Ion Beam and Plasma Technology Development for Surface Modification at Los Alamos National Laboratory
Ion Beam and Plasma Technology Development for Surface Modification at Los Alamos National Laboratory

Author:

Publisher:

Published: 2006

Total Pages:

ISBN-13:

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We are developing two high-throughput technologies for materials modification. The first is a repetitive intense ion beam source for materials modification through rapid surface melt and resolidification (up to 10[sup 10] deg/sec cooling rates) and for ablative deposition of coatings. The short range of the ions (typically 0.1 to 5 micrometers) allows vaporization or melting at moderate beam energy density (typically 1-50 J/cm[sup 2]). A new repetitive intense ion beam accelerator called CHAMP is under development at Los Alamos. The design beam parameters are: E=200 keV, I=15 kA, [tau]=1 [micro]s, and 1 Hz. This accelerator will enable applications such as film deposition, alloying and mixing, cleaning and polishing, corrosion and wear resistance, polymer surface treatments, and nanophase powder synthesis. The second technology is plasma source ion implantation (PSII) using plasmas generated from both gas phase (using radio frequency excitation) and solid phase (using a cathodic arc) sources. We have used PSII to directly implant ions for surface modification or as method for generating graded interfaces to enhance the adhesion of surface coatings. Surfaces with areas of up to 16 m[sup 2] and weighing more than a thousand kilograms have been treated in the Los Alamos PSII chamber. In addition, PSII in combination with cathodic source deposition has been used to form highly adherent, thick Er[sub 2]O[sub 3] coatings on steel for reactive metal containment in casting. These coatings resist delamination under extreme mechanical and thermal stress.

Ion Implantation Technology - 94
Ion Implantation Technology - 94

Author: S. Coffa

Publisher: Newnes

Published: 1995-05-16

Total Pages: 1031

ISBN-13: 044459972X

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The aim of these proceedings is to present and stimulate discussion on the many subjects related to ion implantation among a broad mix of specialists from areas as diverse as materials science, device production and advanced ion implanters. The contents open with a paper on the future developments of the microelectronics industry in Europe within the framework of the global competition. The subsequent invited and oral presentations cover in detail the following areas: trends in processing and devices, ion-solid interaction, materials science issues, advanced implanter systms, process control and yield, future trends and applications.

Plasma Source Ion Implantation Research and Applications at Los Alamos National Laboratory
Plasma Source Ion Implantation Research and Applications at Los Alamos National Laboratory

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Publisher:

Published: 1996

Total Pages: 5

ISBN-13:

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Plasma Source Ion Implantation research at Los Alamos Laboratory includes direct investigation of the plasma and materials science involved in target surface modification, numerical simulations of the implantation process, and supporting hardware engineering. Target materials of Al, Cr, Cu-Zn, Mg, Ni, Si, Ti, W, and various Fe alloys have been processed using plasmas produced from Ar, NH3, N2, CH4, and C2H2 gases. Individual targets with surface areas as large as (approximately)4 m2, or weighing up to 1200 kg, have been treated in the large LANL facility. In collaboration with General Motors and the University of Wisconsin, a process has been developed for application of hard, low friction, diamond-like-carbon layers on assemblies of automotive pistons. Numerical simulations have been performed using a 21/2-D particle- in-cell code, which yields time-dependent implantation energy, dose, and angle of arrival for ions at the target surface for realistic geometries. Plasma source development activities include the investigation of pulsed, inductively coupled sources capable of generating highly dissociated N with ion densities n{sub i} (approximately) 1011/cm3, at (approximately)100 W average input power. Cathodic arc sources have also been used to produce filtered metallic and C plasmas for implantation and deposition either in vacuum, or in conjunction with a background gas for production of highly adherent ceramic coatings.