Fundamentals of Beam-Solid Interactions and Transient Thermal Processing Symposium Held in Boston, Massachusetts on November 30-December 30 1987. Volume 100. Materials Research Society Symposium Proceedings
Fundamentals of Beam-Solid Interactions and Transient Thermal Processing Symposium Held in Boston, Massachusetts on November 30-December 30 1987. Volume 100. Materials Research Society Symposium Proceedings

Author: Michael J. Aziz

Publisher:

Published: 1988

Total Pages: 764

ISBN-13:

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The material covered in this symposium focused on two distinct areas. The first was phase transformations induced by ion or electron bombardment, including amorphization and interface motion. The second was the behavior of solids during various forms of annealing and quenching ranging in duration from femtoseconds to hours, such as rapid solidification following pulsed laser melting and rapid thermal annealing. The overlap between these two areas consisted of topics such as motion of the crystal/amorphous interface during ion bombardment at elevated temperatures. The symposium revealed how these fields have matured over the last decade, and highlighted many new and several older, yet-unanswered questions that might be addressed in future research. Keywords: Phase transformations; Ion bombardment; Electron bombardment; Annealing; Quenching; Solidification; Interfaces.

Materials Research Society Symposia Proceedings. Volume 23. Energy Beam-Solid Interactions and Transient Thermal Processing Held at Boston, Massachusetts on 14-17 November 1983
Materials Research Society Symposia Proceedings. Volume 23. Energy Beam-Solid Interactions and Transient Thermal Processing Held at Boston, Massachusetts on 14-17 November 1983

Author: J. C. C. Fan

Publisher:

Published: 1984

Total Pages: 802

ISBN-13:

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Major Topics include: SOI(Silicon On Insulators); Technologies for Integrated Circuits; Fundamentals of Energy Beam Interactions with Solids; Applications of Energy Beams in Material and Device Processing; Device Applications of Rapid Thermal Processing; Fundamental Mechanisms; Transient Thermal Processing of Silicon; Defect Mechanisms and Crystallization of Semiconductor on Insulators; SOI Materials and Devices; Compound Semiconductors; and Metallic Alloys.