The objectives of the program are to: (1) investigate high-energy ion implantation of donors into GaAs for multigigabit-rate GaAs integrated-circuit (IC) development and (2) to study the use of high-power lasers and other techniques for removing lattice damage and activating implanted species. GaAs ICs require the selective definition of n-layers in semi-insulating (SI) GaAs for the fabrication of active devices such as FETs, TELDs, and Schottky-barrier diodes. In order to fabricate such device elements, a capability for realizing n-layers with doping ranging from 10 to the 16th power to 5 x 10 to the 18th power/cc and thicknesses from 1 to o.15 micrometer is required. Until the inception of this program, the major effort on ion implantation into GaAs has been at energies less than 500 keV, which limits the implant depth to typically less than several hundred nanometers. During this program, high-energy implantation of Si into SI GaAs at energies of 30 to 1200 keV has been investigated. Projected ranges and straggles have been measured by secondary ion-mass spectrometry (SIMS). Based on these measurements, we have produced up to approx. 1-micrometer-thick n-type GaAs layers at doping levels of approx. 5 x 10 to the 16th power to 1 x 10 to the 18th power/cc by multiple-energy Si implantation.
The objectives of this program are: (1) study of high-energy ion implantation of donors into GaAs for multigigabit-rate GaAs integrated-circuit development; and (2) annealing of implanted GaAs using high-power lasers to remove lattice damage and activate implanted donors. We have: (1) investigated implantation of Si(28+) into semi-insulating GaAs with implant energies ranging from 40 keV to 1.2 MeV; (2) developed a capless thermal annealing process under arsenic overpressure which results in high activation efficiency with excellent surface morphology; (3) investigated laser-annealing of Si-implanted GaAs using a high-power Nd:Glass laser and a ruby laser. Electrical activation of high-dose, low-energy (
Lists citations with abstracts for aerospace related reports obtained from world wide sources and announces documents that have recently been entered into the NASA Scientific and Technical Information Database.
This report covers the sixth quarter, Phase II of a program on ion implanted planar GaAs integrated circuit technology. The bulk of the work on this program is carried out at the Rockwell International Electronics Research Center (ERC). Significant assistance is provided by three subcontractors; Crystal Specialties Inc. in crystal growth, California Institute of Technology in ion implantation and related materials technologies, and Cornell University in device modeling. With MSI circuit complexity well demonstrated, the circuit developement work in this quarter was focused on the testing of MSI/LSI circuits (250-500 gates), and on the design of an LSI circuit (1000 gates). The preliminary data from the MSI/LSI circuits (from mask set AR4) are promising. Although the 5X5 but parallel multiplier (260 gates) did not operate completely and did not function at its predicted speed, the test data indicate that it can meet the design expectations when a mask error (a missing connection on 16 gates) is corrected. The 2 X 32 stage shift register (550 gates) has functioned up to 33 stages involving approximately 300 gates. Further testing is scheduled. An 8 X 8 bit parallel multiplier (1008 gates) has been designed, layed out, and the mask set containing this circuit is being fabricated. Keywords: Semi insulating, Ion implantation, Integrated circuits, High speed logic, Gallium arsenides.
During the past ten years the use of ion implantation for doping semiconductors has become an active area of research and new device development. This doping technique has recently reached a level of maturity such that it is an integral step in the manu facturing of discrete semiconductor devices and integrated circuits. Ion implantation has significant advantages over diffusion such as: precision, purity, versatility, and automation; all of which are important for VLSI purposes. Ion implantation has also found new applications in magnetic bubble domain materials, superconductors, and materials synthesis. This book is a comprehensive bibliography of 2467 references of the world's literature on ion implantation as applied to micro electronics. This compilation will easily enable researchers to compare their work with that of others. For easy access to the needed references, the contents are divided into fifty-two subject headings. The main categories are: bibliographies, books and symposia, review articles, theory, materials, device applications, and equipment. An author index and a subject index are also given to provide easy access to the references. The literature from January 1976 to December 1980 is covered. The literature prior to 1976 is the subject, in part, of a previous book by the author (1). The main sources searched were: Physics Abstracts (PA) , Electrical and Electronics Abstracts (EEA) , Chemical Abstracts (CA) , Nuclear Science Abstracts (NSA) , and Engineering Index. The volumes and numbers of the abstracts are given to pro vide access to the abstracts.
The performance of high-speed semiconductor devices—the genius driving digital computers, advanced electronic systems for digital signal processing, telecommunication systems, and optoelectronics—is inextricably linked to the unique physical and electrical properties of gallium arsenide. Once viewed as a novel alternative to silicon, gallium arsenide has swiftly moved into the forefront of the leading high-tech industries as an irreplaceable material in component fabrication. GaAs High-Speed Devices provides a comprehensive, state-of-the-science look at the phenomenally expansive range of engineering devices gallium arsenide has made possible—as well as the fabrication methods, operating principles, device models, novel device designs, and the material properties and physics of GaAs that are so keenly integral to their success. In a clear five-part format, the book systematically examines each of these aspects of GaAs device technology, forming the first authoritative study to consider so many important aspects at once and in such detail. Beginning with chapter 2 of part one, the book discusses such basic subjects as gallium arsenide materials and crystal properties, electron energy band structures, hole and electron transport, crystal growth of GaAs from the melt and defect density analysis. Part two describes the fabrication process of gallium arsenide devices and integrated circuits, shedding light, in chapter 3, on epitaxial growth processes, molecular beam epitaxy, and metal organic chemical vapor deposition techniques. Chapter 4 provides an introduction to wafer cleaning techniques and environment control, wet etching methods and chemicals, and dry etching systems, including reactive ion etching, focused ion beam, and laser assisted methods. Chapter 5 provides a clear overview of photolithography and nonoptical lithography techniques that include electron beam, x-ray, and ion beam lithography systems. The advances in fabrication techniques described in previous chapters necessitate an examination of low-dimension device physics, which is carried on in detail in chapter 6 of part three. Part four includes a discussion of innovative device design and operating principles which deepens and elaborates the ideas introduced in chapter 1. Key areas such as metal-semiconductor contact systems, Schottky Barrier and ohmic contact formation and reliability studies are examined in chapter 7. A detailed discussion of metal semiconductor field-effect transistors, the fabrication technology, and models and parameter extraction for device analyses occurs in chapter 8. The fifth part of the book progresses to an up-to-date discussion of heterostructure field-effect (HEMT in chapter 9), potential-effect (HBT in chapter 10), and quantum-effect devices (chapters 11 and 12), all of which are certain to have a major impact on high-speed integrated circuits and optoelectronic integrated circuit (OEIC) applications. Every facet of GaAs device technology is placed firmly in a historical context, allowing readers to see instantly the significant developmental changes that have shaped it. Featuring a look at devices still under development and device structures not yet found in the literature, GaAs High-Speed Devices also provides a valuable glimpse into the newest innovations at the center of the latest GaAs technology. An essential text for electrical engineers, materials scientists, physicists, and students, GaAs High-Speed Devices offers the first comprehensive and up-to-date look at these formidable 21st century tools. The unique physical and electrical properties of gallium arsenide has revolutionized the hardware essential to digital computers, advanced electronic systems for digital signal processing, telecommunication systems, and optoelectronics. GaAs High-Speed Devices provides the first fully comprehensive look at the enormous range of engineering devices gallium arsenide has made possible as well as the backbone of the technology—ication methods, operating principles, and the materials properties and physics of GaAs—device models and novel device designs. Featuring a clear, six-part format, the book covers: GaAs materials and crystal properties Fabrication processes of GaAs devices and integrated circuits Electron beam, x-ray, and ion beam lithography systems Metal-semiconductor contact systems Heterostructure field-effect, potential-effect, and quantum-effect devices GaAs Microwave Monolithic Integrated Circuits and Digital Integrated Circuits In addition, this comprehensive volume places every facet of the technology in an historical context and gives readers an unusual glimpse at devices still under development and device structures not yet found in the literature.
