Physics and Chemistry of III-V Compound Semiconductor Interfaces

Physics and Chemistry of III-V Compound Semiconductor Interfaces

Author: Carl Wilmsen

Publisher: Springer Science & Business Media

Published: 2013-06-29

Total Pages: 472

ISBN-13: 1468448358

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The application of the 111-V compound semiconductors to device fabrica tion has grown considerably in the last few years. This process has been stimulated, in part, by the advancement in the understanding of the interface physics and chemistry of the III-V's. The literature on this subject is spread over the last 15 years and appears in many journals and conference proceedings. Understanding this literature requires consider able effort by the seasoned researcher, and even more for those starting out in the field or by engineers and scientists who wish to apply this knowledge to the fabrication of devices. The purpose of this book is to bring together much of the fundamental and practical knowledge on the physics and chemistry of the 111-V compounds with metals and dielectrics. The authors of this book have endeavored to provide concise overviews of these areas with many tahles ancI grarhs whic. h c. omr>are and summarize the literature. In this way, the book serves as both an insightful treatise on III-V interfaces and a handy reference to the literature. The selection of authors was mandated by the desire to include both fundamental and practical approaches, covering device and material aspects of the interfaces. All of the authors are recognized experts on III-V interfaces and each has worked for many years in his subject area. This experience is projected in the breadth of understanding in each chapter.


III–V Compound Semiconductors and Devices

III–V Compound Semiconductors and Devices

Author: Keh Yung Cheng

Publisher: Springer Nature

Published: 2020-11-08

Total Pages: 540

ISBN-13: 3030519031

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This textbook gives a complete and fundamental introduction to the properties of III-V compound semiconductor devices, highlighting the theoretical and practical aspects of their device physics. Beginning with an introduction to the basics of semiconductor physics, it presents an overview of the physics and preparation of compound semiconductor materials, as well as a detailed look at the electrical and optical properties of compound semiconductor heterostructures. The book concludes with chapters dedicated to a number of heterostructure electronic and photonic devices, including the high-electron-mobility transistor, the heterojunction bipolar transistor, lasers, unipolar photonic devices, and integrated optoelectronic devices. Featuring chapter-end problems, suggested references for further reading, as well as clear, didactic schematics accompanied by six information-rich appendices, this textbook is ideal for graduate students in the areas of semiconductor physics or electrical engineering. In addition, up-to-date results from published research make this textbook especially well-suited as a self-study and reference guide for engineers and researchers in related industries.


Physical Properties of III-V Semiconductor Compounds

Physical Properties of III-V Semiconductor Compounds

Author: Sadao Adachi

Publisher: John Wiley & Sons

Published: 1992-11-10

Total Pages: 342

ISBN-13: 9780471573296

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The objective of this book is two-fold: to examine key properties of III-V compounds and to present diverse material parameters and constants of these semiconductors for a variety of basic research and device applications. Emphasis is placed on material properties not only of Inp but also of InAs, GaAs and GaP binaries.


Fundamentals of III-V Semiconductor MOSFETs

Fundamentals of III-V Semiconductor MOSFETs

Author: Serge Oktyabrsky

Publisher: Springer Science & Business Media

Published: 2010-03-16

Total Pages: 451

ISBN-13: 1441915478

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Fundamentals of III-V Semiconductor MOSFETs presents the fundamentals and current status of research of compound semiconductor metal-oxide-semiconductor field-effect transistors (MOSFETs) that are envisioned as a future replacement of silicon in digital circuits. The material covered begins with a review of specific properties of III-V semiconductors and available technologies making them attractive to MOSFET technology, such as band-engineered heterostructures, effect of strain, nanoscale control during epitaxial growth. Due to the lack of thermodynamically stable native oxides on III-V's (such as SiO2 on Si), high-k oxides are the natural choice of dielectrics for III-V MOSFETs. The key challenge of the III-V MOSFET technology is a high-quality, thermodynamically stable gate dielectric that passivates the interface states, similar to SiO2 on Si. Several chapters give a detailed description of materials science and electronic behavior of various dielectrics and related interfaces, as well as physics of fabricated devices and MOSFET fabrication technologies. Topics also include recent progress and understanding of various materials systems; specific issues for electrical measurement of gate stacks and FETs with low and wide bandgap channels and high interface trap density; possible paths of integration of different semiconductor materials on Si platform.


Electronic, Transport, Optical and Other Properties

Electronic, Transport, Optical and Other Properties

Author: U. Rössler

Publisher: Springer

Published: 2002-08-21

Total Pages: 347

ISBN-13: 9783540428763

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Vols. III/17a-i and III/22a,b (supplement) on semiconductor physics and technology have been published earlier, the latter covering new data on the technologically important group IV elements, IV-IV and III-V compounds only. The wealth of further data from the last decade is now being critically evaluated by over 30 well-known experts in the field of semiconductors. To meet the demands of today's scientists and to offer a complete overview on semiconductor data all data available so far are published in the following way: a series of eight subvolumes cover only the supplementary data to vols. III/17 and 22. Enclosed to each subvolume, a CD-ROM contains a complete, revised and update edition of all relevant data. For each individual substance the information is presented in userfriendly documents, containing numerical data, figures and references. Easy access to the documents is provided via substance and property keywords, listing and full text retrieval.


Topics in Growth and Device Processing of III-V Semiconductors

Topics in Growth and Device Processing of III-V Semiconductors

Author: S. J. Pearton

Publisher: World Scientific

Published: 1996

Total Pages: 568

ISBN-13: 9789810218843

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This book describes advanced epitaxial growth and self-aligned processing techniques for the fabrication of III-V semiconductor devices such as heterojunction bipolar transistors and high electron mobility transistors. It is the first book to describe the use of carbon-doping and low damage dry etching techniques that have proved indispensable in making reliable, high performance devices. These devices are used in many applications such as cordless telephones and high speed lightwave communication systems.


CVD of Compound Semiconductors

CVD of Compound Semiconductors

Author: Anthony C. Jones

Publisher: John Wiley & Sons

Published: 2008-11-20

Total Pages: 352

ISBN-13: 3527614621

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Chemical growth methods of electronic materials are the keystone of microelectronic device processing. This book discusses the applications of metalorganic chemistry for the vapor phase deposition of compound semiconductors. Vapor phase methods used for semiconductor deposition and the materials properties that make the organometallic precursors useful in the electronics industry are discussed for a variety of materials. Topics included: * techniques for compound semiconductor growth * metalorganic precursors for III-V MOVPE * metalorganic precursors for II-VI MOVPE * single-source precursors * chemical beam epitaxy * atomic layer epitaxy Several useful appendixes and a critically selected, up-to-date list of references round off this practical handbook for materials scientists, solid-state and organometallic chemists, and engineers.


Doping in III-V Semiconductors

Doping in III-V Semiconductors

Author: E. Fred Schubert

Publisher: E. Fred Schubert

Published: 2015-08-18

Total Pages: 624

ISBN-13: 0986382639

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This is the first book to describe thoroughly the many facets of doping in compound semiconductors. Equal emphasis is given to the fundamental materials physics and to the technological aspects of doping. The author describes various doping techniques, including doping during epitaxial growth, doping by implantation, and doping by diffusion. The key characteristics of all dopants that have been employed in III-V semiconductors are discussed. In addition, general characteristics of dopants are analyzed, including the electrical activity, saturation, amphotericity, autocompensation, and maximum attainable dopant concentration. Redistribution effects are important in semiconductor microstructures. Linear and non-linear diffusion, different microscopic diffusion mechanisms, surface segregation, surface drift, surface migration, impurity-induced disordering, and the respective physical driving mechanisms are illustrated. Topics related to basic impurity theory include the hydrogenic model for shallow impurities, linear screening, density of states, classical and quantum statistics, the law of mass action, as well as many analytic approximations for the Fermi-Dirac integral for three-, two- and one dimensional systems. The timely topic of highly doped semiconductors, including band tails, impurity bands, bandgap renormalization, the Mott transition, and the Burstein-Moss shift, is discussed as well. Doping is essential in many semiconductor heterostructures including high-mobility selectively doped heterostructures, quantum well and quantum barrier structures, doping superlattice structures and d-doping structures. Technologically important deep levels are summarized, including Fe, Cr, and the DX-center, the EL2 defect, and rare-earth impurities. The properties of deep levels are presented phenomenologically, including emission, capture, Shockley-Read recombination, the Poole-Frenkel effect, lattice relaxation, and other effects. The final chapter is dedicated to the experimental characterization of impurities. This book will be of interest to graduate students, researchers and development engineers in the fields of electrical engineering, materials science, physics, and chemistry working on semiconductors. The book may also be used as a text for graduate courses in electrical engineering and materials science.


Compound Semiconductor Radiation Detectors

Compound Semiconductor Radiation Detectors

Author: Alan Owens

Publisher: Taylor & Francis

Published: 2016-04-19

Total Pages: 570

ISBN-13: 1439873135

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For many applications, compound semiconductors are now viable competitors to elemental semiconductors because of their wide range of physical properties. This book describes all aspects of radiation detection and measurement using compound semiconductors, including crystal growth, detector fabrication, contacting, and spectroscopic performance (with particular emphasis on the X- and gamma-ray regimes). A concentrated reference for researchers in various disciplines as well as graduate students in specialized courses, the text outlines the potential and limitations of semiconductor detectors.