2012 International Conference on Indium Phosphide and Related Materials (IPRM 2012)
Author: IEEE Staff
Publisher:
Published: 2012
Total Pages: 0
ISBN-13: 9781467317252
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Optical Fiber Telecommunications Volume VIA
Author: Ivan Kaminow
Publisher: Academic Press
Published: 2013-05-03
Total Pages: 795
ISBN-13: 0123972353
DOWNLOAD EBOOKOptical Fiber Telecommunications VI (A&B) is the sixth in a series that has chronicled the progress in the R&D of lightwave communications since the early 1970s. Written by active authorities from academia and industry, this edition brings a fresh look to many essential topics, including devices, subsystems, systems and networks. A central theme is the enabling of high-bandwidth communications in a cost-effective manner for the development of customer applications. These volumes are an ideal reference for R&D engineers and managers, optical systems implementers, university researchers and students, network operators, and investors. Volume A is devoted to components and subsystems, including photonic integrated circuits, multicore and few-mode fibers, photonic crystals, silicon photonics, signal processing, and optical interconnections.
Compound Semiconductor Materials and Devices
Author: Zhaojun Liu
Publisher: Springer Nature
Published: 2022-06-01
Total Pages: 65
ISBN-13: 3031020286
DOWNLOAD EBOOKEver since its invention in the 1980s, the compound semiconductor heterojunction-based high electron mobility transistor (HEMT) has been widely used in radio frequency (RF) applications. This book provides readers with broad coverage on techniques and new trends of HEMT, employing leading compound semiconductors, III-N and III-V materials. The content includes an overview of GaN HEMT device-scaling technologies and experimental research breakthroughs in fabricating various GaN MOSHEMT transistors. Readers are offered an inspiring example of monolithic integration of HEMT with LEDs, too. The authors compile the most relevant aspects of III-V HEMT, including the current status of state-of-art HEMTs, their possibility of replacing the Si CMOS transistor channel, and growth opportunities of III-V materials on an Si substrate. With detailed exploration and explanations, the book is a helpful source suitable for anyone learning about and working on compound semiconductor devices.
Neuromorphic Photonics
Author: Paul R. Prucnal
Publisher: CRC Press
Published: 2017-05-08
Total Pages: 412
ISBN-13: 1498725244
DOWNLOAD EBOOKThis book sets out to build bridges between the domains of photonic device physics and neural networks, providing a comprehensive overview of the emerging field of "neuromorphic photonics." It includes a thorough discussion of evolution of neuromorphic photonics from the advent of fiber-optic neurons to today’s state-of-the-art integrated laser neurons, which are a current focus of international research. Neuromorphic Photonics explores candidate interconnection architectures and devices for integrated neuromorphic networks, along with key functionality such as learning. It is written at a level accessible to graduate students, while also intending to serve as a comprehensive reference for experts in the field.
Advanced Indium Arsenide-Based HEMT Architectures for Terahertz Applications
Author: N. Mohankumar
Publisher: CRC Press
Published: 2021-09-28
Total Pages: 114
ISBN-13: 1000454568
DOWNLOAD EBOOKHigh electron mobility transistor (HEMT) has better performance potential than the conventional MOSFETs. Further, InAs is a perfect candidate for the HEMT device architecture owing to its peak electron mobility. Advanced Indium Arsenide-based HEMT Architectures for Terahertz Applications characterizes the HEMT based on InAs III-V material to achieve outstanding current and frequency performance. This book explains different types of device architectures available to enhance performance including InAs-based single gate (SG) HEMT and double gate (DG) HEMT. The noise analysis of InAs-based SG and DG-HEMT is also discussed. The main goal of this book is to characterize the InAs device to achieve terahertz frequency regime with proper device parameters. Features: Explains the influence of InAs material in the performance of HEMTs and MOS-HEMTs. Covers novel indium arsenide architectures for achieving terahertz frequencies Discusses impact of device parameters on frequency response Illustrates noise characterization of optimized indium arsenide HEMTs Introduces terahertz electronics including sources for terahertz applications. This book is of special interest to researchers and graduate students in Electronics Engineering, High Electron Mobility Transistors, Semi-conductors, Communications, and Nanodevices.
Handbook of Crystal Growth
Author: Tom Kuech
Publisher: Elsevier
Published: 2014-11-02
Total Pages: 1384
ISBN-13: 0444633057
DOWNLOAD EBOOKVolume IIIA Basic TechniquesHandbook of Crystal Growth, Second Edition Volume IIIA (Basic Techniques), edited by chemical and biological engineering expert Thomas F. Kuech, presents the underpinning science and technology associated with epitaxial growth as well as highlighting many of the chief and burgeoning areas for epitaxial growth. Volume IIIA focuses on major growth techniques which are used both in the scientific investigation of crystal growth processes and commercial development of advanced epitaxial structures. Techniques based on vacuum deposition, vapor phase epitaxy, and liquid and solid phase epitaxy are presented along with new techniques for the development of three-dimensional nano-and micro-structures.Volume IIIB Materials, Processes, and TechnologyHandbook of Crystal Growth, Second Edition Volume IIIB (Materials, Processes, and Technology), edited by chemical and biological engineering expert Thomas F. Kuech, describes both specific techniques for epitaxial growth as well as an array of materials-specific growth processes. The volume begins by presenting variations on epitaxial growth process where the kinetic processes are used to develop new types of materials at low temperatures. Optical and physical characterizations of epitaxial films are discussed for both in situ and exit to characterization of epitaxial materials. The remainder of the volume presents both the epitaxial growth processes associated with key technology materials as well as unique structures such as monolayer and two dimensional materials.Volume IIIA Basic Techniques - Provides an introduction to the chief epitaxial growth processes and the underpinning scientific concepts used to understand and develop new processes. - Presents new techniques and technologies for the development of three-dimensional structures such as quantum dots, nano-wires, rods and patterned growth - Introduces and utilizes basic concepts of thermodynamics, transport, and a wide cross-section of kinetic processes which form the atomic level text of growth process Volume IIIB Materials, Processes, and Technology - Describes atomic level epitaxial deposition and other low temperature growth techniques - Presents both the development of thermal and lattice mismatched streams as the techniques used to characterize the structural properties of these materials - Presents in-depth discussion of the epitaxial growth techniques associated with silicone silicone-based materials, compound semiconductors, semiconducting nitrides, and refractory materials
Semiconductor TeraHertz Technology
Author: Guillermo Carpintero
Publisher: John Wiley & Sons
Published: 2015-07-14
Total Pages: 426
ISBN-13: 1118920392
DOWNLOAD EBOOKKey advances in Semiconductor Terahertz (THz) Technology now promises important new applications enabling scientists and engineers to overcome the challenges of accessing the so-called "terahertz gap". This pioneering reference explains the fundamental methods and surveys innovative techniques in the generation, detection and processing of THz waves with solid-state devices, as well as illustrating their potential applications in security and telecommunications, among other fields. With contributions from leading experts, Semiconductor Terahertz Technology: Devices and Systems at Room Temperature Operation comprehensively and systematically covers semiconductor-based room temperature operating sources such as photomixers, THz antennas, radiation concepts and THz propagation as well as room-temperature operating THz detectors. The second part of the book focuses on applications such as the latest photonic and electronic THz systems as well as emerging THz technologies including: whispering gallery resonators, liquid crystals, metamaterials and graphene-based devices. This book will provide support for practicing researchers and professionals and will be an indispensable reference to graduate students in the field of THz technology. Key features: Includes crucial theoretical background sections to photomixers, photoconductive switches and electronic THz generation & detection. Provides an extensive overview of semiconductor-based THz sources and applications. Discusses vital technologies for affordable THz applications. Supports teaching and studying increasingly popular courses on semiconductor THz technology.
Applications in Electronics Pervading Industry, Environment and Society
Author: Alessandro De Gloria
Publisher: Springer
Published: 2018-07-12
Total Pages: 145
ISBN-13: 3319930826
DOWNLOAD EBOOKThis book provides a thorough overview of cutting-edge research on electronics applications relevant to industry, the environment, and society at large. It covers a broad spectrum of application domains, from automotive to space and from health to security, while devoting special attention to the use of embedded devices and sensors for imaging, communication and control. The book is based on the 2017 ApplePies Conference, held in Rome, Italy in September 2017, which brought together researchers and stakeholders to consider the most significant current trends in the field of applied electronics and to debate visions for the future. Areas addressed by the conference included information communication technology; biotechnology and biomedical imaging; space; secure, clean and efficient energy; the environment; and smart, green and integrated transport. As electronics technology continues to develop apace, constantly meeting previously unthinkable targets, further attention needs to be directed toward the electronics applications and the development of systems that facilitate human activities. This book, written by industrial and academic professionals, represents a valuable contribution in this endeavor.
Fundamentals of Tunnel Field-Effect Transistors
Author: Sneh Saurabh
Publisher: CRC Press
Published: 2016-10-26
Total Pages: 216
ISBN-13: 1315350262
DOWNLOAD EBOOKDuring the last decade, there has been a great deal of interest in TFETs. To the best authors’ knowledge, no book on TFETs currently exists. The proposed book provides readers with fundamental understanding of the TFETs. It explains the interesting characteristics of the TFETs, pointing to their strengths and weaknesses, and describes the novel techniques that can be employed to overcome these weaknesses and improve their characteristics. Different tradeoffs that can be made in designing TFETs have also been highlighted. Further, the book provides simulation example files of TFETs that could be run using a commercial device simulator.
Handbook for III-V High Electron Mobility Transistor Technologies
Author: D. Nirmal
Publisher: CRC Press
Published: 2019-05-14
Total Pages: 443
ISBN-13: 0429862539
DOWNLOAD EBOOKThis book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT). Key Features Combines III-As/P/N HEMTs with reliability and current status in single volume Includes AC/DC modelling and (sub)millimeter wave devices with reliability analysis Covers all theoretical and experimental aspects of HEMTs Discusses AlGaN/GaN transistors Presents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots
