Solar Cells

Author: Leonid A. Kosyachenko

Publisher: BoD – Books on Demand

Published: 2015-10-22

Total Pages: 400

ISBN-13: 9535121847

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This book contains chapters in which the problems of modern photovoltaics are considered. The majority of the chapters provide an overview of the results of research and development of different types of solar cells. Such chapters are completed by a justification for a new solar cell structure and technology. Of course, highly effective solar energy conversion is impossible without an in-depth examination of the solar cell components as physical materials. The relations between structural, thermodynamic, and optical properties of the physical material without addressing the band theory of solids are of both theoretical and practical interest. Requirements formulated for the material are also to be used for maximally efficient conversion of solar radiation into useful work.

Semiconductor Physics
Semiconductor Physics

Author: Karlheinz Seeger

Publisher: Springer Science & Business Media

Published: 2013-06-29

Total Pages: 476

ISBN-13: 3662023512

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The first edition of "Semiconductor Physics" was published in 1973 by Springer-Verlag Wien-New York as a paperback in the Springer Study Edition. In 1977, a Russian translation by Professor Yu. K. Pozhela and coworkers at Vilnius/USSR was published by Izdatelstvo "MIR", Mo scow. Since then new ideas have been developed in the field of semi conductors such as electron hole droplets, dangling bond saturation in amorphous silicon by hydrogen, or the determination of the fine struc ture constant from surface quantization in inversion layers. New tech niques such as molecular beam epitaxy which has made the realization of the Esaki superlattice possible, deep level transient spectroscopy, and refined a. c. Hall techniques have evolved. Now that the Viennese edition is about to go out of print, Springer-Verlag, Berlin-Heidelberg-New York is giving me the opportunity to include these new subjects in a monograph to appear in the Solid-State Sciences series. Again it has been the intention to cover the field of semiconductor physics comprehensively, although some chapters such as diffusion of hot carriers and their galvanomagnetic phenomena, as well as super conducting degenerate semiconductors and the appendices, had to go for commercial reasons. The emphasis is more on physics than on device as pects.

Semiconductor Material and Device Characterization
Semiconductor Material and Device Characterization

Author: Dieter K. Schroder

Publisher: John Wiley & Sons

Published: 2015-06-29

Total Pages: 800

ISBN-13: 0471739065

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This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including: Updated and revised figures and examples reflecting the most current data and information 260 new references offering access to the latest research and discussions in specialized topics New problems and review questions at the end of each chapter to test readers' understanding of the material In addition, readers will find fully updated and revised sections in each chapter. Plus, two new chapters have been added: Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy. Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge. Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.

Characterization in Silicon Processing
Characterization in Silicon Processing

Author: Yale Strausser

Publisher: Elsevier

Published: 2013-10-22

Total Pages: 255

ISBN-13: 0080523420

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This volume is devoted to the consideration of the use use of surface, thin film and interface characterization tools in support of silicon-based semiconductor processing. The approach taken is to consider each of the types of films used in silicon devices individually in its own chapter and to discuss typical problems seen throughout that films' history, including characterization tools which are most effectively used to clarifying and solving those problems.

Polycrystalline Semiconductors
Polycrystalline Semiconductors

Author: Hans J. Möller

Publisher: Springer Science & Business Media

Published: 2012-12-06

Total Pages: 399

ISBN-13: 3642934137

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This book summarizes the most recent aspects of polycrystalline semiconductors as presented at the conference Polycrystalline Semiconductors - Grain Boundaries and Interfaces. It contains 12 review articles on selected topics written by experts in their fields and 41 complementary contributed papers. The structure, chemistry and physics of grain boundaries and other interfaces are experimentally and theoretically studied. Aspects of the technologically important polycrystalline silicon are discussed in detail. Also covered are other polycrystalline semiconductors, germanium and compound semiconductors, that are currently of interest in fundamental research and in the technology of solar cells and thin film devices. Anyone interested in polycrystalline semiconductors will be able to use this comprehensive collection to advantage. It also suggests directions for new research and development.