Materials Research Society Symposia Proceedings. Volume 35. Energy Beam-Solid Interactions and Transient Thermal Processing Held on November 26-30, 1984 at Boston, Massachusetts
Materials Research Society Symposia Proceedings. Volume 35. Energy Beam-Solid Interactions and Transient Thermal Processing Held on November 26-30, 1984 at Boston, Massachusetts

Author: D. K. Biegelsen

Publisher:

Published: 1985

Total Pages: 761

ISBN-13:

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The symposium was devoted to those topical areas evolving from the subject of laser annealing. The material covered in this symposium has three distinct foci. First is the field of sub-microsecond (to femptosecond) interactions of energy beams with solids and the resultant material changes on similar time scales. Issues of energy transfer, internal equilibration, solid phase regrowth of amorphized layers, ultrarapid quenching of amorphous semiconductors dominate this topic. A second focus is the maturing area of rapid thermal processing (.001 to 100 seconds). The materials science issues of defect and impurity kinetics, and silicide and alloy development underlie a strong technological thrust. The third focus is the area of semiconductor growth over insulators by lateral epitaxy. Studies concerning low angle grain boundaries, the characteristic microscopic defects in zone melting recrystallization of thin films, and increasing emphasis on solid phase lateral epitaxy are showing strong progress towards technologically suitable preparation techniques.

Oriented Crystallization on Amorphous Substrates
Oriented Crystallization on Amorphous Substrates

Author: E.I. Givargizov

Publisher: Springer Science & Business Media

Published: 2013-11-21

Total Pages: 377

ISBN-13: 1489925600

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Present-day scienceand technology have become increasingly based on studies and applications of thin films. This is especiallytrue of solid-state physics, semiconduc tor electronics, integrated optics, computer science, and the like. In these fields, it is necessary to use filmswith an ordered structure, especiallysingle-crystallinefilms, because physical phenomena and effects in such films are most reproducible. Also, active parts of semiconductor and other devices and circuits are created, as a rule, in single-crystal bodies. To date, single-crystallinefilms have been mainly epitaxial (or heteroepitaxial); i.e., they have been grown on a single-crystalline substrate, and principal trends, e.g., in the evolution of integrated circuits (lCs), have been based on continuing reduction in feature size and increase in the number of components per chip. However, as the size decreases into the submicrometer range, technological and physical limitations in integrated electronics become more and more severe. It is generally believed that a feature size of about 0.1um will have a crucial character. In other words, the present two-dimensional ICs are anticipated to reach their limit of minimization in the near future, and it is realized that further increase of packing density and/or functions might depend on three-dimensional integration. To solve the problem, techniques for preparation of single-crystalline films on arbitrary (including amorphous) substrates are essential.