Characterization, integration and reliability of HfO2 and LaLuO3 high-κ/metal gate stacks for CMOS applications
Author: Alexander Nichau
Publisher: Forschungszentrum Jülich
Published: 2014-04-03
Total Pages: 199
ISBN-13: 3893368981
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High-k Gate Dielectric Materials
Author: Niladri Pratap Maity
Publisher: CRC Press
Published: 2020-12-18
Total Pages: 248
ISBN-13: 1000527441
DOWNLOAD EBOOKThis volume explores and addresses the challenges of high-k gate dielectric materials, one of the major concerns in the evolving semiconductor industry and the International Technology Roadmap for Semiconductors (ITRS). The application of high-k gate dielectric materials is a promising strategy that allows further miniaturization of microelectronic components. This book presents a broad review of SiO2 materials, including a brief historical note of Moore’s law, followed by reliability issues of the SiO2 based MOS transistor. It goes on to discuss the transition of gate dielectrics with an EOT ~ 1 nm and a selection of high-k materials. A review of the various deposition techniques of different high-k films is also discussed. High-k dielectrics theories (quantum tunneling effects and interface engineering theory) and applications of different novel MOSFET structures, like tunneling FET, are also covered in this book. The volume also looks at the important issues in the future of CMOS technology and presents an analysis of interface charge densities with the high-k material tantalum pentoxide. The issue of CMOS VLSI technology with the high-k gate dielectric materials is covered as is the advanced MOSFET structure, with its working structure and modeling. This timely volume will prove to be a valuable resource on both the fundamentals and the successful integration of high-k dielectric materials in future IC technology.
High Permittivity Gate Dielectric Materials
Author: Samares Kar
Publisher: Springer Science & Business Media
Published: 2013-06-25
Total Pages: 515
ISBN-13: 3642365353
DOWNLOAD EBOOK"The book comprehensively covers all the current and the emerging areas of the physics and the technology of high permittivity gate dielectric materials, including, topics such as MOSFET basics and characteristics, hafnium-based gate dielectric materials, Hf-based gate dielectric processing, metal gate electrodes, flat-band and threshold voltage tuning, channel mobility, high-k gate stack degradation and reliability, lanthanide-based high-k gate stack materials, ternary hafnia and lanthania based high-k gate stack films, crystalline high-k oxides, high mobility substrates, and parameter extraction. Each chapter begins with the basics necessary for understanding the topic, followed by a comprehensive review of the literature, and ultimately graduating to the current status of the technology and our scientific understanding and the future prospects." .
Integration of Functional Oxides with Semiconductors
Author: Alexander A. Demkov
Publisher: Springer Science & Business Media
Published: 2014-02-20
Total Pages: 284
ISBN-13: 146149320X
DOWNLOAD EBOOKThis book describes the basic physical principles of the oxide/semiconductor epitaxy and offers a view of the current state of the field. It shows how this technology enables large-scale integration of oxide electronic and photonic devices and describes possible hybrid semiconductor/oxide systems. The book incorporates both theoretical and experimental advances to explore the heteroepitaxy of tuned functional oxides and semiconductors to identify material, device and characterization challenges and to present the incredible potential in the realization of multifunctional devices and monolithic integration of materials and devices. Intended for a multidisciplined audience, Integration of Functional Oxides with Semiconductors describes processing techniques that enable atomic-level control of stoichiometry and structure and reviews characterization techniques for films, interfaces and device performance parameters. Fundamental challenges involved in joining covalent and ionic systems, chemical interactions at interfaces, multi-element materials that are sensitive to atomic-level compositional and structural changes are discussed in the context of the latest literature. Magnetic, ferroelectric and piezoelectric materials and the coupling between them will also be discussed. GaN, SiC, Si, GaAs and Ge semiconductors are covered within the context of optimizing next-generation device performance for monolithic device processing.
Internal Photoemission Spectroscopy
Author: Valeri V. Afanas'ev
Publisher: Elsevier
Published: 2014-02-22
Total Pages: 404
ISBN-13: 0080999301
DOWNLOAD EBOOKThe second edition of Internal Photoemission Spectroscopy thoroughly updates this vital, practical guide to internal photoemission (IPE) phenomena and measurements. The book's discussion of fundamental physical and technical aspects of IPE spectroscopic applications is supplemented by an extended overview of recent experimental results in swiftly advancing research fields. These include the development of insulating materials for advanced SiMOS technology, metal gate materials, development of heterostructures based on high-mobility semiconductors, and more. Recent results concerning the band structure of important interfaces in novel materials are covered as well. Internal photoemission involves the physics of charge carrier photoemission from one solid to another, and different spectroscopic applications of this phenomenon to solid state heterojunctions. This technique complements conventional external photoemission spectroscopy by analyzing interfaces separated from the sample surface by a layer of a different solid or liquid. Internal photoemission provides the most straightforward, reliable information regarding the energy spectrum of electron states at interfaces. At the same time, the method enables the analysis of heterostructures relevant to modern micro- and nano-electronic devices as well as new materials involved in their design and fabrication. - First complete model description of the internal photoemission phenomena - Overview of the most reliable energy barrier determination procedures and trap characterization methods - Overview of the most recent results on band structure of high-permittivity insulating materials and their interfaces with semiconductors and metals
Resistive Random Access Memory (RRAM)
Author: Shimeng Yu
Publisher: Springer Nature
Published: 2022-06-01
Total Pages: 71
ISBN-13: 3031020308
DOWNLOAD EBOOKRRAM technology has made significant progress in the past decade as a competitive candidate for the next generation non-volatile memory (NVM). This lecture is a comprehensive tutorial of metal oxide-based RRAM technology from device fabrication to array architecture design. State-of-the-art RRAM device performances, characterization, and modeling techniques are summarized, and the design considerations of the RRAM integration to large-scale array with peripheral circuits are discussed. Chapter 2 introduces the RRAM device fabrication techniques and methods to eliminate the forming process, and will show its scalability down to sub-10 nm regime. Then the device performances such as programming speed, variability control, and multi-level operation are presented, and finally the reliability issues such as cycling endurance and data retention are discussed. Chapter 3 discusses the RRAM physical mechanism, and the materials characterization techniques to observe the conductive filaments and the electrical characterization techniques to study the electronic conduction processes. It also presents the numerical device modeling techniques for simulating the evolution of the conductive filaments as well as the compact device modeling techniques for circuit-level design. Chapter 4 discusses the two common RRAM array architectures for large-scale integration: one-transistor-one-resistor (1T1R) and cross-point architecture with selector. The write/read schemes are presented and the peripheral circuitry design considerations are discussed. Finally, a 3D integration approach is introduced for building ultra-high density RRAM array. Chapter 5 is a brief summary and will give an outlook for RRAM’s potential novel applications beyond the NVM applications.
Magnetoelectric Composites
Author: Mirza I. Bichurin
Publisher: CRC Press
Published: 2019-02-22
Total Pages: 280
ISBN-13: 0429949618
DOWNLOAD EBOOKThis book is dedicated to modeling and application of magnetoelectric (ME) effects in layered and bulk composites based on magnetostrictive and piezoelectric materials. Currently, numerous theoretical and experimental studies on ME composites are available but few on the development and research of instruments based on them. So far, only investigation of ME magnetic field sensors has been cited in the existing literature. However, these studies have finally resulted in the creation of low-frequency ME magnetic field sensors with parameters substantially exceeding the characteristics of Hall sensors. The book presents the authors’ many years of experience gained in ME composites and through creation of device models based on their studies. It describes low-frequency ME devices, such as current and position sensors and energy harvesters, and microwave ME devices, such as antennas, attenuators, filters, gyrators, and phase shifters.
Oxide Electronics
Author: Asim K. Ray
Publisher: John Wiley & Sons
Published: 2021-04-12
Total Pages: 628
ISBN-13: 1119529476
DOWNLOAD EBOOKOxide Electronics Multiple disciplines converge in this insightful exploration of complex metal oxides and their functions and properties Oxide Electronics delivers a broad and comprehensive exploration of complex metal oxides designed to meet the multidisciplinary needs of electrical and electronic engineers, physicists, and material scientists. The distinguished author eschews complex mathematics whenever possible and focuses on the physical and functional properties of metal oxides in each chapter. Each of the sixteen chapters featured within the book begins with an abstract and an introduction to the topic, clear explanations are presented with graphical illustrations and relevant equations throughout the book. Numerous supporting references are included, and each chapter is self-contained, making them perfect for use both as a reference and as study material. Readers will learn how and why the field of oxide electronics is a key area of research and exploitation in materials science, electrical engineering, and semiconductor physics. The book encompasses every application area where the functional and electronic properties of various genres of oxides are exploited. Readers will also learn from topics like: Thorough discussions of High-k gate oxide for silicon heterostructure MOSFET devices and semiconductor-dielectric interfaces An exploration of printable high-mobility transparent amorphous oxide semiconductors Treatments of graphene oxide electronics, magnetic oxides, ferroelectric oxides, and materials for spin electronics Examinations of the calcium aluminate binary compound, perovoksites for photovoltaics, and oxide 2Degs Analyses of various applications for oxide electronics, including data storage, microprocessors, biomedical devices, LCDs, photovoltaic cells, TFTs, and sensors Suitable for researchers in semiconductor technology or working in materials science, electrical engineering, and physics, Oxide Electronics will also earn a place in the libraries of private industry researchers like device engineers working on electronic applications of oxide electronics. Engineers working on photovoltaics, sensors, or consumer electronics will also benefit from this book.
Emerging Non-Volatile Memories
Author: Seungbum Hong
Publisher: Springer
Published: 2014-11-18
Total Pages: 280
ISBN-13: 1489975373
DOWNLOAD EBOOKThis book is an introduction to the fundamentals of emerging non-volatile memories and provides an overview of future trends in the field. Readers will find coverage of seven important memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), Multiferroic RAM (MFRAM), Phase-Change Memories (PCM), Oxide-based Resistive RAM (RRAM), Probe Storage, and Polymer Memories. Chapters are structured to reflect diffusions and clashes between different topics. Emerging Non-Volatile Memories is an ideal book for graduate students, faculty, and professionals working in the area of non-volatile memory. This book also: Covers key memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), and Multiferroic RAM (MFRAM), among others. Provides an overview of non-volatile memory fundamentals. Broadens readers’ understanding of future trends in non-volatile memories.
Functional Metal Oxide Nanostructures
Author: Junqiao Wu
Publisher: Springer Science & Business Media
Published: 2011-09-22
Total Pages: 371
ISBN-13: 1441999310
DOWNLOAD EBOOKMetal oxides and particularly their nanostructures have emerged as animportant class of materials with a rich spectrum of properties and greatpotential for device applications. In this book, contributions from leadingexperts emphasize basic physical properties, synthesis and processing, and thelatest applications in such areas as energy, catalysis and data storage. Functional Metal Oxide Nanostructuresis an essential reference for any materials scientist or engineer with aninterest in metal oxides, and particularly in recent progress in defectphysics, strain effects, solution-based synthesis, ionic conduction, and theirapplications.
